Low power 9-bit 500 kS/s 2-stage cyclic ADC using OTA variable bias current

This paper presents a 9-bit, 2-stage cyclic analog to digital converter (ADC) with a variable bias current control circuitry to reduce its power dissipation. Each stage outputs a three-bit digital word and the circuit requires four subcycles to perform a whole conversion. Since the accuracy required is higher in the first stage and first subcycle and decreases in subsequent cycles, the bias current of each operational transconductance amplifier is regulated depending on the subcycle of the conversion process. The resolution and sampling frequency of the converter make it suitable to be integrated with 8-bit CMOS imagers with column-parallel ADC architectures. The ADC has been designed using a 1.2 V 110 nm CMOS technology and the circuit consumes 27.9 µW at a sampling rate of 500 kS/s. At this sampling rate and at a 32 kHz input frequency, the circuit achieves 56 dB of SNDR and 9 bit ENOB. The Figure of Merit is 109 fJ/step.This work has been partially funded by Spanish Ministerio de Ciencia e Innovación (MCI), Agencia Estatal de Investigación (AEI) and European Region Development Fund (ERDF/FEDER) under grant RTI2018-097088-B-C3

A Low-Power Capacitive Transimpedance D/A Converter

This thesis proposes a new low-power and low-area DAC for single-slope ADCs used in CMOS image sensors. With increase in resolution requirements for ADCs, conventional DAC architectures suffered the limitation of either large area or high power consumption with higher resolution scaling. Thus, the proposed capacitive transimpedance amplifier DAC (CTIA DAC) could solve this by offering the resolution requirement required without taking a hit on the area or power budget. The thesis has been structured in the following manner: The first chapter introduces image sensors in general and talks about progression through different image sensors and pixel architectures that have been used through the years. It also explains the operation of a CMOS image sensor from a paper published from Sony on high-speed image sensors. The second chapter presents the importance and role of DACs in CMOS image sensors and briefly explains a few commonly used DAC architectures in image sensors. It explains the advantages and disadvantages of present architectures and leads the discussion towards the development of the proposed DAC. The third chapter gives an overview of the CTIA DAC and explains the working of the different circuit blocks that are used to implement the proposed DAC. Chapter Four explains the design approach for the blocks explained in Chapter Three. It presents the critical design choices that were made for overall performance of the DAC. Results of individual blocks and the DAC as a whole are presented and compared against other recently published DAC papers. The final chapter summarizes some key results of the design and talks about the scope for future work and improvement

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Contribution to time domain readout circuits design for multi-standard sensing system for low voltage supply and high-resolution applications

Mención Internacional en el título de doctorThis research activity has the purpose of open new possibilities in the design of capacitance-to-digital converters (CDCs) by developing a solution based on time domain conversion. This can be applied to applications related with the Internet-of-Things (IoT). These applications are present in any electronic devices where sensing is needed. To be able to reduce the area of the whole system with the required performance, micro-electromechanical systems (MEMS) sensors are used in these applications. We propose a new family of sensor readout electronics to be integrated with MEMS sensors. Within the time domain converters, Dual Slope (DS) topology is very interesting to explore a new compromise between performances, area and power consumption. DS topology has been extensively used in instrumentation. The simplicity and robustness of the blocks inside classical DS converters it is the main advantage. However, they are not efficient for applications where higher bandwidth is required. To extend the bandwidth, DS converters have been introduced into ΔΣ loops. This topology has been named as integrating converters. They increase the bandwidth compare to classical DS architecture but at the expense of higher complexity. In this work we propose the use of a new family of DS converters that keep the advantages of the classical architecture and introduce noise shaping. This way the bandwidth is increased without extra blocks. The Self-Compensated noise-shaped DS converter (the name given to the new topology) keeps the signal transfer function (STF) and the noise transfer function (NTF) of Integrating converters. However, we introduce a new arrangement in the core of the converter to do noise shaping without extra circuitry. This way the simplicity of the architecture is preserved. We propose to use the Self-Compensated DS converter as a CDC for MEMS sensors. This work makes a study of the best possible integration of the two blocks to keep the signal integrity considering the electromechanical behavior of the sensor. The purpose of this front-end is to be connected to any kind of capacitive MEMS sensor. However, to prove the concepts developed in this thesis the architecture has been connected to a pressure MEMS sensor. An experimental prototype was implemented in 130-nm CMOS process using the architecture mentioned before. A peak SNR of 103.9 dB (equivalent to 1Pa) has been achieved within a time measurement of 20 ms. The final prototype has a power consumption of 220 μW with an effective area of 0.317 mm2. The designed architecture shows good performance having competitive numbers against high resolution topologies in amplitude domain.Esta actividad de investigación tiene el propósito de explorar nuevas posibilidades en el diseño de convertidores de capacitancia a digital (CDC) mediante el desarrollo de una solución basada en la conversión en el dominio del tiempo. Estos convertidores se pueden utilizar en aplicaciones relacionadas con el mercado del Internet-de-las-cosas (IoT). Hoy en día, estas aplicaciones están presentes en cualquier dispositivo electrónico donde se necesite sensar una magnitud. Para poder reducir el área de todo el sistema con el rendimiento requerido, se utilizan sensores de sistemas micro-electromecánicos (MEMS) en estas aplicaciones. Proponemos una nueva familia de electrónica de acondicionamiento para integrar con sensores MEMS. Dentro de los convertidores de dominio de tiempo, la topología del doble-rampa (DS) es muy interesante para explorar un nuevo compromiso entre rendimiento, área y consumo de energía. La topología de DS se ha usado ampliamente en instrumentación. La simplicidad y la solidez de los bloques dentro de los convertidores DS clásicos es la principal ventaja. Sin embargo, no son eficientes para aplicaciones donde se requiere mayor ancho de banda. Para ampliar el ancho de banda, los convertidores DS se han introducido en bucles ΔΣ. Esta topología ha sido nombrada como Integrating converters. Esta topología aumenta el ancho de banda en comparación con la arquitectura clásica de DS, pero a expensas de una mayor complejidad. En este trabajo, proponemos el uso de una nueva familia de convertidores DS que mantienen las ventajas de la arquitectura clásica e introducen la configuración del ruido. De esta forma, el ancho de banda aumenta sin bloques adicionales. El convertidor Self-Compensated noise-shaped DS (el nombre dado a la nueva topología) mantiene la función de transferencia de señal (STF) y la función de transferencia de ruido (NTF) de los Integrating converters. Sin embargo, presentamos una nueva topología en el núcleo del convertidor para conformar el ruido sin circuitos adicionales. De esta manera, se preserva la simplicidad de la arquitectura. Proponemos utilizar el Self-Compensated noise-shaped DS como un CDC para sensores MEMS. Este trabajo hace un estudio de la mejor integración posible de los dos bloques para mantener la integridad de la señal considerando el comportamiento electromecánico del sensor. El propósito de este circuito de acondicionamiento es conectarse a cualquier tipo de sensor MEMS capacitivo. Sin embargo, para demostrar los conceptos desarrollados en esta tesis, la arquitectura se ha conectado a un sensor MEMS de presión. Se ha implementado dos prototipos experimentales en un proceso CMOS de 130-nm utilizando la arquitectura mencionada anteriormente. Se ha logrado una relación señal-ruido máxima de 103.9 dB (equivalente a 1 Pa) con un tiempo de medida de 20 ms. El prototipo final tiene un consumo de energía de 220 μW con un área efectiva de 0.317 mm2. La arquitectura diseñada muestra un buen rendimiento comparable con las arquitecturas en el dominio de la amplitud que muestran resoluciones equivalentes.Programa Oficial de Doctorado en Ingeniería Eléctrica, Electrónica y AutomáticaPresidente: Pieter Rombouts.- Secretario: Alberto Rodríguez Pérez.- Vocal: Dietmar Strãußnig

Calibration techniques in nyquist A/D converters

In modern systems signal processing is performed in the digital domain. Contrary to analog circuits, digital signal processing offers more robustness, programmability, error correction and storage possibility. The trend to shift the A/D converter towards the input of the system requires A/D converters with more dynamic range and higher sampling speeds. This puts extreme demands on the A/D converter and potentially increases the power consumption. Calibration Techniques in Nyquist A/D Converters analyses different A/D-converter architectures with an emphasis on the maximum achievable power efficiency. It is shown that in order to achieve high speed and high accuracy at high power efficiency, calibration is required. Calibration reduces the overall power consumption by using the available digital processing capability to relax the demands on critical power hungry analog components. Several calibration techniques are analyzed. The calibration techniques presented in this book are applicable to other analog-to-digital systems, such as those applied in integrated receivers. Further refinements will allow using analog components with less accuracy, which will then be compensated by digital signal processing. The presented methods allow implementing this without introducing a speed or power penalty

Doctor of Philosophy

dissertationAdvancements in process technology and circuit techniques have enabled the creation of small chemical microsystems for use in a wide variety of biomedical and sensing applications. For applications requiring a small microsystem, many components can be integrated onto a single chip. This dissertation presents many low-power circuits, digital and analog, integrated onto a single chip called the Utah Microcontroller. To guide the design decisions for each of these components, two specific microsystems have been selected as target applications: a Smart Intravaginal Ring (S-IVR) and an NO releasing catheter. Both of these applications share the challenging requirements of integrating a large variety of low-power mixed-signal circuitry onto a single chip. These applications represent the requirements of a broad variety of small low-power sensing systems. In the course of the development of the Utah Microcontroller, several unique and significant contributions were made. A central component of the Utah Microcontroller is the WIMS Microprocessor, which incorporates a low-power feature called a scratchpad memory. For the first time, an analysis of scaling trends projected that scratchpad memories will continue to save power for the foreseeable future. This conclusion was bolstered by measured data from a fabricated microcontroller. In a 32 nm version of the WIMS Microprocessor, the scratchpad memory is projected to save ~10-30% of memory access energy depending upon the characteristics of the embedded program. Close examination of application requirements informed the design of an analog-to-digital converter, and a unique single-opamp buffered charge scaling DAC was developed to minimize power consumption. The opamp was designed to simultaneously meet the varied demands of many chip components to maximize circuit reuse. Each of these components are functional, have been integrated, fabricated, and tested. This dissertation successfully demonstrates that the needs of emerging small low-power microsystems can be met in advanced process nodes with the incorporation of low-power circuit techniques and design choices driven by application requirements

Variability-aware low-power techniques for nanoscale mixed-signal circuits.

New circuit design techniques that accommodate lower supply voltages necessary for portable systems need to be integrated into the semiconductor intellectual property (IP) core. Systems that once worked at 3.3 V or 2.5 V now need to work at 1.8 V or lower, without causing any performance degradation. Also, the fluctuation of device characteristics caused by process variation in nanometer technologies is seen as design yield loss. The numerous parasitic effects induced by layouts, especially for high-performance and high-speed circuits, pose a problem for IC design. Lack of exact layout information during circuit sizing leads to long design iterations involving time-consuming runs of complex tools. There is a strong need for low-power, high-performance, parasitic-aware and process-variation-tolerant circuit design. This dissertation proposes methodologies and techniques to achieve variability, power, performance, and parasitic-aware circuit designs. Three approaches are proposed: the single iteration automatic approach, the hybrid Monte Carlo and design of experiments (DOE) approach, and the corner-based approach. Widely used mixed-signal circuits such as analog-to-digital converter (ADC), voltage controlled oscillator (VCO), voltage level converter and active pixel sensor (APS) have been designed at nanoscale complementary metal oxide semiconductor (CMOS) and subjected to the proposed methodologies. The effectiveness of the proposed methodologies has been demonstrated through exhaustive simulations. Apart from these methodologies, the application of dual-oxide and dual-threshold techniques at circuit level in order to minimize power and leakage is also explored

Energy autonomous systems : future trends in devices, technology, and systems

The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications

Pixels for focal-plane scale space generation and for high dynamic range imaging

Focal-plane processing allows for parallel processing throughout the entire pixel matrix, which can help increasing the speed of vision systems. The fabrication of circuits inside the pixel matrix increases the pixel pitch and reduces the fill factor, which leads to reduced image quality. To take advantage of the focal-plane processing capabilities and minimize image quality reduction, we first consider the inclusion of only two extra transistors in the pixel, allowing for scale space generation at the focal plane. We assess the conditions in which the proposed circuitry is advantageous. We perform a time and energy analysis of this approach in comparison to a digital solution. Considering that a SAR ADC per column is used and the clock frequency is equal to 5.6 MHz, the proposed analysis show that the focal-plane approach is 26 times faster if the digital solution uses 10 processing elements, and 49 times more energy-efficient. Another way of taking advantage of the focal-plane signal processing capability is by using focal-plane processing for increasing image quality itself, such as in the case of high dynamic range imaging pixels. This work also presents the design and study of a pixel that captures high dynamic range images by sensing the matrix average luminance, and then adjusting the integration time of each pixel according to the global average and to the local value of the pixel. This pixel was implemented considering small structural variations, such as different photodiode sizes for global average luminance measurement. Schematic and post-layout simulations were performed with the implemented pixel using an input image of 76 dB, presenting results with details in both dark and bright image areas.O processamento no plano focal de imageadores permite que a imagem capturada seja processada em paralelo por toda a matrix de pixels, característica que pode aumentar a velocidade de sistemas de visão. Ao fabricar circuitos dentro da matrix de pixels, o tamanho do pixel aumenta e a razão entre área fotossensível e a área total do pixel diminui, reduzindo a qualidade da imagem. Para utilizar as vantagens do processamento no plano focal e minimizar a redução da qualidade da imagem, a primeira parte da tese propõe a inclusão de dois transistores no pixel, o que permite que o espaço de escalas da imagem capturada seja gerado. Nós então avaliamos em quais condições o circuito proposto é vantajoso. Nós analisamos o tempo de processamento e o consumo de energia dessa proposta em comparação com uma solução digital. Utilizando um conversor de aproximações sucessivas com frequência de 5.6 MHz, a análise proposta mostra que a abordagem no plano focal é 26 vezes mais rápida que o circuito digital com 10 elementos de processamento, e consome 49 vezes menos energia. Outra maneira de utilizar processamento no plano focal consiste em aplicá-lo para melhorar a qualidade da imagem, como na captura de imagens em alta faixa dinâmica. Esta tese também apresenta o estudo e projeto de um pixel que realiza a captura de imagens em alta faixa dinâmica através do ajuste do tempo de integração de cada pixel utilizando a iluminação média e o valor do próprio pixel. Esse pixel foi projetado considerando pequenas variações estruturais, como diferentes tamanhos do fotodiodo que realiza a captura do valor de iluminação médio. Simulações de esquemático e pós-layout foram realizadas com o pixel projetado utilizando uma imagem com faixa dinâmica de 76 dB, apresentando resultados com detalhes tanto na parte clara como na parte escura da imagem

High Speed Camera Chip

abstract: The market for high speed camera chips, or image sensors, has experienced rapid growth over the past decades owing to its broad application space in security, biomedical equipment, and mobile devices. CMOS (complementary metal-oxide-semiconductor) technology has significantly improved the performance of the high speed camera chip by enabling the monolithic integration of pixel circuits and on-chip analog-to-digital conversion. However, for low light intensity applications, many CMOS image sensors have a sub-optimum dynamic range, particularly in high speed operation. Thus the requirements for a sensor to have a high frame rate and high fill factor is attracting more attention. Another drawback for the high speed camera chip is its high power demands due to its high operating frequency. Therefore, a CMOS image sensor with high frame rate, high fill factor, high voltage range and low power is difficult to realize. This thesis presents the design of pixel circuit, the pixel array and column readout chain for a high speed camera chip. An integrated PN (positive-negative) junction photodiode and an accompanying ten transistor pixel circuit are implemented using a 0.18 µm CMOS technology. Multiple methods are applied to minimize the subthreshold currents, which is critical for low light detection. A layout sharing technique is used to increase the fill factor to 64.63%. Four programmable gain amplifiers (PGAs) and 10-bit pipeline analog-to-digital converters (ADCs) are added to complete on-chip analog to digital conversion. The simulation results of extracted circuit indicate ENOB (effective number of bits) is greater than 8 bits with FoM (figures of merit) =0.789. The minimum detectable voltage level is determined to be 470μV based on noise analysis. The total power consumption of PGA and ADC is 8.2mW for each conversion. The whole camera chip reaches 10508 frames per second (fps) at full resolution with 3.1mm x 3.4mm area.Dissertation/ThesisMasters Thesis Electrical Engineering 201