81 research outputs found

    An efficient tool for the assisted design of SAR ADCs capacitive DACs

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    The optimal design of SAR ADCs requires the accurate estimate of nonlinearity and parasitic capacitance effects in the feedback charge redistribution DAC. Since both contributions depend on the specific array topology, complex calculations, custom modeling and heavy simulations in common circuit design environments are often required. This paper presents a MATLAB-based numerical environment to assist the design of the charge redistribution DACs adopted in SAR ADCs. The tool performs both parametric and statistical simulations taking into account capacitive mismatch and parasitic capacitances computing both differential and integral nonlinearity (DNL, INL). An excellent agreement is obtained with the results of circuit simulators (e.g. Cadence Spectre) featuring up to 10^4 shorter simulation time, allowing statistical simulations that would be otherwise impracticable. The switching energy and SNDR degradation due to static nonlinear effects are also estimated. Simulations and measurements on three designed and two fabricated prototypes confirm that the proposed tool can be used as a valid instrument to assist the design of a charge redistribution SAR ADC and to predict its static and dynamic metrics

    Parallel-sampling ADC architecture for power-efficient broadband multi-carrier systems

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    A Triple-Mode Performance-Optimized Reconfigurable Incremental ADC for Smart Sensor Applications

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    This paper proposes a triple-mode discrete-time incremental analog-to-digital converter (IADC) employing successive approximation register (SAR)-based zooming and extended counting (EC) schemes to achieve programmable trade-off capability of resolution and power consumption in various smart sensor applications. It mainly consists of an incremental delta???sigma modulator and the proposed SAR-EC sub-ADC for alternate operation of the coarse SAR conversion and EC. They can be reconfigured to operate separately depending on the application requirements. The SAR-based zooming structure allows the IADC to have better linearity and resolution, and additional activation of the EC function gives the further resolution. During this reconfigurable conversion process, pipelined reusing operation of sub-blocks reduces the silicon area and the number of cycles for target resolutions. A prototype ADC is fabricated in a 180-nm CMOS process, and its triple-mode operation of high-resolution, medium-resolution, and low-power is experimentally verified to achieve 116.1-, 109.4-, and 73.3-dB dynamic ranges, consuming 1.60, 1.26, and 0.39 mW, respectively

    A 2-MS/s, 11.22 ENOB, extended input range SAR ADC with improved DNL and offset calculation

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    A 12-bit successive approximation register analog-to-digital converter (ADC) with extended input range is presented. Employing an input sampling scaling technique, the presented ADC can digitize the signals with an input range of 3.2 V pp-d (±1.33 V REF ). The circuit also includes a comparator offset compensation technique that results in a residual offset of less than 0.5 LSB. The chip has been designed and implemented in a 0.13-Όm CMOS process and demonstrates the state-of-the-art performance, featuring an SNDR of 69.3 dB and the SFDR of 79 dB without requiring any calibration. Total power consumption of the ADC is 0.9 mW, with a measured differential non-linearity of 1.2/-1.0 LSB and INL of 2.3/-2.2 LSB

    Design, analysis and optimization of a dynamically reconfi gurable regenerative comparator for ultra-low power 6-bit TC-ADCs in 90nm CMOS technology

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    In this work the threshold conïŹgurable regenerative comparator on which TC-ADCs are based is optimized to further reduce the power consumption for use in battery-less biomedical sensor applications.\nMoreover, the effect of device mismatches on the offset, gain and linearity errors of the ADC is analyzed by means of Monte Carlo simulations.\nThis optimized comparator reduces the power consumption from 13uW to 3uW, while maintaining the same full scale rang

    Mismatch-Immune Successive-Approximation Techniques for Nanometer CMOS ADCs

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    During the past decade, SAR ADCs have enjoyed increasing prominence due to their inherently scaling-friendly architecture. Several recent SAR ADC innovations focus on decreasing power consumption, mitigating thermal noise, and improving bandwidth, however most of those that use non-hybrid architectures are limited to moderate (8-10 bit) resolu- tion. Assuming an almost rail-to-rail dynamic range, comparator noise and DAC element mismatch constraints are critical but not insurmountable at 10 bits of resolution or less in sub-100nm processes. On the other hand, analysis shows that for medium-resolution ADCs (11-15 bits, depending on the LSB voltage of the converter), the mismatch sizing constraint still dominates unit capacitor sizing over the kT/C sampling noise constraint, and can only be mitigated by drawing increasingly larger capacitors. The focus of this work is to extend the scaling benefits of the SAR architecture to medium and higher ADC resolutions through mitigating and ultimately harnessing DAC element mismatch. This goal is achieved via a novel, completely reconfigurable capacitor DAC that allows the rearranging of capacitors to different trial groupings in the SAR cycle so that mismatch can be canceled. The DAC is implemented in a 12-bit SAR ADC in 65nm CMOS, and a nearly 2-bit improvement in linearity is demonstrated with a simple reconfiguration algorithm.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138630/1/ncolins_1.pd

    Built-in self-test and self-calibration for analog and mixed signal circuits

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    Analog-to-digital converters (ADC) are one of the most important components in modern electronic systems. In the mission-critical applications such as automotive, the reliability of the ADC is critical as the ADC impacts the system level performance. Due to the aging effect and environmental changes, the performance of the ADC may degrade and even fail to meet the accuracy requirement over time. Built-in self-test (BIST) and self-calibration are becoming the ultimate solution to achieve lifetime reliability. This dissertation introduces two ADC testing algorithms and two ADC built-in self-test circuit implementations to test the ADC integral nonlinearity (INL) and differential nonlinearity (DNL) on-chip. In the first testing algorithm, the ultrafast stimulus error removal and segmented model identification of linearity errors (USER-SMILE) is developed for ADC built-in self-test, which eliminates the need for precision stimulus and reduces the overall test time. In this algorithm, the ADC is tested twice with a nonlinear ramp, instead of using a linear ramp signal. Therefore, the stimulus can be easily generated on-chip in a low-cost way. For the two ramps, there is a constant voltage shift in between. As the input stimulus linearity is completely relaxed, there is no requirement on the waveform of the input stimulus as long as it covers the ADC input range. In the meantime, the high-resolution ADC linearity is modeled with segmented parameters, which reduces the number of samples required for achieving high-precision test, thus saving the test time. As a result, the USER-SMILE algorithm is able to use less than 1 sample/code nonlinear stimulus to test high resolution ADCs with less than 0.5 least significant bit (LSB) INL estimation error, achieving more than 10-time test time reduction. This algorithm is validated with both board-level implementation and on-chip silicon implementation. The second testing algorithm is proposed to test the INL/DNL for multi-bit-per-stages pipelined ADCs with reduced test time and better test coverage. Due to the redundancy characteristics of multi-bit-per-stages pipelined ADC, the conventional histogram test cannot estimate and calibrate the static linearity accurately. The proposed method models the pipelined ADC nonlinearity as segmented parameters with inter-stage gain errors using the raw codes instead of the final output codes. During the test phase, a pure sine wave is sent to the ADC as the input and the model parameters are estimated from the output data with the system identification method. The modeled errors are then removed from the digital output codes during the calibration phase. A high-speed 12-bit pipelined ADC is tested and calibrated with the proposed method. With only 4000 samples, the 12-bit ADC is accurately tested and calibrated to achieve less than 1 LSB INL. The ADC effective number of bits (ENOB) is improved from 9.7 bits to 10.84 bits and the spurious-free dynamic range (SFDR) is improved by more than 20dB after calibration. In the first circuit implementation, a low-cost on-chip built-in self-test solution is developed using an R2R digital-to-analog converter (DAC) structure as the signal generator and the voltage shift generator for ADC linearity test. The proposed DAC is a subradix-2 R2R DAC with a constant voltage shift generation capability. The subradix-2 architecture avoids positive voltage gaps caused by mismatches, which relaxes the DAC matching requirements and reduces the design area. The R2R DAC based BIST circuit is fabricated in TSMC 40nm technology with a small area of 0.02mm^2. Measurement results show that the BIST circuit is capable of testing a 15-bit ADC INL accurately with less than 0.5 LSB INL estimation error. In the second circuit implementation, a complete SAR ADC built-in self-test solution using the USER-SMILE is developed and implemented in a 28nm automotive microcontroller. A low-cost 12-bit resistive DAC with less than 12-bit linearity is used as the signal generator to test and calibrate a SAR ADC with a target linearity of 12 bits. The voltage shift generation is created inside the ADC with capacitor switching. The entire algorithm processing unit for USER-SMILE algorithm is also implemented on chip. The final testing results are saved in the memory for further digital calibration. Both the total harmonic distortion (THD) and the SFDR are improved by 20dB after calibration, achieving -84.5dB and 86.5dB respectively. More than 700 parts are tested to verify the robustness of the BIST solution

    Investigation and design of key circuit blocks in a 10 bit SAR ADC at 100 MS/s

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    The work in this thesis is based on the investigation and design of key circuit blocks in a high speed, high resolution SAR ADC in TSMC’s 28nm technology. The research carried out analyses the circuit limitations of the switched capacitor DAC and the settling problems of the reference voltage associated with a switched capacitor scheme. The switched capacitor DAC is a critical block for overall ADC performance and various trade-offs are weighed up before discussing the layout of the split capacitor DAC implemented in the project, from unit capacitor up to top level routing. It also investigates the main sources of error using this topology and implements effective ways of mitigating these errors. The schematic design of DAC switches is also carried out and the results section discusses the top level linearity performance of the DAC. This work also focuses on detailed analysis and implementation of a reference buffer circuit solution that is capable of supplying a reference voltage that is highly accurate and can settle in enough time for the high speed and high resolution specifications required by the SAR ADC. Various solutions were comprehensively investigated for this problem and the design of the chosen flipped voltage follower topology was implemented in schematic and layout. It was subsequently simulated at schematic and extracted parasitics level to verify its functionality and determine its overall performance. Finally, the work done in each block is verified in the context of the whole ADC by top level schematic and extracted layout simulation

    A 4-channel 12-bit high-voltage radiation-hardened digital-to-analog converter for low orbit satellite applications

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    This paper presents a circuit design and an implementation of a four-channel 12-bit digital-to-analog converter (DAC) with high-voltage operation and radiation-tolerant attribute using a specific CSMC H8312 0.5-Όm Bi-CMOS technology to achieve the functionality across a wide-temperature range from -55 °C to 125 °C. In this paper, an R-2R resistor network is adopted in the DAC to provide necessary resistors matching which improves the DAC precision and linearity with both the global common centroid and local common centroid layout. Therefore, no additional, complicated digital calibration or laser-trimming are needed in this design. The experimental and measurement results show that the maximum frequency of the single-chip four-channel 12-bit R-2R ladder high-voltage radiation-tolerant DAC is 100 kHz, and the designed DAC achieves the maximum value of differential non-linearity of 0.18 LSB, and the maximum value of integral non-linearity of -0.53 LSB at 125 °C, which is close to the optimal DAC performance. The performance of the proposed DAC keeps constant over the whole temperature range from -55 °C to 125 °C. Furthermore, an enhanced radiation-hardened design has been demonstrated by utilizing a radiation chamber experimental setup. The fabricated radiation-tolerant DAC chipset occupies a die area of 7 mm x 7 mm in total including pads (core active area of 4 mm x 5 mm excluding pads) and consumes less than 525 mW, output voltage ranges from -10 to +10 V
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