High-Speed Analog-to-Digital Converters for Broadband Applications

Flash Analog-to-Digital Converters (ADCs), targeting optical communication standards, have been reported in SiGe BiCMOS technology. CMOS implementation of such designs faces two challenges. The first is to achieve a high sampling speed, given the lower gain-bandwidth (lower ft) of CMOS technology. The second challenge is to handle the wide bandwidth of the input signal with a certain accuracy. Although the first problem can be relaxed by using the time-interleaved architecture, the second problem remains as a main obstacle to CMOS implementation. As a result, the feasibility of the CMOS implementation of ADCs for such applications, or other wide band applications, depends primarily on achieving a very small input capacitance (large bandwidth) at the desired accuracy. In the flash architecture, the input capacitance is traded off for the achievable accuracy. This tradeoff becomes tighter with technology scaling. An effective way to ease this tradeoff is to use resistive offset averaging. This permits the use of smaller area transistors, leading to a reduction in the ADC input capacitance. In addition, interpolation can be used to decrease the input capacitance of flash ADCs. In an interpolating architecture, the number of ADC input preamplifiers is reduced significantly, and a resistor network interpolates the missing zero-crossings needed for an N-bit conversion. The resistive network also averages out the preamplifiers offsets. Consequently, an interpolating network works also as an averaging network. The resistor network used for averaging or interpolation causes a systematic non-linearity at the ADC transfer characteristics edges. The common solution to this problem is to extend the preamplifiers array beyond the input signal voltage range by using dummy preamplifiers. However, this demands a corresponding extension of the flash ADC reference-voltage resistor ladder. Since the voltage headroom of the reference ladder is considered to be a main bottleneck in the implementation of flash ADCs in deep-submicron technologies with reduced supply voltage, extending the reference voltage beyond the input voltage range is highly undesirable. The principal objective of this thesis is to develop a new circuit technique to enhance the bandwidth-accuracy product of flash ADCs. Thus, first, a rigorous analysis of flash ADC architectures accuracy-bandwidth tradeoff is presented. It is demonstrated that the interpolating architecture achieves a superior accuracy compared to that of a full flash architecture for the same input capacitance, and hence would lead to a higher bandwidth-accuracy product, especially in deep-submicron technologies that use low power supplies. Also, the gain obtained, when interpolation is employed, is quantified. In addition, the limitations of a previous claim, which suggests that an interpolating architecture is equivalent to an averaging full flash architecture that trades off accuracy for the input capacitance, is presented. Secondly, a termination technique for the averaging/interpolation network of flash ADC preamplifiers is devised. The proposed technique maintains the linearity of the ADC at the transfer characteristics edges and cancels out the over-range voltage, consumed by the dummy preamplifiers. This makes flash ADCs more amenable for integration in deep-submicron CMOS technologies. In addition, the elimination of this over-range voltage allows a larger least-significant bit. As a result, a higher input referred offset is tolerated, and a significant reductions in the ADC input capacitance and power dissipation are achieved at the same accuracy. Unlike a previous solution, the proposed technique does not introduce negative transconductance at flash ADC preamplifiers array edges. As a result, the offset averaging technique can be used efficiently. To prove the resulting saving in the ADC input capacitance and power dissipation that is attained by the proposed termination technique, a 6-bit 1.6-GS/s flash ADC test chip is designed and implemented in 0.13-$\mu$m CMOS technology. The ADC consumes 180 mW from a 1.5-V supply and achieves a Signal-to-Noise-plus-Distortion Ratio (SNDR) of 34.5 dB and 30 dB at 50-MHz and 1450-MHz input signal frequency, respectively. The measured peak Integral-Non-Linearity (INL) and Differential-Non-Linearity (DNL) are 0.42 LSB and 0.49 LSB, respectively

Design of a low power switched-capacitor pipeline analog-to-digital converter

An Analog to Digital Converter (ADC) is a circuit which converts an analog signal into digital signal. Real world is analog, and the data processed by the computer or by other signal processing systems is digital. Therefore, the need for ADCs is obvious. In this thesis, several novel designs used to improve ADCs operation speed and reduce ADC power consumption are proposed. First, a high speed switched source follower (SSF) sample and hold amplifier without feedthrough penalty is implemented and simulated. The SSF sample and hold amplifier can achieve 6 Bit resolution with sampling rate at 10Gs/s. Second, a novel rail-to-rail time domain comparator used in successive approximation register ADC (SAR ADC) is implemented and simulated. The simulation results show that the proposed SAR ADC can only consume 1.3 muW with a 0.7 V power supply. Finally, a prototype pipeline ADC is implemented and fabricated in an IBM 90nm CMOS process. The proposed design is validated using measurement on a fabricated silicon IC, and the proposed 10-bit ADC achieves a peak signal-to-noise- and-distortion-ratio (SNDR) of 47 dB. This SNDR translates to a figure of merit (FOM) of 2.6N/conversion-step with a 1.2 V power supply

Design and Implementation of a Novel Flash ADC for Ultra Wide Band Applications

This dissertation presents a design and implementation of a novel flash ADC architecture for ultra wide band applications. The advancement in wireless technology takes us in to a world without wires. Most of the wireless communication systems use digital signal processing to transmit as well as receive the information. The real world signals are analog. Due to the processing complexity of the analog signal, it is converted to digital form so that processing becomes easier. The development in the digital signal processor field is rapid due to the advancement in the integrated circuit technology over the last decade. Therefore, analog-to -digital converter acts as an interface in between analog signal and digital signal processing systems. The continuous speed enhancement of the wireless communication systems brings out huge demands in speed and power specifications of high-speed low-resolution analog-to -digital converters. Even though wired technology is a primary mode of communication, the quality and efficiency of the wireless technology allows us to apply to biomedical applications, in home services and even to radar applications. These applications are highly relying on wireless technology to send and receive information at high speed with great accuracy. Ultra Wideband (UWB) technology is the best method to these applications. A UWB signal has a bandwidth of minimum 500MHz or a fractional bandwidth of 25 percentage of its centre frequency. The two different technology standards that are used in UWB are multiband orthogonal frequency division multiplexing ultra wideband technology (MB-OFDM) and carrier free direct sequence ultra wideband technology (DS-UWB). ADC is the core of any UWB receiver. Generally a high speed flash ADC is used in DS-UWB receiver. Two different flash ADC architectures are proposed in this thesis for DS-UWB applications. The first design is a high speed five bit flash ADC architecture with a sampling rate of 5 GS/s. The design is verified using CADENCE tool with CMOS 90 nm technology. The total power dissipation of the ADC is 8.381 mW from power supply of 1.2 V. The die area of the proposed flash ADC is 186 μm × 210 μm (0.039 mm2). The proposed flash ADC is analysed and compared with other papers in the literature having same resolution and it is concluded that it has the highest speed of operation with medium power dissipation. iii The second design is a reconfigurable five bit flash ADC architecture with a sampling rate of 1.25 GS/s. The design is verified using CADENCE tool with UMC 180 nm technology. The total power dissipation of the ADC is 11.71 mW from power supply of 1.8 V. The die area of the implementation is 432 μm × 720 μm (0.31104 mm2). The chip tape out of the proposed reconfigurable flash ADC is made for fabrication

Accuracy enhancement techniques in low-voltage high-speed pipelined ADC design

Pipelined analog to digital converters (ADCs) are very important building blocks in many electronic systems such as high quality video systems, high performance digital communication systems and high speed data acquisition systems. The rapid development of these applications is driving the design of pipeline ADCs towards higher speed, higher dynamic range, lower power consumption and lower power supply voltage with the CMOS technology scaling. This trend poses great challenges to conventional pipelined ADC designs which rely on high-gain operational amplifiers (opamps) and well matched capacitors to achieve high accuracy. In this thesis, two novel accuracy improvement techniques to overcome the accuracy limit set by analog building blocks (opamps and capacitors) in the context of low-voltage and high-speed pipelined ADC design are presented. One is the time-shifted correlated double sampling (CDS) technique which addresses the finite opamp gain effect and the other is the radix-based background digital calibration technique which can take care of both finite opamp gain and capacitor mismatch. These methods are simple, easy to implement and power efficient. The effectiveness of the proposed techniques is demonstrated in simulation as well as in experiment. Two prototype ADCs have been designed and fabricated in 0.18μm CMOS technology as the experimental verification of the proposed techniques. The first ADC is a 1.8V 10-bit pipeline ADC which incorporated the time-shifted CDS technique to boost the effective gain of the amplifiers. Much better gain-bandwidth tradeoff in amplifier design is achieved with this gain boosting. Measurement results show total power consumption of 67mW at 1.8V when operating at 100MSPS. The SNR, SNDR and SFDR are 55dB, 54dB and 65dB respectively given a 1MHz input signal. The second one is a 0.9V 12-bit two-stage cyclic ADC which employed a novel correlation-based background calibration to enhance the linearity. The linearity limit set by the capacitor mismatches, finite opamp gain effects is exceeded. After calibration, the SFDR is improved by about 33dB and exceeds 80dB. The power consumption is 12mW from 0.9V supply when operating at 2MSPS

Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems

The objective of the research is to develop high-speed ADCs and mixed-signal demodulator for multi-gigabit communication systems using millimeter-wave frequency bands in standard CMOS technology. With rapid advancements in semiconductor technologies, mobile communication devices have become more versatile, portable, and inexpensive over the last few decades. However, plagued by the short lifetime of batteries, low power consumption has become an extremely important specification in developing mobile communication devices. The ever-expanding demand of consumers to access and share information ubiquitously at faster speeds requires higher throughputs, increased signal-processing functionalities at lower power and lower costs. In today’s technology, high-speed signal processing and data converters are incorporated in almost all modern multi-gigabit communication systems. They are key enabling technologies for scalable digital design and implementation of baseband signal processors. Ultimately, the merits of a high performance mixed-signal receiver, such as data rate, sensitivity, signal dynamic range, bit-error rate, and power consumption, are directly related to the quality of the embedded ADCs. Therefore, this dissertation focuses on the analysis and design of high-speed ADCs and a novel broadband mixed-signal demodulator with a fully-integrated DSP composed of low-cost CMOS circuitry. The proposed system features a novel dual-mode solution to demodulate multi-gigabit BPSK and ASK signals. This approach reduces the resolution requirement of high-speed ADCs, while dramatically reducing its power consumption for multi-gigabit wireless communication systems.PhDGee-Kung Chang - Committee Chair; Chang-Ho Lee - Committee Member; Geoffrey Ye Li - Committee Member; Paul A. Kohl - Committee Member; Shyh-Chiang Shen - Committee Membe

Time interleaved counter analog to digital converters

The work explores extending time interleaving in A/D converters, by applying a high-level of parallelism to one of the slowest and simplest types of data-converters, the counter ADC. The motivation for the work is to realise high-performance re-configurable A/D converters for use in multi-standard and multi-PHY communication receivers with signal bandwidths in the 10s to 100s of MHz. The counter ADC requires only a comparator, a ramp signal, and a digital counter, where the comparator compares the sampled input against all possible quantisation levels sequentially. This work explores arranging counter ADCs in large time-interleaved arrays, building a Time Interleaved Counter (TIC) ADC. The key to realising a TIC ADC is distributed sampling and a global multi-phase ramp generator realised with a novel figure-of-8 rotating resistor ring. Furthermore Counter ADCs allow for re-configurability between effective sampling rate and resolution due to their sequential comparison of reference levels in conversion. A prototype TIC ADC of 128-channels was fabricated and measured in 0.13μm CMOS technology, where the same block can be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter. The ADC achieves a sub 400fJ/step FOM in all modes of configuration

LOW-VOLTAGE LOW-POWER ANALOG-TO-DIGITAL CONVERTERS

Ph.DDOCTOR OF PHILOSOPH

A test structure for the measurement and characterization of layout-induced transistor variation

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student-submitted PDF version of thesis.Includes bibliographical references (p. 131-139).Transistor scaling has enabled us to design circuits with higher performance, lower cost, and higher density; billions of transistors can now be integrated onto a single die. However, this trend also magnifies the significance of device variability. In this thesis, we focus on the study of layout-induced systematic variation. Specifically, we investigate how pattern densities can affect transistor behavior. Two pattern densities are chosen in our design: polysilicon density and shallow-trench isolation (STI) density. A test structure is designed to study the systematic spatial dependency between transistors in order to determine the impact of different variation sources on transistor characteristics and understand the radius of influence that defines the neighborhood of shapes which play a part in determining the transistor characteristics. A more accurate transistor model based on surrounding layout details can be built using these results. The test structure is divided into six blocks, each having a different polysilicon density or STI density. A rapid change of pattern density between blocks is designed to emulate a step response for future modeling. The two pattern densities are chosen to reflect the introduction of new process technologies, such as strain engineering and rapid thermal annealing. The test structure is designed to have more than 260K devices under test (DUT). In addition to the changes in pattern density, the impact of transistor sizing, number of polysilicon fingers, finger spacing, and active area are also explored and studied in this thesis. Two different test circuits are designed to perform the measurement.(cont.) The first test circuit is designed to work with of-chip wafer probe testing equipment; the second test circuit is designed to have on-chip current measurement capabilities using a high dynamic range analog-to-digital converter (ADC). The ADC has a dynamic range of over four orders of magnitude to measure currents from 50nA to 1mA. The test chip also implements a hierarchical design with a minimum amount of peripheral circuitry, so that most of the chip area is dedicated for the transistors under test.by Albert Hsu Ting Chang.S.M

Topical Workshop on Electronics for Particle Physics

The purpose of the workshop was to present results and original concepts for electronics research and development relevant to particle physics experiments as well as accelerator and beam instrumentation at future facilities; to review the status of electronics for the LHC experiments; to identify and encourage common efforts for the development of electronics; and to promote information exchange and collaboration in the relevant engineering and physics communities