Efficient scrub mechanisms for error-prone emerging memories

Journal ArticleMany memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior re-search has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it be-fore the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems

Reliability-aware memory design using advanced reconfiguration mechanisms

Fast and Complex Data Memory systems has become a necessity in modern computational units in today's integrated circuits. These memory systems are integrated in form of large embedded memory for data manipulation and storage. This goal has been achieved by the aggressive scaling of transistor dimensions to few nanometer (nm) sizes, though; such a progress comes with a drawback, making it critical to obtain high yields of the chips. Process variability, due to manufacturing imperfections, along with temporal aging, mainly induced by higher electric fields and temperature, are two of the more significant threats that can no longer be ignored in nano-scale embedded memory circuits, and can have high impact on their robustness. Static Random Access Memory (SRAM) is one of the most used embedded memories; generally implemented with the smallest device dimensions and therefore its robustness can be highly important in nanometer domain design paradigm. Their reliable operation needs to be considered and achieved both in cell and also in architectural SRAM array design. Recently, and with the approach to near/below 10nm design generations, novel non-FET devices such as Memristors are attracting high attention as a possible candidate to replace the conventional memory technologies. In spite of their favorable characteristics such as being low power and highly scalable, they also suffer with reliability challenges, such as process variability and endurance degradation, which needs to be mitigated at device and architectural level. This thesis work tackles such problem of reliability concerns in memories by utilizing advanced reconfiguration techniques. In both SRAM arrays and Memristive crossbar memories novel reconfiguration strategies are considered and analyzed, which can extend the memory lifetime. These techniques include monitoring circuits to check the reliability status of the memory units, and architectural implementations in order to reconfigure the memory system to a more reliable configuration before a fail happens.Actualmente, el diseño de sistemas de memoria en circuitos integrados busca continuamente que sean más rápidos y complejos, lo cual se ha vuelto de gran necesidad para las unidades de computación modernas. Estos sistemas de memoria están integrados en forma de memoria embebida para una mejor manipulación de los datos y de su almacenamiento. Dicho objetivo ha sido conseguido gracias al agresivo escalado de las dimensiones del transistor, el cual está llegando a las dimensiones nanométricas. Ahora bien, tal progreso ha conllevado el inconveniente de una menor fiabilidad, dado que ha sido altamente difícil obtener elevados rendimientos de los chips. La variabilidad de proceso - debido a las imperfecciones de fabricación - junto con la degradación de los dispositivos - principalmente inducido por el elevado campo eléctrico y altas temperaturas - son dos de las más relevantes amenazas que no pueden ni deben ser ignoradas por más tiempo en los circuitos embebidos de memoria, echo que puede tener un elevado impacto en su robusteza final. Static Random Access Memory (SRAM) es una de las celdas de memoria más utilizadas en la actualidad. Generalmente, estas celdas son implementadas con las menores dimensiones de dispositivos, lo que conlleva que el estudio de su robusteza es de gran relevancia en el actual paradigma de diseño en el rango nanométrico. La fiabilidad de sus operaciones necesita ser considerada y conseguida tanto a nivel de celda de memoria como en el diseño de arquitecturas complejas basadas en celdas de memoria SRAM. Actualmente, con el diseño de sistemas basados en dispositivos de 10nm, dispositivos nuevos no-FET tales como los memristores están atrayendo una elevada atención como posibles candidatos para reemplazar las actuales tecnologías de memorias convencionales. A pesar de sus características favorables, tales como el bajo consumo como la alta escabilidad, ellos también padecen de relevantes retos de fiabilidad, como son la variabilidad de proceso y la degradación de la resistencia, la cual necesita ser mitigada tanto a nivel de dispositivo como a nivel arquitectural. Con todo esto, esta tesis doctoral afronta tales problemas de fiabilidad en memorias mediante la utilización de técnicas de reconfiguración avanzada. La consideración de nuevas estrategias de reconfiguración han resultado ser validas tanto para las memorias basadas en celdas SRAM como en `memristive crossbar¿, donde se ha observado una mejora significativa del tiempo de vida en ambos casos. Estas técnicas incluyen circuitos de monitorización para comprobar la fiabilidad de las unidades de memoria, y la implementación arquitectural con el objetivo de reconfigurar los sistemas de memoria hacia una configuración mucho más fiables antes de que el fallo suced

Thermal profiling in CMOS/memristor hybrid architectures

CMOS/memristor hybrid architectures combine conventional CMOS processing elements with thin-film memristor-based crossbar circuits for high-density reconfigurable systems. These architectures have received an explosive growth in research over the past few years due to the first practical demonstration of a thin-film memristor in 2008. The reliability and lifetimes of both the CMOS and memristor partitions of these architectures are severely affected by temperature variations across the chip. Therefore, it is expected that dynamic thermal management (DTM) mechanisms will be needed to improve their reliability and lifetime. This thesis explores one aspect of DTM--thermal profiling--in a CMOS/memristor memory architecture. A temperature sensing resistive random access memory (TSRRAM) was designed. Temperature information is extracted from the TSRRAM by measuring the write time of thin-film memristors. Active and passive sensing mechanisms are also introduced as means for DTM algorithms to determine the thermal profile of the chip. Crosstherm, a simulation framework, was developed to analyze the effects of temperature variations in CMOS/memristor architectures. The TSRRAM design was simulated using the Crosstherm framework for four CMOS processor benchmarks. Passive sensing produced a mean absolute sensor error across all benchmarks of 2.14 K. The size of the DTM unit\u27s memory was also shown to have a significant impact on the accuracy of extracted thermal data during passive sensing. Active sensing was also demonstrated to show the effect of dynamic adjustment of sensor resolution on the accuracy of hotspot temperature estimations

A Multi-level Multi-Modular Flying Capacitor Voltage Source Converter for High Power Applications

Two vital and dynamically changing issues are arising in the electric grid - an increase in electrical power demand, and subsequent reduction in power quality. Power electronics based solutions such as the Static Synchronous Compensator are increasingly deployed to mitigate power quality issues while High Voltage DC Transmission converters are currently installed to support the existing grid transmission capacity. Both applications require high power and high voltage power converters using switching devices with limited voltage ratings. The advent of Modular Multilevel Converters (MMC) is one of the recent responses to this need. These use half or full H-bridge circuits stacked up to form a chain, and hence can withstand high voltages using lower-rated switching devices. This thesis introduces a new member into the MMC family, i.e the Modular Multi-level Flying Capacitor Converter (MMFCC). This uses a three-level flying capacitor full-bridge circuit as a sub-module and offers features of modularity, scalability and fault tolerance. The choice of FC topology in place of the simple H-bridge stems from the FC’s ability to offer two extra voltage levels in the sub-module output and hence more degrees of freedom per module in controlling the voltage waveform. A three-level full-bridge FC sub-module uses three capacitors - an outer one for supporting the sub-module voltage, and two inner floating ones with half of the outer one’s capacitance and voltage rating. This use of slightly more complex FC sub-modules gives the benefits of a modular structure but without using twice as many sub-modules with their associated capacitors for the same total voltage. The thesis presents the principles of this topology, switching states redundancies and a method for capacitor voltage balancing. Also discussed are: the configuration of MMCC including the MMFCC in Single-Star Bridge-Cell (SSBC) or Single-Delta Bridge-Cell (SDBC) for FACTS and Battery Energy Storage System (BESS) applications; and Double-Star Chopper-Cell (DSCC) or Double-Star Bridge-Cell (DSBC) for HVDC systems. A novel overlapping hexagon pulse width modulation scheme is introduced and discussed for switching control of the MMFCC. This uses multiple hexagons all centred on one point, the same in number as the cascaded FC sub-modules, which are phase displaced relative to each other. The approach simplifies the modulation algorithm and brings flexibility in shaping the output voltage waveforms for different applications. An MMFCC experimental rig was designed and built in-house to validate some of the simulation results obtained for the modulation of this new topology. Details of the rig as well as results captured are discussed

Doctor of Philosophy in Computing

dissertatio

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Co-design of Security Aware Power System Distribution Architecture as Cyber Physical System

The modern smart grid would involve deep integration between measurement nodes, communication systems, artificial intelligence, power electronics and distributed resources. On one hand, this type of integration can dramatically improve the grid performance and efficiency, but on the other, it can also introduce new types of vulnerabilities to the grid. To obtain the best performance, while minimizing the risk of vulnerabilities, the physical power system must be designed as a security aware system. In this dissertation, an interoperability and communication framework for microgrid control and Cyber Physical system enhancements is designed and implemented taking into account cyber and physical security aspects. The proposed data-centric interoperability layer provides a common data bus and a resilient control network for seamless integration of distributed energy resources. In addition, a synchronized measurement network and advanced metering infrastructure were developed to provide real-time monitoring for active distribution networks. A hybrid hardware/software testbed environment was developed to represent the smart grid as a cyber-physical system through hardware and software in the loop simulation methods. In addition it provides a flexible interface for remote integration and experimentation of attack scenarios. The work in this dissertation utilizes communication technologies to enhance the performance of the DC microgrids and distribution networks by extending the application of the GPS synchronization to the DC Networks. GPS synchronization allows the operation of distributed DC-DC converters as an interleaved converters system. Along with the GPS synchronization, carrier extraction synchronization technique was developed to improve the system’s security and reliability in the case of GPS signal spoofing or jamming. To improve the integration of the microgrid with the utility system, new synchronization and islanding detection algorithms were developed. The developed algorithms overcome the problem of SCADA and PMU based islanding detection methods such as communication failure and frequency stability. In addition, a real-time energy management system with online optimization was developed to manage the energy resources within the microgrid. The security and privacy were also addressed in both the cyber and physical levels. For the physical design, two techniques were developed to address the physical privacy issues by changing the current and electromagnetic signature. For the cyber level, a security mechanism for IEC 61850 GOOSE messages was developed to address the security shortcomings in the standard