Static random-access memory designs based on different FinFET at lower technology node (7nm)

Title from PDF of title page viewed January 15, 2020Thesis advisor: Masud H ChowdhuryVitaIncludes bibliographical references (page 50-57)Thesis (M.S.)--School of Computing and Engineering. University of Missouri--Kansas City, 2019The Static Random-Access Memory (SRAM) has a significant performance impact on current nanoelectronics systems. To improve SRAM efficiency, it is important to utilize emerging technologies to overcome short-channel effects (SCE) of conventional CMOS. FinFET devices are promising emerging devices that can be utilized to improve the performance of SRAM designs at lower technology nodes. In this thesis, I present detail analysis of SRAM cells using different types of FinFET devices at 7nm technology. From the analysis, it can be concluded that the performance of both 6T and 8T SRAM designs are improved. 6T SRAM achieves a 44.97% improvement in the read energy compared to 8T SRAM. However, 6T SRAM write energy degraded by 3.16% compared to 8T SRAM. Read stability and write ability of SRAM cells are determined using Static Noise Margin and N- curve methods. Moreover, Monte Carlo simulations are performed on the SRAM cells to evaluate process variations. Simulations were done in HSPICE using 7nm Asymmetrical Underlap FinFET technology. The quasiplanar FinFET structure gained considerable attention because of the ease of the fabrication process [1] – [4]. Scaling of technology have degraded the performance of CMOS designs because of the short channel effects (SCEs) [5], [6]. Therefore, there has been upsurge in demand for FinFET devices for emerging market segments including artificial intelligence and cloud computing (AI) [8], [9], Internet of Things (IoT) [10] – [13] and biomedical [17] –[18] which have their own exclusive style of design. In recent years, many Underlapped FinFET devices were proposed to have better control of the SCEs in the sub-nanometer technologies [3], [4], [19] – [33]. Underlap on either side of the gate increases effective channel length as seen by the charge carriers. Consequently, the source-to-drain tunneling probability is improved. Moreover, edge direct tunneling leakage components can be reduced by controlling the electric field at the gate-drain junction . There is a limitation on the extent of underlap on drain or source sides because the ION is lower for larger underlap. Additionally, FinFET based designs have major width quantization issue. The width of a FinFET device increases only in quanta of silicon fin height (HFIN) [4]. The width quantization issue becomes critical for ratioed designs like SRAMs, where proper sizing of the transistors is essential for fault-free operation. FinFETs based on Design/Technology Co-Optimization (DTCO_F) approach can overcome these issues [38]. DTCO_F follows special design rules, which provides the specifications for the standard SRAM cells with special spacing rules and low leakages. The performances of 6T SRAM designs implemented by different FinFET devices are compared for different pull-up, pull down and pass gate transistor (PU: PD:PG) ratios to identify the best FinFET device for high speed and low power SRAM applications. Underlapped FinFETs (UF) and Design/Technology Co-Optimized FinFETs (DTCO_F) are used for the design and analysis. It is observed that with the PU: PD:PG ratios of 1:1:1 and 1:5:2 for the UF-SRAMs the read energy has degraded by 3.31% and 48.72% compared to the DTCO_F-SRAMs, respectively. However, the read energy with 2:5:2 ratio has improved by 32.71% in the UF-SRAM compared to the DTCO_F-SRAMs. The write energy with 1:1:1 configuration has improved by 642.27% in the UF-SRAM compared to the DTCO_F-SRAM. On the other hand, the write energy with 1:5:2 and 2:5:2 configurations have degraded by 86.26% and 96% in the UF-SRAMs compared to the DTCO_F-SRAMs. The stability and reliability of different SRAMs are also evaluated for 500mV supply. From the analysis, it can be concluded that Asymmetrical Underlapped FinFET is better for high-speed applications and DTCO FinFET for low power applications.Introduction -- Next generation high performance device: FinFET -- FinFET based SRAM bitcell designs -- Benchmarking of UF-SRAMs and DTCO-F-SRAMS -- Collaborative project -- Internship experience at INTEL and Marvell Semiconductor -- Conclusion and future wor

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on energy efficient techniques ranging from devices to architectures. The actual trends of device research, with fully-depleted planar devices, tri-gate geometries and gate-all-around structures, allows us to reach an increasingly higher level of performance while reducing the associated power. In addition, beyond the simple device properties enhancements, emerging devices also lead to innovations at circuit and architectural levels. In particular, devices whose properties can be tuned through additional terminals enable a fine and dynamic control of device threshold. They also enable designers to realize logic gates and to implement power-related techniques in a compact way unreachable to standard technologies. These innovations reduce the power consumption at the gate level and unlock new means of actuation in architectural solutions like adaptive voltage and frequency scaling

Vector processing-aware advanced clock-gating techniques for low-power fused multiply-add

The need for power efficiency is driving a rethink of design decisions in processor architectures. While vector processors succeeded in the high-performance market in the past, they need a retailoring for the mobile market that they are entering now. Floating-point (FP) fused multiply-add (FMA), being a functional unit with high power consumption, deserves special attention. Although clock gating is a well-known method to reduce switching power in synchronous designs, there are unexplored opportunities for its application to vector processors, especially when considering active operating mode. In this research, we comprehensively identify, propose, and evaluate the most suitable clock-gating techniques for vector FMA units (VFUs). These techniques ensure power savings without jeopardizing the timing. We evaluate the proposed techniques using both synthetic and “real-world” application-based benchmarking. Using vector masking and vector multilane-aware clock gating, we report power reductions of up to 52%, assuming active VFU operating at the peak performance. Among other findings, we observe that vector instruction-based clock-gating techniques achieve power savings for all vector FP instructions. Finally, when evaluating all techniques together, using “real-world” benchmarking, the power reductions are up to 80%. Additionally, in accordance with processor design trends, we perform this research in a fully parameterizable and automated fashion.The research leading to these results has received funding from the RoMoL ERC Advanced Grant GA 321253 and is supported in part by the European Union (FEDER funds) under contract TTIN2015-65316-P. The work of I. Ratkovic was supported by a FPU research grant from the Spanish MECD.Peer ReviewedPostprint (author's final draft

On-chip Voltage Regulator– Circuit Design and Automation

Title from PDF of title page viewed May 24, 2021Dissertation advisors: Masud H Chowdhury and Yugyung LeeVitaIncludes bibliographical references (page 106-121)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2021With the increase of density and complexity of high-performance integrated circuits and systems, including many-core chips and system-on-chip (SoC), it is becoming difficult to meet the power delivery and regulation requirements with off-chip regulators. The off-chip regulators become a less attractive choice because of the higher overheads and complexity imposed by the additional wires, pins, and pads. The increased I2R loss makes it challenging to maintain the integrity of different voltage domains under a lower supply voltage environment in the smaller technology nodes. Fully integrated on-chip voltage regulators have proven to be an effective solution to mitigate power delivery and integrity issues. Two types of regulators are considered as most promising for on-chip implementation: (i) the low-drop-out (LDO) regulator and (ii) the switched-capacitor (SC)regulator. The first part of our research mainly focused on the LDO regulator. Inspired by the recent surge of interest for cap-less voltage regulators, we presented two fully on-chip external capacitor-less low-dropout voltage regulator design. The second part of this proposal explores the complexity of designing each block of the regulator/analog circuit and proposed a design methodology for analog circuit synthesis using simulation and learning-based approach. As the complexity is increasing day-by-day in an analog circuit, hierarchical flow mostly uses for design automation. In this work, we focused mainly on Circuit-level, one of the significant steps in the flow. We presented a novel, efficient circuit synthesis flow based on simulation and learning-based optimization methods. The proposed methodology has two phases: the learning phase and the evaluation phase. Random forest, a supervised learning is used to reduce the sample points in the design space and iteration number during the learning phase. Additionally, symmetric constraints are used further to reduce the iteration number during the sizing process. We introduced a three-step circuit synthesis flow to automate the analog circuit design. We used H-spice as a simulation tool during the evaluation phase of the proposed methodology. The three most common analog circuits are chosen: single-stage differential amplifier, operational transconductance amplifier, and two-stage differential amplifier to verify the algorithm. The tool is developed in Python, and the technology we used is0.6um. We also verified the optimized result in Cadence Virtuoso.Introduction -- On-chip power delivery system -- Fundamentals of on-chip voltage regulator -- LDO design in 45NM technology -- LDO design in technology -- Analog design automation -- Proposed analog design methodology -- Energy efficient FDSOI and FINFET based power gating circuit using data retention transistor -- Conclusion and future wor

Novel High Performance Ultra Low Power Static Random Access Memories (SRAMs) Based on Next Generation Technologies

Title from PDF of title page viewed January 27, 2021Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (page 107-120)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2019Next Big Thing Is Surely Small: Nanotechnology Can Bring Revolution. Nanotechnology leads the world towards many new applications in various fields of computing, communication, defense, entertainment, medical, renewable energy and environment. These nanotechnology applications require an energy-efficient memory system to compute and process. Among all the memories, Static Random Access Memories (SRAMs) are high performance memories and occupies more than 50% of any design area. Therefore, it is critical to design high performance and energy-efficient SRAM design. Ultra low power and high speed applications require a new generation memory capable of operating at low power as well as low execution time. In this thesis, a novel 8T SRAM design is proposed that offers significantly faster access time and lowers energy consumption along with better read stability and write ability. The proposed design can be used in the conventional SRAM as well as in computationally intensive applications like neural networks and machine learning classifiers [1]-[4]. Novel 8T SRAM design offers higher energy efficiency, reliability, robustness and performance compared to the standard 6T and other existing 8T and 9T designs. It offers the advantages of a 10T SRAM without the additional area, delay and power overheads of the 10T SRAM. The proposed 8T SRAM would be able to overcome many other limitations of the conventional 6T and other 7T, 8T and 9T designs. The design employs single bitline for the write operation, therefore the number of write drivers are reduced. The defining feature of the proposed 8T SRAM is its hybrid design, which is the combination of two techniques: (i) the utilization of single-ended bitline and (ii) the utilization of virtual ground. The single-ended bitline technique ensures separate read and write operations, which eventually reduces the delay and power consumption during the read and write operations. It's independent read and write paths allow the use of the minimum sized access transistors and aid in a disturb-free read operation. The virtual ground weakens the positive feedback in the SRAM cell and improves its write ability. The virtual ground technique is also used to reduce leakages. The proposed design does not require precharging the bitlines for the read operation, which reduces the area and power overheads of the memory system by eliminating the precharging circuit. The design isolates the storage node from the read path, which improves the read stability. For reliability study, we have investigated the static noise margin (SNM) of the proposed 8T SRAM, for which, we have used two methods – (i) the traditional SNM method with the butterfly curve, (ii) the N-curve method A comparative analysis is performed between the proposed and the existing SRAM designs in terms of area, total power consumption during the read and write operations, and stability and reliability. All these advantages make the proposed 8T SRAM design an ideal candidate for the conventional and computationally intensive applications like machine learning classifier and deep learning neural network. In addition to this, there is need for next generation technologies to design SRAM memory because the conventional CMOS technology is approaching its physical and performance boundaries and as a consequence, becoming incompatible with ultra-low-power applications. Emerging devices such as Tunnel Field Effect Transistor (TFET)) and Graphene Nanoribbon Field Effect Transistor (GNRFET) devices are highly potential candidates to overcome the limitations of MOSFET because of their ability to achieve subthreshold slopes below 60 mV/decade and very low leakage currents [6]-[9]. This research also explores novel TFET and GNRFET based 6T SRAM. The thesis evaluates the standby leakage power in the Tunnel FET (TFET) based 6T SRAM cell for different pull-up, pull-down, and pass-gate transistors ratios (PU: PD: PG) and compared to 10nm FinFET based 6T SRAM designs. It is observed that the 10nm TFET based SRAMs have 107.57%, 163.64%, and 140.44% less standby leakage power compared to the 10nm FinFET based SRAMs when the PU: PD: PG ratios are 1:1:1, 1:5:2 and 2:5:2, respectively. The thesis also presents an analysis of the stability and reliability of sub-10nm TFET based 6T SRAM circuit with a reduced supply voltage of 500mV. The static noise margin (SNM), which is a critical measure of SRAM stability and reliability, is determined for hold, read and write operations of the 6T TFET SRAM cell. The robustness of the optimized TFET based 6T SRAM circuit is also evaluated at different supply voltages. Simulations were done in HSPICE and Cadence tools. From the analysis, it is clear that the main advantage of the TFET based SRAM would be the significant improvement in terms of leakage or standby power consumption. Compared to the FinFET based SRAM the standby leakage power of the T-SRAMs are 107.57%, 163.64%, and 140.44% less for 1:1:1, 1:5:2 and 2:5:2 configurations, respectively. Since leakage/standby power is the primary source of power consumption in the SRAM, and the overall system energy efficiency depends on SRAM power consumption, TFET based SRAM would lead to massive improvement of the energy efficiency of the system. Therefore, T-SRAMs are more suitable for ultra-low power applications. In addition to this, the thesis evaluates the standby leakage power of types of Graphene Nanoribbon FETs based 6T SRAM bitcell and compared to 10nm FinFET based 6T SRAM bitcell. It is observed that the 10nm MOS type GNRFET based SRAMs have 16.43 times less standby leakage power compared to the 10nm FinFET based SRAMs. The double gate SB-GNRFET based SRAM consumes 1.35E+03 times less energy compared to the 10nm FinFET based SRAM during write. However, during read double gate SB-GNRFET based SRAM consume 15 times more energy than FinFET based SRAM. It is also observed that GNRFET based SRAMs are more stable and reliable than FinFET based SRAM.Introduction -- Background -- Novel High Performance Ultra Low Power SRAM Design -- Tunnel FET Based SRAM Design -- Graphene Nanoribbon FET Based SRAM Design -- Double-gate FDSOI Based SRAM Designs -- Novel CNTFET and MEMRISTOR Based Digital Designs -- Conclusio

Asynchronous Data Processing Platforms for Energy Efficiency, Performance, and Scalability

The global technology revolution is changing the integrated circuit industry from the one driven by performance to the one driven by energy, scalability and more-balanced design goals. Without clock-related issues, asynchronous circuits enable further design tradeoffs and in operation adaptive adjustments for energy efficiency. This dissertation work presents the design methodology of the asynchronous circuit using NULL Convention Logic (NCL) and multi-threshold CMOS techniques for energy efficiency and throughput optimization in digital signal processing circuits. Parallel homogeneous and heterogeneous platforms implementing adaptive dynamic voltage scaling (DVS) based on the observation of system fullness and workload prediction are developed for balanced control of the performance and energy efficiency. Datapath control logic with NULL Cycle Reduction (NCR) and arbitration network are incorporated in the heterogeneous platform for large scale cascading. The platforms have been integrated with the data processing units using the IBM 130 nm 8RF process and fabricated using the MITLL 90 nm FDSOI process. Simulation and physical testing results show the energy efficiency advantage of asynchronous designs and the effective of the adaptive DVS mechanism in balancing the energy and performance in both platforms

CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip

Quantum computing is experiencing the transition from a scientific to an engineering field with the promise to revolutionize an extensive range of applications demanding high-performance computing. Many implementation approaches have been pursued for quantum computing systems, where currently the main streams can be identified based on superconducting, photonic, trapped-ion, and semiconductor qubits. Semiconductor-based quantum computing, specifically using CMOS technologies, is promising as it provides potential for the integration of qubits with their control and readout circuits on a single chip. This paves the way for the realization of a large-scale quantum computing system for solving practical problems. In this paper, we present an overview and future perspective of CMOS quantum computing, exploring developed semiconductor qubit structures, quantum gates, as well as control and readout circuits, with a focus on the promises and challenges of CMOS implementation

Design of variability compensation architectures of digital circuits with adaptive body bias

The most critical concern in circuit is to achieve high level of performance with very tight power constraint. As the high performance circuits moved beyond 45nm technology one of the major issues is the parameter variation i.e. deviation in process, temperature and voltage (PVT) values from nominal specifications. A key process parameter subject to variation is the transistor threshold voltage (Vth) which impacts two important parameters: frequency and leakage power. Although the degradation can be compensated by the worstcase scenario based over-design approach, it induces remarkable power and performance overhead which is undesirable in tightly constrained designs. Dynamic voltage scaling (DVS) is a more power efficient approach, however its coarse granularity implies difficulty in handling fine grained variations. These factors have contributed to the growing interest in power aware robust circuit design. We propose a variability compensation architecture with adaptive body bias, for low power applications using 28nm FDSOI technology. The basic approach is based on a dynamic prediction and prevention of possible circuit timing errors. In our proposal we are using a Canary logic technique that enables the typical-case design. The body bias generation is based on a DLL type method which uses an external reference generator and voltage controlled delay line (VCDL) to generate the forward body bias (FBB) control signals. The adaptive technique is used for dynamic detection and correction of path failures in digital designs due to PVT variations. Instead of tuning the supply voltage, the key idea of the design approach is to tune the body bias voltage bymonitoring the error rate during operation. The FBB increases operating speed with an overhead in leakage power