DESIGN OF A GAAS DISTRIBUTED AMPLIFIER WITH LC TRAPS BASED BROADBAND LINEARIZATION

Increasing the linearity of power amplifiers has been an important area of research because its signal integrity influences the performance of the entire transreceiver system and there are strict regulatory requirements on them. Due to the nonlinear behaviour of power amplifiers, third order intermodulation products are generated close to the desired signals and cannot be removed by filters. Increasing linearity will help bring these distortion products closer to the noise floor. However, it is not an easy task to increase linearity without trading off output power. To maintain the same level of output power generated but with higher linearity, many techniques, each with its own pros and cons, have been implemented to linearize an amplifier. Techniques involving feedback are seriously limited in terms of modulation bandwidth whereas methods such as predistortion and feedforward are very difficult to implement. This project seeks to use a simple method of placing terminations directly to the distributed amplifier (DA), making it a device level linearization technique and can be used in addition to the other system level techniques mentioned earlier. To increase linearity over a broad bandwidth of 0.5 to 3.0 GHz, this work proposes using low impedance terminations (LC traps) at the envelope frequency to the input and output of several distributed amplifiers. This research is novel since this is the first time broadband improvement in linearity has been demonstrated using the LC trap method. Two design iterations were completed (first design iteration has four variants to test the output trap while the second design iteration has three variants to test the input trap). The low impedance terminations are implemented using inductor-capacitor networks that are external to the monolithic microwave integrated circuit (MMIC). Design and layout of the DAs were carried out using Agilent’s Advanced Design System (ADS). Results show that placing the traps at the output of the DA does not truly affect the linearity of the device at lower frequencies but provide an improvement of 1.6 dB and 3.4 dB to the third-order output intercept point (OIP3) at 2.5 GHz and 3.0 GHz, respectively. With traps at the input, measurement results at -5 dBm input power, viii 1.375 V base bias (61 mA total collector current) and 10 MHz two tone spacing show a broadband improvement throughout the band (0.5 GHz to 3.0 GHz) of 3.3 dB to 7.4 dB in OIP3. Furthermore, the OIP3 is increased to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB and without causing any stability problems

High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques

Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services. The power amplifier, as the key component in the transmitter/receiver module of communication systems, affects performance of the whole system directly and receives much attention. For minimized distortion and optimum system performance, the non-constant en- velope modulation schemes used in communication systems have challenging requirements on linearity. As linearity is related to communication quality directly, several linearization techniques, such as predistortion and feedforward, are applied to power amplifier design. Predistortion method has the advantages over other techniques in relatively simple struc- ture and reasonable linearity improvement. But current predistortion circuits have quite limited performance improvement and relatively large insertion loss, which indicate the need for further research. In most of millimeter-wave amplifier design, great effort has been spent on output power or gain, while linearity is often ignored. As almost all the predistortion circuits operate at the RF frequencies, the linearized millimeter-wave com- munication circuit is still relatively immature and very challenging. This project is dedicated to solve the linearity problem faced by millimeter-wave power amplifier in communication systems, which lacks of e®ective techniques in this field. Linearity improvement with the predistortion method will be the key issue in this project and some original ideas for predistortion circuit design will be applied to millimeter-wave amplifiers. In this thesis, several predistortion circuits with novel structure were proposed, which provide a new approach for linearity improvement for millimeter-wave power am- plifier. A millimeter-wave power ampli¯er for LMDS applications built on GaAs pHEMT technology was developed to a high engineering standard, which works as the test bench for linearization. Actual operation and parasitic elements at tens of gigahertz have been taken into consideration during the design. Firstly, two novel predistorter structures based on the amplifier were proposed, one is based on an amplifier with a fixed bias circuit and the other is based on an amplifier with a nonlinear signal dependant bias circuit. These novel structures can improve the linearity while improving other metrics simultaneously, which can effectively solve the problem of insertion loss faced by the conventional structures. Besides this, an original predistortion circuit design methodology derived from frequency to signal amplitude transformation was proposed. Based on this methodology, several transfer functions were proposed and related predistortion circuits were built to linearize the power amplifier. As this methodology is quite different from the traditional approach, it can improve the linearity signifficantly while other metrics are affected slightly and has a broad prospect for application

High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques

Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services. The power amplifier, as the key component in the transmitter/receiver module of communication systems, affects performance of the whole system directly and receives much attention. For minimized distortion and optimum system performance, the non-constant en- velope modulation schemes used in communication systems have challenging requirements on linearity. As linearity is related to communication quality directly, several linearization techniques, such as predistortion and feedforward, are applied to power amplifier design. Predistortion method has the advantages over other techniques in relatively simple struc- ture and reasonable linearity improvement. But current predistortion circuits have quite limited performance improvement and relatively large insertion loss, which indicate the need for further research. In most of millimeter-wave amplifier design, great effort has been spent on output power or gain, while linearity is often ignored. As almost all the predistortion circuits operate at the RF frequencies, the linearized millimeter-wave com- munication circuit is still relatively immature and very challenging. This project is dedicated to solve the linearity problem faced by millimeter-wave power amplifier in communication systems, which lacks of e®ective techniques in this field. Linearity improvement with the predistortion method will be the key issue in this project and some original ideas for predistortion circuit design will be applied to millimeter-wave amplifiers. In this thesis, several predistortion circuits with novel structure were proposed, which provide a new approach for linearity improvement for millimeter-wave power am- plifier. A millimeter-wave power ampli¯er for LMDS applications built on GaAs pHEMT technology was developed to a high engineering standard, which works as the test bench for linearization. Actual operation and parasitic elements at tens of gigahertz have been taken into consideration during the design. Firstly, two novel predistorter structures based on the amplifier were proposed, one is based on an amplifier with a fixed bias circuit and the other is based on an amplifier with a nonlinear signal dependant bias circuit. These novel structures can improve the linearity while improving other metrics simultaneously, which can effectively solve the problem of insertion loss faced by the conventional structures. Besides this, an original predistortion circuit design methodology derived from frequency to signal amplitude transformation was proposed. Based on this methodology, several transfer functions were proposed and related predistortion circuits were built to linearize the power amplifier. As this methodology is quite different from the traditional approach, it can improve the linearity signifficantly while other metrics are affected slightly and has a broad prospect for application

SiGe-based broadband and high suppression frequency doubler ICs for wireless communications

制度:新 ; 報告番号:甲3419号 ; 学位の種類:博士(工学) ; 授与年月日:2011/9/15 ; 早大学位記番号:新574

Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

Novel design & implementation of a broadband and highly efficient doherty power amplifier

Master'sMASTER OF ENGINEERIN

Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology

The objective of this research is to study and leverage the unique properties and advantages of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to better design radio frequency (RF) and millimeter wave (mm-wave) circuit components. With recent developments, the high yield and modest cost silicon-based semiconductor technologies have proven to be attractive and cost-effective alternatives to high-performance III-V technology platforms. Between SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology and advanced RF complementary metal-oxide-semiconductor (CMOS) technology, the fundamental device-level differences between SiGe HBTs and field-effect transistors (FETs) grant SiGe HBTs clear advantages as well as unique design concerns. The work presented in this dissertation identifies several advantages and challenges on design using SiGe HBTs and provides design examples that exploit and address these unique benefits and problems with circuit component designs using SiGe HBTs.Ph.D