Applications of Emerging Memory in Modern Computer Systems: Storage and Acceleration

In recent year, heterogeneous architecture emerges as a promising technology to conquer the constraints in homogeneous multi-core architecture, such as supply voltage scaling, off-chip communication bandwidth, and application parallelism. Various forms of accelerators, e.g., GPU and ASIC, have been extensively studied for their tradeoffs between computation efficiency and adaptivity. But with the increasing demand of the capacity and the technology scaling, accelerators also face limitations on cost-efficiency due to the use of traditional memory technologies and architecture design. Emerging memory has become a promising memory technology to inspire some new designs by replacing traditional memory technologies in modern computer system. In this dissertation, I will first summarize my research on the application of Spin-transfer torque random access memory (STT-RAM) in GPU memory hierarchy, which offers simple cell structure and non-volatility to enable much smaller cell area than SRAM and almost zero standby power. Then I will introduce my research about memristor implementation as the computation component in the neuromorphic computing accelerator, which has the similarity between the programmable resistance state of memristors and the variable synaptic strengths of biological synapses to simplify the realization of neural network model. At last, a dedicated interconnection network design for multicore neuromorphic computing system will be presented to reduce the prominent average latency and power consumption brought by NoC in a large size neuromorphic computing system

A Lightweight, Compiler-Assisted Register File Cache for GPGPU

Modern GPUs require an enormous register file (RF) to store the context of thousands of active threads. It consumes considerable energy and contains multiple large banks to provide enough throughput. Thus, a RF caching mechanism can significantly improve the performance and energy consumption of the GPUs by avoiding reads from the large banks that consume significant energy and may cause port conflicts. This paper introduces an energy-efficient RF caching mechanism called Malekeh that repurposes an existing component in GPUs' RF to operate as a cache in addition to its original functionality. In this way, Malekeh minimizes the overhead of adding a RF cache to GPUs. Besides, Malekeh leverages an issue scheduling policy that utilizes the reuse distance of the values in the RF cache and is controlled by a dynamic algorithm. The goal is to adapt the issue policy to the runtime program characteristics to maximize the GPU's performance and the hit ratio of the RF cache. The reuse distance is approximated by the compiler using profiling and is used at run time by the proposed caching scheme. We show that Malekeh reduces the number of reads to the RF banks by 46.4% and the dynamic energy of the RF by 28.3%. Besides, it improves performance by 6.1% while adding only 2KB of extra storage per core to the baseline RF of 256KB, which represents a negligible overhead of 0.78%

Design and Analysis of Soft-Error Resilience Mechanisms for GPU Register File

Modern graphics processing units (GPUs) are using increasingly larger register file (RF) which occupies a large fraction of GPU core area and is very frequently access ed. This makes RF vulnerable to soft-errors (SE). In this paper, we present two techniques for improving SE resilience of GPU RF . First, we propose compressing the RF values for reducing the number of vulnerable bits. We leverage value similarity and the presence of narrow-width values to perform compression at warp or thread-level, respectively. Second, we propose sel ective hardening to design a portion of register entry with SE immun e circuits. By collectively using these techniques, higher r esilience can be provided with lower overhead. Without hardening, our warp and thread-level compression techniques bring 47.0% and 40.8% reduction in SE vulnerability, respectively

LTRF: Enabling High-Capacity Register Files for GPUs via Hardware/Software Cooperative Register Prefetching

Graphics Processing Units (GPUs) employ large register files to accommodate all active threads and accelerate context switching. Unfortunately, register files are a scalability bottleneck for future GPUs due to long access latency, high power consumption, and large silicon area provisioning. Prior work proposes hierarchical register file, to reduce the register file power consumption by caching registers in a smaller register file cache. Unfortunately, this approach does not improve register access latency due to the low hit rate in the register file cache. In this paper, we propose the Latency-Tolerant Register File (LTRF) architecture to achieve low latency in a two-level hierarchical structure while keeping power consumption low. We observe that compile-time interval analysis enables us to divide GPU program execution into intervals with an accurate estimate of a warp’s aggregate register working-set within each interval. The key idea of LTRF is to prefetch the estimated register working-set from the main register file to the register file cache under software control, at the beginning of each interval, and overlap the prefetch latency with the execution of other warps. Our experimental results show that LTRF enables high-capacity yet long-latency main GPU register files, paving the way for various optimizations. As an example optimization, we implement the main register file with emerging high-density high-latency memory technologies, enabling 8× larger capacity and improving overall GPU performance by 31% while reducing register file power consumption by 46%

ARCHITECTING EMERGING MEMORY TECHNOLOGIES FOR ENERGY-EFFICIENT COMPUTING IN MODERN PROCESSORS

Ph.DDOCTOR OF PHILOSOPH

High Performance On-Chip Interconnects Design for Future Many-Core Architectures

Switch-based Network-on-Chip (NoC) is a widely accepted inter-core communication infrastructure for Chip Multiprocessors (CMPs). With the continued advance of CMOS technology, the number of cores on a single chip keeps increasing at a rapid pace. It is highly expected that many-core architectures with more than hundreds of processor cores will be commercialized in the near future. In such a large scale CMP system, NoC overheads are more dominant than computation power in determining overall system performance. Also, for modern computational workloads requiring abundant thread level parallelism (TLP), NoC design for highly-parallel, many-core accelerators such as General Purpose Graphics Processing Units (GPGPUs) is of primary importance in harnessing the potential of massive thread- and data-level parallelism. In these contexts, it is critical that NoC provides both low latency and high bandwidth within limited on-chip power and area budgets. In this dissertation, we explore various design issues inherent in future many-core architectures, CMPs and GPGPUs, to achieve both high performance and power efficiency. First, we deal with issues in using a promising next generation memory technology, Spin-Transfer Torque Magnetic RAM (STT-MRAM), for NoC input buffers in CMPs. Using a high density and low leakage memory offers more buffer capacities with the same die footprint, thus helping increase network throughput in NoC routers. However, its long latency and high power consumption in write operations still need to be addressed. Thus, we propose a hybrid design of input buffers using both SRAM and STT-MRAM to hide the long write latency efficiently. Considering that simple data migration in the hybrid buffer consumes more dynamic power compared to SRAM, we provide a lazy migration scheme that reduces the dynamic power consumption of the hybrid buffer. Second, we propose the first NoC router design that uses only STT-MRAM, providing much larger buffer space with less power consumption, while preserving data integrity. To hide the multicycle writes, we employ a multibank STT-MRAM buffer, a virtual channel with multiple banks where every incoming flit is seamlessly pipelined to each bank alternately. Our STT-MRAM design has aggressively reduced the retention time, resulting in a significant reduction in the latency and power overheads of write operations. To ensure data integrity against inadvertent bit flips from the thermal fluctuation during the given retention time, we propose a cost-efficient dynamic buffer refresh scheme combined with Error Correcting Codes (ECC) to detect and correct data corruption. Third, we present schemes for bandwidth-efficient on-chip interconnects in GPGPUs. GPGPUs place a heavy demand on the on-chip interconnect between the many cores and a few memory controllers (MCs). Thus, traffic is highly asymmetric, impacting on-chip resource utilization and system performance. Here, we analyze the communication demands of typical GPGPU applications, and propose efficient NoC designs to meet those demands

Circuit and Architecture Co-Design of STT-RAM for High Performance and Low Energy

Spin-Transfer Torque Random Access Memory (STT-RAM) has been proved a promising emerging nonvolatile memory technology suitable for many applications such as cache mem- ory of CPU. Compared with other conventional memory technology, STT-RAM offers many attractive features such as nonvolatility, fast random access speed and extreme low leakage power. However, STT-RAM is still facing many challenges. First of all, programming STT-RAM is a stochastic process due to random thermal fluctuations, so the write errors are hard to avoid. Secondly, the existing STT-RAM cell designs can be used for only single-port accesses, which limits the memory access bandwidth and constraints the system performance. Finally, while other memory technology supports multi-level cell (MLC) design to boost the storage density, adopting MLC to STT-RAM brings many disadvantages such as requirement for large transistor and low access speed. In this work, we proposed solutions on both circuit and architecture level to address these challenges. For the write error issues, we proposed two probabilistic methods, namely write-verify- rewrite with adaptive period (WRAP) and verify-one-while-writing (VOW), for performance improvement and write failure reduction. For dual-port solution, we propose the design methods to support dual-port accesses for STT-RAM. The area increment by introducing an additional port is reduced by leveraging the shared source-line structure. Detailed analysis on the performance/reliability degrada- tion caused by dual-port accesses is performed, and the corresponding design optimization is provided. To unleash the potential of MLC STT-RAM cache, we proposed a new design through a cross-layer co-optimization. The memory cell structure integrated the reversed stacking of magnetic junction tunneling (MTJ) for a more balanced device and design trade-off. In architecture development, we presented an adaptive mode switching mechanism: based on application’s memory access behavior, the MLC STT-RAM cache can dynamically change between low latency SLC mode and high capacity MLC mode. Finally, we present a 4Kb test chip design which can support different types and sizes of MTJs. A configurable sensing solution is used in the test chip so that it can support wide range of MTJ resistance. Such test chip design can help to evaluate various type of MTJs in the future

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Error Characterization and Correction Techniques for Reliable STT-RAM Designs

The concerns on the continuous scaling of mainstream memory technologies have motivated tremendous investment to emerging memories. Being a promising candidate, spin-transfer torque random access memory (STT-RAM) offers nanosecond access time comparable to SRAM, high integration density close to DRAM, non-volatility as Flash memory, and good scalability. It is well positioned as the replacement of SRAM and DRAM for on-chip cache and main memory applications. However, reliability issue continues being one of the major challenges in STT-RAM memory designs due to the process variations and unique thermal fluctuations, i.e., the stochastic resistance switching property of magnetic devices. In this dissertation, I decoupled the reliability issues as following three-folds: First, the characterization of STT-RAM operation errors often require expensive Monte-Carlo runs with hybrid magnetic-CMOS simulation steps, making it impracticable for architects and system designs; Second, the state of the art does not have sufficiently understanding on the unique reliability issue of STT-RAM, and conventional error correction codes (ECCs) cannot efficiently handle such errors; Third, while the information density of STT-RAM can be boosted by multi-level cell (MLC) design, the more prominent reliability concerns and the complicated access mechanism greatly limit its applications in memory subsystems. Thus, I present a novel through solution set to both characterize and tackle the above reliability challenges in STT-RAM designs. In the first part of the dissertation, I introduce a new characterization method that can accurately and efficiently capture the multi-variable design metrics of STT-RAM cells; Second, a novel ECC scheme, namely, content-dependent ECC (CD-ECC), is developed to combat the characterized asymmetric errors of STT-RAM at 0->1 and 1->0 bit flipping's; Third, I present a circuit-architecture design, namely state-restricted multi-level cell (SR-MLC) STT-RAM design, which simultaneously achieves high information density, good storage reliability and fast write speed, making MLC STT-RAM accessible for system designers under current technology node. Finally, I conclude that efficient robust (or ECC) designs for STT-RAM require a deep holistic understanding on three different levels-device, circuit and architecture. Innovative ECC schemes and their architectural applications, still deserve serious research and investigation in the near future