Single-Event Upset Analysis and Protection in High Speed Circuits

The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at the input of a flip-flop and consequently is latched in the flip-flop and generates a soft-error. When an SET conjoined with a transition at a node along a critical path of the combinational part of a design, a transient delay fault may occur at the input of a flip-flop. On the other hand, increasing pipeline depth and using low power techniques such as multi-level power supply, and multi-threshold transistor convert almost all paths in a circuit to critical ones. Thus, studying the behavior of the SET in these kinds of circuits needs special attention. This paper studies the dynamic behavior of a circuit with massive critical paths in the presence of an SET. We also propose a novel flip-flop architecture to mitigate the effects of such SETs in combinational circuits. Furthermore, the proposed architecture can tolerant a single event upset (SEU) caused by particle strike on the internal nodes of a flip-flo

Fault-tolerance techniques for hybrid CMOS/nanoarchitecture

The authors propose two fault-tolerance techniques for hybrid CMOS/nanoarchitecture implementing logic functions as look-up tables. The authors compare the efficiency of the proposed techniques with recently reported methods that use single coding schemes in tolerating high fault rates in nanoscale fabrics. Both proposed techniques are based on error correcting codes to tackle different fault rates. In the first technique, the authors implement a combined two-dimensional coding scheme using Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes to address fault rates greater than 5. In the second technique, Hamming coding is complemented with bad line exclusion technique to tolerate fault rates higher than the first proposed technique (up to 20). The authors have also estimated the improvement that can be achieved in the circuit reliability in the presence of Don-t Care Conditions. The area, latency and energy costs of the proposed techniques were also estimated in the CMOS domain

Reliable and Energy Efficient MLC STT-RAM Buffer for CNN Accelerators

We propose a lightweight scheme where the formation of a data block is changed in such a way that it can tolerate soft errors significantly better than the baseline. The key insight behind our work is that CNN weights are normalized between -1 and 1 after each convolutional layer, and this leaves one bit unused in half-precision floating-point representation. By taking advantage of the unused bit, we create a backup for the most significant bit to protect it against the soft errors. Also, considering the fact that in MLC STT-RAMs the cost of memory operations (read and write), and reliability of a cell are content-dependent (some patterns take larger current and longer time, while they are more susceptible to soft error), we rearrange the data block to minimize the number of costly bit patterns. Combining these two techniques provides the same level of accuracy compared to an error-free baseline while improving the read and write energy by 9% and 6%, respectively