808 research outputs found

    A wideband linear tunable CDTA and its application in field programmable analogue array

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    This document is the Accepted Manuscript version of the following article: Hu, Z., Wang, C., Sun, J. et al. ‘A wideband linear tunable CDTA and its application in field programmable analogue array’, Analog Integrated Circuits and Signal Processing, Vol. 88 (3): 465-483, September 2016. Under embargo. Embargo end date: 6 June 2017. The final publication is available at Springer via https://link.springer.com/article/10.1007%2Fs10470-016-0772-7 © Springer Science+Business Media New York 2016In this paper, a NMOS-based wideband low power and linear tunable transconductance current differencing transconductance amplifier (CDTA) is presented. Based on the NMOS CDTA, a novel simple and easily reconfigurable configurable analogue block (CAB) is designed. Moreover, using the novel CAB, a simple and versatile butterfly-shaped FPAA structure is introduced. The FPAA consists of six identical CABs, and it could realize six order current-mode low pass filter, second order current-mode universal filter, current-mode quadrature oscillator, current-mode multi-phase oscillator and current-mode multiplier for analog signal processing. The Cadence IC Design Tools 5.1.41 post-layout simulation and measurement results are included to confirm the theory.Peer reviewedFinal Accepted Versio

    A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design

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    This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors the proposed circuit is only composed of a single two n-channel MOSFET-based inverting voltage buffer, three passive components, and one NMOS-based voltage-controlled resistor, which is with advantage used to electronically control the pole frequency of the filter in range 103 kHz to 18.3 MHz. The proposed filter is also very suitable for low-voltage operation, since between its supply rails it uses only two MOSFETs. In the paper the effect of load is investigated. In addition, in order to suppress the effect of non-zero output resistance of the inverting voltage buffer, two compensation techniques are also introduced. The theoretical results are verified by SPICE simulations using PTM 90 nm level-7 CMOS process BSIM3v3 parameters, where +/- 0.45 V supply voltages are used. Moreover, the behavior of the proposed filter was also experimentally measured using readily available array transistors CD4007UB by Texas Instruments

    Electronically Tunable Resistorless Mixed Mode Biquad Filters

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    This paper presents a new realization of elecÂŹtronically tunable mixed mode (including transadmittance- and voltage-modes) biquad filter with single input, three outputs or three inputs, single output using voltage differ-encing transconductance amplifier (VDTA), a recently introduced active element. It can simultaneously realize standard filtering signals: low-pass, band-pass and high-pass or by selecting input terminals, it can realize all five different filtering signals: low-pass, band-pass, high-pass, band-stop and all-pass. The proposed filter circuit offers the following attractive feature: no requirement of invert-ing type input signal which is require no addition circuit, critical component matching conditions are not required in the design, the circuit parameters ω0 and Q can be set orthogonally or independently through adjusting the bias currents of the VDTAs, the proposed circuit employs two active and minimum numbers of passive components. Fur-thermore, this filter was investigated from the point of view of limited frequency range, stability conditions, effects of parasitic elements and effects of non-ideal and sensitivity. Thus, taking these effects and conditions into consideraÂŹtion, working conditions and boundaries of this filter are determined. We also performed Monte Carlo, THD and noise analyses. Simulation results are given to confirm theoretical analyses

    Low-Voltage High-Linearity Wideband Current Differencing Transconductance Amplifier and Its Application on Current-Mode Active Filter

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    A low-voltage high-linearity wideband current differencing transconductance ampliïŹer (CDTA) is presented in this paper. The CDTA consists of a current differencing circuit and a cross-coupling transconductance circuit. The PSPICE simulations of the proposed CDTA show a good performance: -3dB frequency bandwith is about 900 MHz, low power consumption is 2.48 mW, input current linear range is ±100 ”A and low current-input resistance is less than 20 ℩, high current-output resistance is more than 3 M℩. PSpice simulations for a current-mode universal filter and a proposed high-order filter are also conducted, and the results verify the validity of the proposed CDTA

    Realization of Low-Voltage Modified CBTA and Design of Cascadable Current-Mode All-Pass Filter

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    In this paper, a low voltage modified current backward transconductance amplifier (MCBTA) and a novel first-order current-mode (CM) all-pass filter are presented. The MCBTA can operate with ±0.9 V supply voltage and the total power consumption of MCBTA is 1.27 mW. The presented all-pass filter employs single MCBTA, a grounded resistor and a grounded capacitor. The circuit possesses low input and high output impedances which make it ideal for current-mode systems. The presented all-pass filter circuit can be made electronically tunable due to the bias current of the MCBTA. Non-ideal study along with simulation results are given for validation purpose. Further, an nth-order cascadable all-pass filter is also presented. It uses n MCBTAs, n grounded resistors and n grounded capacitors. The performance of the proposed circuits is demonstrated by using PSPICE simulations based on the 0.18 ”m TSMC level-7 CMOS technology parameters

    Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs

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    Current-mode (CM) and voltage-mode (VM) multiphase sinusoidal oscillator (MSO) structures using current backward transconductance amplifier (CBTA) are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd) equally spaced in phase. n+1 CBTAs, n grounded capacitors and a grounded resistor are used for nth-state oscillator. The oscillation frequency can be independently controlled through transconductance (gm) of the CBTAs which are adjustable via their bias currents. The effects caused by the non-ideality of the CBTA on the oscillation frequency and condition have been analyzed. The performance of the proposed circuits is demonstrated on third-stage and fifth-stage MSOs by using PSPICE simulations based on the 0.25 ”m TSMC level-7 CMOS technology parameters

    Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

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    The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends

    Circuits for Analog Signal Processing Employing Unconventional Active Elements

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    DisertačnĂ­ prĂĄce se zabĂœvĂĄ zavĂĄděnĂ­m novĂœch struktur modernĂ­ch aktivnĂ­ch prvkĆŻ pracujĂ­cĂ­ch v napěƄovĂ©m, proudovĂ©m a smĂ­ĆĄenĂ©m reĆŸimu. Funkčnost a chovĂĄnĂ­ těchto prvkĆŻ byly ověƙeny prostƙednictvĂ­m SPICE simulacĂ­. V tĂ©to prĂĄci je zahrnuta ƙada simulacĂ­, kterĂ© dokazujĂ­ pƙesnost a dobrĂ© vlastnosti těchto prvkĆŻ, pƙičemĆŸ velkĂœ dĆŻraz byl kladen na to, aby tyto prvky byly schopny pracovat pƙi nĂ­zkĂ©m napĂĄjecĂ­m napětĂ­, jelikoĆŸ poptĂĄvka po pƙenosnĂœch elektronickĂœch zaƙízenĂ­ch a implantabilnĂ­ch zdravotnickĂœch pƙístrojĂ­ch stĂĄle roste. Tyto pƙístroje jsou napĂĄjeny bateriemi a k tomu, aby byla prodlouĆŸena jejich ĆŸivotnost, trend navrhovĂĄnĂ­ analogovĂœch obvodĆŻ směƙuje k stĂĄle větĆĄĂ­mu sniĆŸovĂĄnĂ­ spotƙeby a napĂĄjecĂ­ho napětĂ­. HlavnĂ­m pƙínosem tĂ©to prĂĄce je nĂĄvrh novĂœch CMOS struktur: CCII (Current Conveyor Second Generation) na zĂĄkladě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na zĂĄkladě FG, transkonduktor na zĂĄkladě novĂ© techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na zĂĄkladě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na zĂĄkladě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na zĂĄkladě BD. DĂĄle je uvedeno několik zajĂ­mavĂœch aplikacĂ­ uĆŸĂ­vajĂ­cĂ­ch vĂœĆĄe jmenovanĂ© prvky. ZĂ­skanĂ© vĂœsledky simulacĂ­ odpovĂ­dajĂ­ teoretickĂœm pƙedpokladĆŻm.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.

    Low Voltage Low Power Analogue Circuits Design

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    DisertačnĂ­ prĂĄce je zaměƙena na vĂœzkum nejbÄ›ĆŸnějĆĄĂ­ch metod, kterĂ© se vyuĆŸĂ­vajĂ­ pƙi nĂĄvrhu analogovĂœch obvodĆŻ s vyuĆŸitĂ­ nĂ­zkonapěƄovĂœch (LV) a nĂ­zkopƙíkonovĂœch (LP) struktur. Tyto LV LP obvody mohou bĂœt vytvoƙeny dĂ­ky vyspělĂœm technologiĂ­m nebo takĂ© vyuĆŸitĂ­m pokročilĂœch technik nĂĄvrhu. DisertačnĂ­ prĂĄce se zabĂœvĂĄ prĂĄvě pokročilĂœmi technikami nĂĄvrhu, pƙedevĆĄĂ­m pak nekonvenčnĂ­mi. Mezi tyto techniky patƙí vyuĆŸitĂ­ prvkĆŻ s ƙízenĂœm substrĂĄtem (bulk-driven - BD), s plovoucĂ­m hradlem (floating-gate - FG), s kvazi plovoucĂ­m hradlem (quasi-floating-gate - QFG), s ƙízenĂœm substrĂĄtem s plovoucĂ­m hradlem (bulk-driven floating-gate - BD-FG) a s ƙízenĂœm substrĂĄtem s kvazi plovoucĂ­m hradlem (quasi-floating-gate - BD-QFG). PrĂĄce je takĂ© orientovĂĄna na moĆŸnĂ© zpĆŻsoby implementace znĂĄmĂœch a modernĂ­ch aktivnĂ­ch prvkĆŻ pracujĂ­cĂ­ch v napěƄovĂ©m, proudovĂ©m nebo mix-mĂłdu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za Ășčelem potvrzenĂ­ funkčnosti a chovĂĄnĂ­ vĂœĆĄe zmĂ­něnĂœch struktur a prvkĆŻ byly vytvoƙeny pƙíklady aplikacĂ­, kterĂ© simulujĂ­ usměrƈovacĂ­ a induktančnĂ­ vlastnosti diody, dĂĄle pak filtry dolnĂ­ propusti, pĂĄsmovĂ© propusti a takĂ© univerzĂĄlnĂ­ filtry. VĆĄechny aktivnĂ­ prvky a pƙíklady aplikacĂ­ byly ověƙeny pomocĂ­ PSpice simulacĂ­ s vyuĆŸitĂ­m parametrĆŻ technologie 0,18 m TSMC CMOS. Pro ilustraci pƙesnĂ©ho a ĂșčinnĂ©ho chovĂĄnĂ­ struktur je v disertačnĂ­ prĂĄci zahrnuto velkĂ© mnoĆŸstvĂ­ simulačnĂ­ch vĂœsledkĆŻ.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

    Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

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    The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 ”W. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 ”m TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit
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