MICRO-ELECTRO-MECHANICAL SYSTEM OSCILLATING ACCELERAMETERS WITH CMOS READOUT CIRCUITS

Ph.DDOCTOR OF PHILOSOPH

MEMS Accelerometers

Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc

CMOS systems and circuits for sub-degree per hour MEMS gyroscopes

The objective of our research is to develop system architectures and CMOS circuits that interface with high-Q silicon microgyroscopes to implement navigation-grade angular rate sensors. The MEMS sensor used in this work is an in-plane bulk-micromachined mode-matched tuning fork gyroscope (M² – TFG ), fabricated on silicon-on-insulator substrate. The use of CMOS transimpedance amplifiers (TIA) as front-ends in high-Q MEMS resonant sensors is explored. A T-network TIA is proposed as the front-end for resonant capacitive detection. The T-TIA provides on-chip transimpedance gains of 25MΩ, has a measured capacitive resolution of 0.02aF /√Hz at 15kHz, a dynamic range of 104dB in a bandwidth of 10Hz and consumes 400μW of power. A second contribution is the development of an automated scheme to adaptively bias the mechanical structure, such that the sensor is operated in the mode-matched condition. Mode-matching leverages the inherently high quality factors of the microgyroscope, resulting in significant improvement in the Brownian noise floor, electronic noise, sensitivity and bias drift of the microsensor. We developed a novel architecture that utilizes the often ignored residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching (i.e.0Hz split between the drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS implementation is developed that allows mode-matching of the drive and sense frequencies of a gyroscope at a fraction of the time taken by current state of-the-art techniques. Further, this mode-matching technique allows for maintaining a controlled separation between the drive and sense resonant frequencies, providing a means of increasing sensor bandwidth and dynamic range. The mode-matching CMOS IC, implemented in a 0.5μm 2P3M process, and control algorithm have been interfaced with a 60μm thick M2−TFG to implement an angular rate sensor with bias drift as low as 0.1°/hr ℃ the lowest recorded to date for a silicon MEMS gyro.Ph.D.Committee Chair: Farrokh Ayazi; Committee Member: Jennifer Michaels; Committee Member: Levent Degertekin; Committee Member: Paul Hasler; Committee Member: W. Marshall Leac

High performance readout circuits and devices for Lorentz force resonant CMOS-MEMS magnetic sensors

In the last decades, sensing capabilities of martphones have greatly improved since the early mobile phones of the 90’s. Moreover, wearables and the automotive industry require increasing electronics and sensing sophistication. In such echnological advance, Micro Electro Mechanical Systems (MEMS) have played an important role as accelerometers and gyroscopes were the first sensors based on MEMS technology massively introduced in the market. In contrast, it still does not exist a commercial MEMS-based compass, even though Lorentz force MEMS magnetometers were first proposed in the late 90’s. Currently, Lorentz force MEMS magnetometers have been under the spotlight as they can offer an integrated solution to nowadays sensing power. As a consequence, great advances have been achieved, but various bottlenecks limit the introduction of Lorentz force MEMS compasses in the market. First, current MEMS magnetometers require high current consumption and high biasing voltages to achieve good sensitivities. Moreover, even though devices with excellent performance and sophistication are found in the literature, there is still a lack of research on the readout electronic circuits, specially in the digital signal processing, and closed loop control. Second, most research outcomes rely on custom MEMS fabrication rocesses to manufacture the devices. This is the same approach followed in current commercial MEMS, but it requires different fabrication processes for the electronics and the MEMS. As a consequence, manufacturing cost is high and sensor performance is affected by the MEMS-electronics interface parasitics. This dissertation presents potential solutions to these issues in order to pave the road to the commercialization of Lorentz force MEMS compasses. First, a complete closed loop, digitally controlled readout system is proposed. The readout circuitry, implemented with off-the-shelf commercial components, and the digital control, on an FPGA, are proposed as a proof of concept of the feasibility, and potential benefits, of such architecture. The proposed system has a measured noise of 550 nT / vHz while the MEMS is biased with 300 µA rms and V = 1 V . Second, various CMOS-MEMS magnetometers have been designed using the BEOL part of the TSMC and SMIC 180 nm standard CMOS processes, and wet and vapor etched. The devices measurement and characterisation is used to analyse the benefits and drawbacks of each design as well as releasing process. Doing so, a high volume manufacturing viability can be performed. Yield values as high as 86% have been obtained for one device manufactured in a SMIC 180 nm full wafer run, having a sensitivity of 2.82 fA/µT · mA and quality factor Q = 7.29 at ambient pressure. While a device manufactured in TSMC 180 nm has Q = 634.5 and a sensitivity of 20.26 fA/µT ·mA at 1 mbar and V = 1 V. Finally, an integrated circuit has been designed that contains all the critical blocks to perform the MEMS signal readout. The MEMS and the electronics have been manufactured using the same die area and standard TSMC 180 nm process in order to reduce parasitics and improve noise and current consumption. Simulations show that a resolution of 8.23 µT /mA for V = 1 V and BW = 10 Hz can be achieved with the designed device.En les últimes dècades, tenint en compte els primers telèfons mòbils dels anys 90, les capacitats de sensat dels telèfons intel·ligents han millorat notablement. A més, la indústria automobilística i de wearables necessiten cada cop més sofisticació en el sensat. Els Micro Electro Mechanical Systems (MEMS) han tingut un paper molt important en aquest avenç tecnològic, ja que acceleròmetres i giroscopis varen ser els primers sensors basats en la tecnologia MEMS en ser introduïts massivament al mercat. En canvi, encara no existeix en la indústria una brúixola electrònica basada en la tecnologia MEMS, tot i que els magnetòmetres MEMS varen ser proposats per primera vegada a finals dels anys 90. Actualment, els magnetòmetres MEMS basats en la força de Lorentz són el centre d'atenció donat que poden oferir una solució integrada a les capacitats de sensat actuals. Com a conseqüència, s'han aconseguit grans avenços encara que existeixen diversos colls d'ampolla que encara limiten la introducció al mercat de brúixoles electròniques MEMS basades en la força de Lorentz. Per una banda, els agnetòmetres MEMS actuals necessiten un consum de corrent i un voltatge de polarització elevats per aconseguir una bona sensibilitat. A més, tot i que a la literatura hi podem trobar dispositius amb rendiments i sofisticació excel·lents, encara existeix una manca de recerca en el circuit de condicionament, especialment de processat digital i control del llaç. Per altra banda, moltes publicacions depenen de processos de fabricació de MEMS fets a mida per fabricar els dispositius. Aquesta és la mateixa aproximació que s'utilitza actualment en la indústria dels MEMS, però té l'inconvenient que requereix processos de fabricació diferents pels MEMS i l’electrònica. Per tant, el cost de fabricació és alt i el rendiment del sensor queda afectat pels paràsits en la interfície entre els MEMS i l'electrònica. Aquesta tesi presenta solucions potencials a aquests problemes amb l'objectiu d'aplanar el camí a la comercialització de brúixoles electròniques MEMS basades en la força de Lorentz. En primer lloc, es proposa un circuit de condicionament complet en llaç tancat controlat digitalment. Aquest s'ha implementat amb components comercials, mentre que el control digital del llaç s'ha implementat en una FPGA, tot com una prova de concepte de la viabilitat i beneficis potencials que representa l'arquitectura proposada. El sistema presenta un soroll de 550 nT / vHz quan el MEMS està polaritzat amb 300 µArms i V = 1 V . En segon lloc, s'han dissenyat varis magnetòmetres CMOS-MEMS utilitzant la part BEOL dels processos CMOS estàndard de TSMC i SMIC 180 nm, que després s'han alliberat amb líquid i gas. La mesura i caracterització dels dispositius s’ha utilitzat per analitzar els beneficis i inconvenients de cada disseny i procés d’alliberament. D'aquesta manera, s'ha pogut realitzar un anàlisi de la viabilitat de la seva fabricació en massa. S'han obtingut valors de yield de fins al 86% per un dispositiu fabricat amb SMIC 180 nm en una oblia completa, amb una sensibilitat de 2.82 fA/µT · mA i un factor de qualitat Q = 7.29 a pressió ambient. Per altra banda, el dispositiu fabricat amb TSMC 180 nm presenta una Q = 634.5 i una sensibilitat de 20.26 fA/µT · mA a 1 mbar amb V = 1 V. Finalment, s'ha dissenyat un circuit integrat que conté tots els blocs per a realitzar el condicionament de senyal del MEMS. El MEMS i l'electrònica s'han fabricat en el mateix dau amb el procés estàndard de TSMC 180 nm per tal de reduir paràsits i millorar el soroll i el consum de corrent. Les simulacions mostren una resolució de 8.23 µT /mA amb V = 1 V i BW = 10 Hz pel dispositiu dissenyat

Degree-per-hour mode-matched micromachined silicon vibratory gyroscopes

The objective of this research dissertation is to design and implement two novel micromachined silicon vibratory gyroscopes, which attempt to incorporate all the necessary attributes of sub-deg/hr noise performance requirements in a single framework: large resonant mass, high drive-mode oscillation amplitudes, large device capacitance (coupled with optimized electronics), and high-Q resonant mode-matched operation. Mode-matching leverages the high-Q (mechanical gain) of the operating modes of the gyroscope and offers significant improvements in mechanical and electronic noise floor, sensitivity, and bias stability. The first micromachined silicon vibratory gyroscope presented in this work is the resonating star gyroscope (RSG): a novel Class-II shell-type structure which utilizes degenerate flexural modes. After an iterative cycle of design optimization, an RSG prototype was implemented using a multiple-shell approach on (111) SOI substrate. Experimental data indicates sub-5 deg/hr Allan deviation bias instability operating under a mode-matched operating Q of 30,000 at 23ºC (in vacuum). The second micromachined silicon vibratory gyroscope presented in this work is the mode-matched tuning fork gyroscope (M2-TFG): a novel Class-I tuning fork structure which utilizes in-plane non-degenerate resonant flexural modes. Operated under vacuum, the M2-TFG represents the first reported high-Q perfectly mode-matched operation in Class-I vibratory microgyroscope. Experimental results of device implemented on (100) SOI substrate demonstrates sub-deg/hr Allan deviation bias instability operating under a mode-matched operating Q of 50,000 at 23ºC. In an effort to increase capacitive aspect ratio, a new fabrication technology was developed that involved the selective deposition of doped-polysilicon inside the capacitive sensing gaps (SPD Process). By preserving the structural composition integrity of the flexural springs, it is possible to accurately predict the operating-mode frequencies while maintaining high-Q operation. Preliminary characterization of vacuum-packaged prototypes was performed. Initial results demonstrated high-Q mode-matched operation, excellent thermal stability, and sub-deg/hr Allan variance bias instability.Ph.D.Committee Chair: Dr. Farrokh Ayazi; Committee Member: Dr. Mark G. Allen; Committee Member: Dr. Oliver Brand; Committee Member: Dr. Paul A. Kohl; Committee Member: Dr. Thomas E. Michael

Design of CMOS transimpedance amplifiers for remote antenna units in fiber-wireless systems.

La memoria de la tesis doctoral: Diseño de Amplificadores de Transimpedancia para Unidades de Antena Remota en Sistemas Fibra-Inalámbrico, se presenta en la modalidad de compendio de Publicaciones. A continuación, se expone un resumen del contexto, motivation y objetivos de la tesis.A lo largo de las últimas décadas, los avances tecnológicos y el esfuerzo por desarrollar nuevos sistemas de comunicaciones han crecido al ritmo que la demanda de información aumentaba a nivel mundial. Desde la aparición de Internet, el tráfico global de datos ha incrementado de forma exponencial y se han creado infinidad de aplicaciones y contenidos desde entonces.Con la llegada de la fibra óptica se produjo un avance muy significativo en el campo de las comunicaciones, ya que la fibra de vidrio y sus características fueron la clave para crear redes de largo alcance y alta velocidad. Por otro lado, los avances en las tecnologías de fabricación de circuitos integrados y de dispositivos fotónicos de alta velocidad han encabezado el desarrollo de los sistemas de comunicaciones ópticos, logrando incrementar la tasa de transmisión de datos hasta prácticamente alcanzar el ancho de banda de la fibra óptica.Para conseguir una mayor eficiencia en las comunicaciones y aumentar la tasa de transferencia, se necesitan métodos de modulación complejos que aprovechen mejor el ancho de banda disponible. No obstante, esta mayor complejidad de la modulación de los datos requiere sistemas con mejores prestaciones en cuanto a rango dinámico y linealidad. Estos esquemas de modulación se emplean desde hace tiempo en los sistemas de comunicaciones inalámbricos, donde el ancho de banda del canal, el aire, es extremadamente limitado y codiciado.Actualmente, los sistemas inalámbricos se enfrentan a una saturación del espectro que supone un límite a la tasa de transmisión de datos. Pese a los esfuerzos por extender el rango frecuencial a bandas superiores para aumentar el ancho de banda disponible, se espera un enorme aumento tanto en el número de dispositivos, como en la cantidad de datos demandados por usuario.Ante esta situación se han planteado distintas soluciones para superar estas limitaciones y mejorar las prestaciones de los sistemas actuales. Entre estas alternativas están los sistemas mixtos fibra-inalámbrico utilizando sistemas de antenas distribuidas (DAS). Estos sistemas prometen ser una solución económica y muy efectiva para mejorar la accesibilidad de los dispositivos inalámbricos, aumentando la cobertura y la tasa de transferencia de las redes a la vez que disminuyen las interferencias. El despliegue de los DAS tendrá un gran efecto en escenarios tales como edificios densamente poblados, hospitales, aeropuertos o edificios de oficinas, así como en áreas residenciales, donde un gran número de dispositivos requieren una cada vez mayor interconectividad.Dependiendo del modo de transmisión de los datos a través de la fibra, los sistemas mixtos fibra-inalámbrico se pueden categorizar de tres formas distintas: Banda base sobre fibra (BBoF), radiofrecuencia sobre fibra (RFoF) y frecuencia intermedia sobre fibra (IFoF). Actualmente, el esquema BBoF es el más utilizado para transmisiones de larga y media distancia. No obstante, utilizar este esquema en un DAS requiere unidades de antena remota (RAU) complejas y costosas, por lo que no está claro que esta configuración pueda ser viable en aplicaciones de bajo coste que requieran de un gran número de RAUs. Los sistemas RFoF e IFoF presentan esquemas más simples, sin necesidad de integrar un modulador/demodulador, puesto que la señal se procesa en una estación base y no en las propias RAUs.El desarrollo de esta tesis se enmarca en el estudio de los distintos esquemas de DAS. A lo largo de esta tesis se presentan varias propuestas de amplificadores de transimpedancia (TIA) adecuadas para su implementación en cada uno de los tres tipos de RAU existentes. La versatilidad y el amplio campo de aplicación de este circuito integrado, tanto en comunicaciones como en otros ámbitos, han motivado el estudio de la implementación de este bloque específico en las diferentes arquitecturas de RAU y en otros sistemas, tales como un receptor de televisión por cable (CATV) o una interfaz de un microsensor inercial capacitivo.La memoria de tesis se ha dividido en tres capítulos. El Capítulo 1 se ha empleado para introducir el concepto de los DAS, proporcionando el contexto y la motivación del diseño de las RAU, partiendo desde los principios básicos de operación de los dispositivos fotónicos y electrónicos y presentando las distintas arquitecturas de RAU. El Capítulo 2 supone el núcleo principal de la tesis. En este capítulo se presenta el estudio y diseño de los diferentes TIAs, que han sido optimizados respectivamente para cada una de las configuraciones de RAU, así como para otras aplicaciones. En un tercer capítulo se recogen los resultados más relevantes y se exponen las conclusiones de este trabajo.Tras llevar a cabo la descripción y comparación de las topologías existentes de TIA, se ha llegado a las siguientes conclusiones, las cuales nos llevan a elegir la topología shunt-feedback como la más adecuada para el diseño: - El compromiso entre ancho de banda, transimpedancia, consumo de potencia y ruido es menos restrictivo en los TIAs de lazo cerrado. - Los TIAs de lazo cerrado tienen un mayor número de grados de libertad para acometer su diseño. - Esta topología presenta una mejor linealidad gracias al lazo de realimentación. Si la respuesta frecuencial del núcleo del amplificador se ajusta de manera adecuada, el TIA shunt-feedback puede presentar una respuesta frecuencial plana y estable.En esta tesis, se ha propuesto una nueva técnica de reducción de ruido, aplicable en receptores ópticos con fotodiodos con un área activa grande (~1mm2). Esta estrategia, que se ha llamado la técnica del fotodiodo troceado, consiste en la fabricación del fotodiodo, no como una estructura única, sino como un array de N sub-fotodiodos, que ocuparían la misma área activa que el original. Las principales conclusiones tras hacer un estudio teórico y realizar un estudio de su aplicación en una de las topologías de TIA propuestas son: - El ruido equivalente a la entrada es menor cuanto mayor es el número de sub-fotodiodos, dado que la contribución al ruido que depende con el cuadrado de la frecuencia (f^2) decrece con una dependencia proporcional a N. - Con una aplicación simple de la técnica, replicando el amplificador de tensión del TIA N veces y utilizando N resistencias de realimentación, cada una con un valor N veces el original, la sensibilidad del receptor aumenta aproximadamente en un factor √N y la estabilidad del sistema no se ve afectada. - Al dividir el fotodiodo en N sub-fotodiodos, la capacidad parásita de cada uno de ellos es N veces menor a la original. Con esta nueva capacidad parásita, el diseño del TIA se puede optimizar, consiguiendo una sensibilidad mucho mejor que con un único fotodiodo para el mismo valor de consumo de potencia.Las principales conclusiones respecto a los diseños de los distintos TIAs para comunicaciones son las siguientes: TIA para BBoF: - El TIA propuesto, alcanza, con un consumo de tan solo 2.9 mW, un ancho de banda de 1 GHz y una sensibilidad de -11 dBm, superando las características de trabajos anteriores en condiciones similares (capacidad del fotodiodo, tecnología y tasa de transmisión). - La técnica del fotodiodo troceado se ha aplicado a este circuito, consiguiendo una mejora de hasta 7.9 dBm en la sensibilidad para un diseño optimizado de 16 sub-fotodiodos, demostrando, en una simulación a nivel de transistor, que la técnica propuesta funciona correctamente. TIA para RFoF: - El diseño propuesto logra una figura de mérito superior a la de trabajos previos, gracias a la combinación de su bajo consumo de potencia y su mayor transimpedancia. - Además, mientras que en la mayoría de trabajos previos no se integra un control de ganancia en el TIA, esta propuesta presenta una transimpedancia controlable desde 45 hasta 65 dBΩ. A través de un sistema de control simultáneo de la transimpedancia y de la ganancia en lazo abierto del amplificador de voltaje, se consigue garantizar una respuesta frecuencial plana y estable en todos los estados de transimpedancia, que le otorga al diseño una superior versatilidad y flexibilidad. TIA para CATV: - Se ha adaptado una versión del TIA para RFoF para demostrar la capacidad de adaptación de esta estructura en una implementación en un receptor CATV con un rango de control de transimpedancia de 18 dB. - Con la implementación del control de ganancia en el TIA, no es necesario el uso de un atenuador variable en el receptor, simplificando así el número de etapas del mismo. - Gracias al control de transimpedancia, el TIA logra rangos de entrada similares a los publicados en trabajos anteriores basados en una tecnología mucho menos accesible como GaAs PHEMT. TIA para IFoF Se ha fabricado un chip en una tecnología CMOS de 65 nm que opera a 1.2 V de tensión de alimentación y se ha realizado su caracterización eléctrica y óptica. - El TIA presenta una programabilidad de su transimpedancia con un control lineal en dB entre 60 y 76 dBΩ mediante un código termómetro de 4 bits. - El ancho de banda se mantiene casi constante en todo el rango de transimpedancia, entre 500 y 600 MHz.Como conclusión general tras comparar el funcionamiento de los TIAs para las distintas configuraciones de RAU, vale la pena mencionar que el TIA para IFoF consigue una figura de mérito muy superior a la de otros trabajos previos diseñados para RFoF. Esto se debe principalmente a la mayor transimpedancia y al muy bajo consumo de potencia del TIA para IFoF propuesto. Además, se consigue una mejor linealidad, ya que, para una transmisión de 54 Mb/s con el estándar 802.11a, se consigue un EVM menor de 2 % en un rango de entrada de 10 dB, comparado con los entre 3 y 5 dB reportados en trabajos previos. El esquema IFoF presenta un gran potencial y ventajas frente al RFoF, lo que lo coloca como una buena alternativa para disminuir los costes y mejorar el rendimiento de los sistemas de antenas distribuidas.Por último, cabe destacar que el diseño de TIA propuesto y fabricado para IFoF contribuye en gran medida al desarrollo y validación de una RAU completa. Se ha demostrado la capacidad de la estructura propuesta para alcanzar un bajo ruido, alta linealidad, simplicidad en la programabilidad de la transimpedancia y adaptabilidad de la topología para diferentes requisitos, lo cual es de un gran interés en el diseño de receptores ópticos.Por otra parte, una versión del TIA para su uso en una interfaz de sensores MEMS capacitivos se ha propuesto y estudiado. Consiste en un convertidor capacidad-voltaje basado en una versión del TIA para RFoF, con el objetivo de conseguir un menor ruido y proveer de una adaptabilidad para diferentes sensores capacitivos. Los resultados más significativos y las conclusiones de este diseño se resumen a continuación: - El TIA presenta un control de transimpedancia con un rango de 34 dB manteniendo el ancho de banda constante en 1.2 MHz. También presenta un control independiente del ancho de banda, desde 75 kHz hasta 1.2 MHz, manteniendo la transimpedancia fija en un valor máximo. - Con un consumo de potencia de tan solo 54 μW, el TIA alcanza una sensibilidad máxima de 1 mV/fF, que corresponde a una sensibilidad de 4.2 mV/g y presenta un ruido de entrada de tan solo 100 µg/√("Hz" ) a 50 kHz en la configuración de máxima transimpedancia.La principal conclusión que destaca de este diseño es su versatilidad y flexibilidad. El diseño propuesto permite adaptar fácilmente la respuesta de la interfaz a una amplia gama de dispositivos sensores, ya que se puede ajustar el ancho de banda para ajustarse a distintas frecuencias de operación, así como la transimpedancia puede ser modificada para conseguir distintas sensibilidades. Este doble control independiente de ancho de banda y transimpedancia le proporcionan una adaptabilidad completa al TIA.<br /

Micro-g MEMS accelerometer based on time measurement

Programa Doutoral em Engenharia Electrónica e de ComputadoresThe MEMS sensor market has experienced an amazing growth on the last decades, with accelerometers being one of the pioneers pushing the technology into widespread use with its applications on automotive industry. Since then, accelerometers have been gradually replacing conventional sensors due mainly to its lower cost. As the performance of MEMS accelerometers improves, the applications range where they replace conventional accelerometers increases. Nowadays, there is still a large range of applications for which suitable MEMS accelerometers are yet to be developed. This work focuses on the development of a high performance accelerometer taking advantage of the high sensitivity of a non-linear phenomenon that occurs in electrostatically actuated movable capacitive microdevices: electrostatic pull-in. Although the pull-in effect has been known for more than 40 years, it is usually avoided when dealing with movable microstructures as it leads to a region of instability, where the position of movable parts cannot be fully controlled. In the last decade, the pull-in displacement profile of 1-DOF parallel-plates devices has been the subject of research that revealed the presence of a so-called meta-stability. This meta-stability occurs in specific damping and voltage actuation conditions and translates as a non-linear displacement profile, rather than simple time-of-flight. This feature makes the pull-in time duration significantly longer, and it happens to be extremely sensitive to intervenient forces, such as external acceleration. Basically, measuring the pull-in time of specifically designed microstructures (while maintaining the other parameters constant) allows the measurement of the external acceleration that acts on the system. Using a pull-in time measurement rather than direct capacitance/displacement/acceleration transduction presents several advantages. The most important is the fact that time can be measured very accurately with technology readily available. For instance, if one uses a 100MHz clock on the time counting mechanism, which corresponds to a time measurement resolution of 100 ns, given the 0.26 μs/μg sensitivity of the accelerometer developed in this work, an acceleration resolution of 0.38 μg could be achieved. One of the main challenges of the time based accelerometer development is the damper design, as damping is of outmost importance in defining the accelerometer performance parameters, namely sensitivity and noise. A new squeeze-film damper geometry design has been presented and studied. It consists of flow channels implemented on the parallel-plates that relieve the squeeze-film damping pressures generated when the device is moving. This geometry has proved to be very effective in increasing the capacitance/damping ratio in parallel-plates, which was up to now a great challenge of in-plane parallel-plates design. This work reports the development of an open-loop accelerometer with 0.26 μs/μg sensitivity and 2.7 μg /√Hz noise performance. The MEMS structures used for its experimental implementation were fabricated using a commercially available SOI micromachining process. The main drawbacks of this accelerometer were the low system bandwidth and non-linearity. Closed-loop approaches using electrostatic feedback were explored in this work in order to overcome these limitations, and the dynamic range was successfully extended to 109 dB along with improvements on the linearity. From the thorough damping study performed in this work, a new application for the pullin time using the same microstructures was developed. It consists of a gas viscosity sensing application. At the low frequencies operated, damping is directly proportional to the viscosity of the gas medium. The experimental results obtained with gases with viscosities ranging from 8 μP to 18 μP have shown a sensitivity of 2 ms/μP, making the pull-in time viscosity sensor a very promising approach.Nas últimas décadas assistiu-se a um imenso crescimento no mercado de sensors MEMS, tendo os acelerómetros sido uma das maiores forças impulsionadoras desse crescimento devido às suas aplicações na indústria automóvel. Desde então, a gama de aplicações destes sensores expandiu-se multidirecionalmente, novas aplicações emergiram e acelerómetros convencionais em aplicações já existentes foram substituídos por acelerómetros MEMS. Isto deve-se essencialmente ao seu baixo custo e pequenas dimensões. Há no entanto, aplicações para as quais o desempenho dos acelerómetros MEMS ainda não é suficiente. O objectivo deste trabalho é desenvolver um acelerómetro de elevado desempenho tirando partido da elevada sensibilidade do efeito de pull-in a forças externas tais como a aceleração. O efeito de pull-in, descrito pela primeira vez há mais de 40 anos, ocorre em dispositivos capacitivos com partes móveis. Este é um efeito não-linear geralmente evitado/indesejado, uma vez que se traduz numa instabilidade que dificulta o controlo da posição das partes móveis. Na última década foi dedicada alguma investigaçao científica a este fenómeno, tendo sido descoberta a existência de um perfil de deslocamento particular, denominado meta-estabilidade, em determinadas condições de amortecimento e de actuação electrostática. Esta característica do pull-in torna a sua duração extremamente sensível a variações nas forças intervenientes, incluindo aceleração externa. Assim sendo, a medição do tempo de pull-in de micro-estruturas especificamente concebidas para o efeito pode ser utilizada para medir aceleração. Esta abordagem apresenta vantagens significativas em comparação com a transdução direta de capacidade para aceleração (caso da generalidade dos acelerómetros capacitivos). Nomeadamente, a variável tempo pode ser medida com elevada precisão com relativa facilidade e sem necessidade de desenvolvimentos tecnológicos (o que não é o caso da medição de capacidade). Por exemplo, o uso de uma frequência de relógio de 100 MHz no mecanismo de contagem de tempo permite uma resolução de 100 ns na medição de tempo, o que corresponde, considerando a sensibilidade de 0.26 μs/μg do acelerómetro desenvolvido neste trabalho, a uma resolução na medição de acceleração de 0.38μg. Um dos maiores desafios do desenvolvimento de um acelerómetro baseado no tempo de pull-in é o desenho do amortecedor, pois a sensibilidade e o ruído/resolução do sensor final dependem do nível de amortecimento. Uma nova geometria para o amortecedor (estabelecido por um mecanismo de squeeze-film) é apresentada e estudada neste trabalho. Esta consiste em abrir canais nas placas paralelas facilitando assim o fluxo de ar quando as placas se movem. Ficou provado que esta geometria é eficaz na redução da razão capacidade/amortecimento, o que constituía um problema recorrente no desenho de dispositivos de placas paralelas in-plane. Neste trabalho é descrito o desenvolvimento de um acelerómetro em malha aberta com uma sensibilidade de 0.26 μs/μg e 2.7 μg /√Hz de ruído. As estruturas MEMS utilizadas na sua implementação foram fabricadas num processo de microfabrico SOI comercial. As principais desvantagens desta abordagem são pequena gama dinâmica devido à não-linearidade da resposta. Neste trabalho foram exploradas abordagens em malha fechada, usando feedback electrostático, de modo a ultrapassar estas limitações, tendo sido alcançado um aumento da gama dinâmica para 109 dB, com grandes melhoria na linearidade. Uma nova aplicação para o tempo de pull-in foi também desenvolvida: medição de viscosidade de gases. Uma vez que as microstruturas utilizadas são operadas a baixas frequências, o amortecimento é proporcional à viscosidade. O estudo efectuado mostra que o tempo de pull-in é muito sensível ao amortecimento e portanto a variações de viscosidade. Os resultados experimentais obtidos com gases e misturas de gases com viscosidades entre 8 μP e 18 μP mostraram uma sensibilidade de 2 ms/μP, confirmando o potencial da utilização de tempo de pull-in na medição de viscosidade.The author, Rosana Maria Alves Dias, was supported by Portuguese Foundation for Science and Technology (SFRH/BD/46030/2008)

Integrated interface electronics for capacitive MEMS inertial sensors

This thesis is composed of 13 publications and an overview of the research topic, which also summarizes the work. The research presented in this thesis concentrates on integrated circuits for the realization of interface electronics for capacitive MEMS (micro-electro-mechanical system) inertial sensors, i.e. accelerometers and gyroscopes. The research focuses on circuit techniques for capacitive detection and actuation and on high-voltage and clock generation within the sensor interface. Characteristics of capacitive accelerometers and gyroscopes and the electronic circuits for accessing the capacitive information in open- and closed-loop configurations are introduced in the thesis. One part of the experimental work, an accelerometer, is realized as a continuous-time closed-loop sensor, and is capable of achieving sub-micro-g resolution. The interface electronics is implemented in a 0.7-µm high-voltage technology. It consists of a force feedback loop, clock generation circuits, and a digitizer. Another part of the experimental work, an analog 2-axis gyroscope, is optimized not only for noise, but predominantly for low power consumption and a small chip area. The implementation includes a pseudo-continuous-time sense readout, analog continuous-time drive loop, phase-locked loop (PLL) for clock generation, and high-voltage circuits for electrostatic excitation and high-voltage detection. The interface is implemented in a 0.35-µm high-voltage technology within an active area of 2.5 mm². The gyroscope achieves a spot noise of 0.015 °/s/√H̅z̅ for the x-axis and 0.041 °/s/√H̅z̅ for the y-axis. Coherent demodulation and discrete-time signal processing are often an important part of the sensors and also typical examples that require clock signals. Thus, clock generation within the sensor interfaces is also reviewed. The related experimental work includes two integrated charge pump PLLs, which are optimized for compact realization but also considered with regard to their noise performance. Finally, this thesis discusses fully integrated high-voltage generation, which allows a higher electrostatic force and signal current in capacitive sensors. Open- and closed-loop Dickson charge pumps and high-voltage amplifiers have been realized fully on-chip, with the focus being on optimizing the chip area and on generating precise spurious free high-voltage signals up to 27 V

System design of a low-power three-axis underdamped MEMS accelerometer with simultaneous electrostatic damping control

Recently, consumer electronics industry has known a spectacular growth that would have not been possible without pushing the integration barrier further and further. Micro Electro Mechanical Systems (MEMS) inertial sensors (e.g. accelerometers, gyroscopes) provide high performance, low power, low die cost solutions and are, nowadays, embedded in most consumer applications. In addition, the sensors fusion has become a new trend and combo sensors are gaining growing popularity since the co-integration of a three-axis MEMS accelerometer and a three-axis MEMS gyroscope provides complete navigation information. The resulting device is an Inertial measurement unit (IMU) able to sense multiple Degrees of Freedom (DoF). Nevertheless, the performances of the accelerometers and the gyroscopes are conditioned by the MEMS cavity pressure: the accelerometer is usually a damped system functioning under an atmospheric pressure while the gyroscope is a highly resonant system. Thus, to conceive a combo sensor, aunique low cavity pressure is required. The integration of both transducers within the same low pressure cavity necessitates a method to control and reduce the ringing phenomena by increasing the damping factor of the MEMS accelerometer. Consequently, the aim of the thesis is the design of an analog front-end interface able to sense and control an underdamped three-axis MEMSaccelerometer. This work proposes a novel closed-loop accelerometer interface achieving low power consumption The design challenge consists in finding a trade-off between the sampling frequency, the settling time and the circuit complexity since the sensor excitation plates are multiplexed between the measurement and the damping phases. In this context, a patenteddamping sequence (simultaneous damping) has been conceived to improve the damping efficiency over the state of the art approach performances (successive damping). To investigate the feasibility of the novel electrostatic damping control architecture, several mathematical models have been developed and the settling time method is used to assess the damping efficiency. Moreover, a new method that uses the multirate signal processing theory and allows the system stability study has been developed. This very method is used to conclude on the loop stability for a certain sampling frequency and loop gain value. Next, a 0.18μm CMOS implementation of the entire accelerometer signal chain is designed and validated

Integrated reference circuits for low-power capacitive sensor interfaces

This thesis consists of nine publications and an overview of the research topic, which also summarizes the work. The research described in this thesis concentrates on the design of low-power sensor interfaces for capacitive 3-axis micro-accelerometers. The primary goal throughout the thesis is to optimize power dissipation. Because the author made the main contribution to the design of the reference and power management circuits required, the overview part is dominated by the following research topics: current, voltage, and temperature references, frequency references, and voltage regulators. After an introduction to capacitive micro-accelerometers, the work describes the typical integrated readout electronics of a capacitive sensor on the functional level. The readout electronics can be divided into four different functional parts, namely the sensor readout itself, signal post-processing, references, and power management. Before the focus is shifted to the references and further to power management, different ways to realize the sensor readout are briefly discussed. Both current and voltage references are required in most analog and mixed-signal systems. A bandgap voltage reference, which inherently uses at least one current reference, is practical for the generation of an accurate reference voltage. Very similar circuit techniques can be exploited when implementing a temperature reference, the need for which in the sensor readout may be justified by the temperature compensation, for example. The work introduces non-linear frequency references, namely ring and relaxation oscillators, which are very suitable for the generation of the relatively low-frequency clock signals typically needed in the sensor interfaces. Such oscillators suffer from poor jitter and phase noise performance, the quantities of which also deserve discussion in this thesis. Finally, the regulation of the supply voltage using linear regulators is considered. In addition to extending the battery life by providing a low quiescent current, the regulator must be able to supply very low load currents and operate without off-chip capacitors