A study of Radiation-Tolerant Voltage-Controlled Oscillators designs in 65 nm bulk and 28 nm FDSOI CMOS technologies

Phase-locked loop (PLL) systems are widely employed in integrated circuits for space analog devices and communications systems that operate in radiation environments, where significant perturbations, especially in terms of phase noise, can be generated due to radiation particles. Among all the blocks that form a PLL system, previous research suggests the voltage-controlled oscillator (VCO) is one of the most critical components in terms of radiation tolerance and electric performance. Ring oscillators (ROs) and LC-tank VCOs have been commonly employed in high-performance PLLs. Nevertheless, both structures have drawbacks including a limited tuning range, high sensitivity to phase noise, limited radiation tolerance, and large design areas. In order to fulfill these high-performance requirements, a current-model logic (CML) based RO-VCO is presented as a possible solution capable of reducing the limitations of the commonly used structures and exploiting their advantages. The proposed hybrid VCO model includes passive components in its design which are the key parameters that define oscillation frequency of this structure. This tunable oscillator has been designed and tested in 65nm Bulk and 28 nm Fully depleted silicon-on-insulator (FDSOI) CMOS technologies The 65nm testchip was designed to compare the behavior of the proposed CML VCO with a current-starved RO and a radiation hardened by design (RHBD) LC-tank VCO in terms of tuning range, phase noise, Single event effect (SEE) sensitivity and design area. Simulations were carried out by applying a double exponential current pulse into different sensitive nodes of the three VCOs. In addition, SEE tests were conducted using pulsed laser experiments. Simulation and test results show that a CML VCO can effectively overcome the limitations presented by a RO-VCO and LC-tank VCO, achieving a wide range of tuning, and low sensitivity to noise and SEEs without the need for a large cross-section. Further studies of the proposed CML VCO were done on 28nm FDSOI in order to reduce the leakage current and increase the switching speed. the same current-starved VCO and CML VCO were implemented on this testchip, and simulations were performed by injecting a double exponential current pulse energy into the previously defined sensitive nodes. The results show SEE sensitivity improvement without narrowing the tuning range or affecting the phase noise response

A novel tuning technique for distributed voltage controlled oscillators

A novel current-steering delay-balanced tuning technique for distributed voltage controlled oscillators (DVCO) is demonstrated. This tuning technique is used to design a DVCO operating at 10 GHz in a 0.35 μm CMOS technology. The DVCO is continuously tunable between 9.9 and 10.3 GHz. Special attention is paid to the layout issues for the high frequency design

Design of a 3 GHz fine resolution LC DCO

In this thesis, the design of a fine resolution LC digitally controlled oscillator (DCO) is introduced. Two NMOS varactor banks are used to achieve 12 bits medium and fine frequency tuning. Both delta-sigma modulator and capacitive divider circuit are implemented to achieve a finer resolution and a larger dynamic range. The LC-oscillator has a coarse tuning range from 3.05 GHz to 3.85 GHz and a fine tuning range of 50MHz. It features a phase noise level of -115dBc/Hz at 1MHz frequency offset and consumes 5.4mW. Efficient simulation methodology is explored. Finally, this DCO is simulated in an All-Digital Phase Locked Loop (ADPLL) with other ideal behavior blocks implemented using Verilog-A, and the performance of the DCO is evaluated.Electrical and Computer Engineerin

Study of Single-Event Transient Effects on Analog Circuits

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

USING VCOS AS RF MEASURING DEVICES

This thesis presents an alternative way to test the amount of energy harvested by an antenna. Accurately measuring the amount of energy an antenna harvests is a challenge. The test equipment that touches the antenna can greatly affect the results of the test. Using a VCO to measure an antenna's harvested power enables accuracy and prevents the need to attach testing equipment. The VCO is powered by a harvesting antenna. The frequency produced is then output to a transmitting antenna. The output frequency of the VCO can easily be determined and then used to look up the power from the characteristics of the VCO. A background study of types of VCOs, and VCOs available on the market will also be included in this thesis. Finally the experiment setups and results will be presented

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Ultra Low Power Circuits for Internet of Things and Deep Learning Accelerator Design with In-Memory Computing

Collecting data from environment and converting gathered data into information is the key idea of Internet of Things (IoT). Miniaturized sensing devices enable the idea for many applications including health monitoring, industrial sensing, and so on. Sensing devices typically have small form factor and thus, low battery capacity, but at the same time, require long life time for continuous monitoring and least frequent battery replacement. This thesis introduces three analog circuit design techniques featuring ultra-low power consumption for such requirements: (1) An ultra-low power resistor-less current reference circuit, (2) A 110nW resistive frequency locked on-chip oscillator as a timing reference, (3) A resonant current-mode wireless power receiver and battery charger for implantable systems. Raw data can be efficiently transformed into useful information using deep learning. However deep learning requires tremendous amount of computation by its nature, and thus, an energy efficient deep learning hardware is highly demanded to fully utilize this algorithm in various applications. This thesis also presents a pulse-width based computation concept which utilizes in-memory computing of SRAM.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/144173/1/myungjun_1.pd