Disseny microelectrnic de circuits discriminadors de polsos pel detector LHCb

The aim of this thesis is to present a solution for implementing the front end system of the Scintillator Pad Detector (SPD) of the calorimeter system of the LHCb experiment that will start in 2008 at the Large Hadron Collider (LHC) at CERN. The requirements of this specific system are discussed and an integrated solution is presented, both at system and circuit level. We also report some methodological achievements. In first place, a method to study the PSRR (and any transfer function) in fully differential circuits taking into account the effect of parameter mismatch is proposed. Concerning noise analysis, a method to study time variant circuits in the frequency domain is presented and justified. This would open the possibility to study the effect of 1/f noise in time variants circuits. In addition, it will be shown that the architecture developed for this system is a general solution for front ends in high luminosity experiments that must be operated with no dead time and must be robust against ballistic deficit

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

Advanced Multispectral Scanner (AMS) study

The status of aircraft multispectral scanner technology was accessed in order to develop preliminary design specifications for an advanced instrument to be used for remote sensing data collection by aircraft in the 1980 time frame. The system designed provides a no-moving parts multispectral scanning capability through the exploitation of linear array charge coupled device technology and advanced electronic signal processing techniques. Major advantages include: 10:1 V/H rate capability; 120 deg FOV at V/H = 0.25 rad/sec; 1 to 2 rad resolution; high sensitivity; large dynamic range capability; geometric fidelity; roll compensation; modularity; long life; and 24 channel data acquisition capability. The field flattening techniques of the optical design allow wide field view to be achieved at fast f/nos for both the long and short wavelength regions. The digital signal averaging technique permits maximization of signal to noise performance over the entire V/H rate range

Circuit techniques for low-voltage and high-speed A/D converters

The increasing digitalization in all spheres of electronics applications, from telecommunications systems to consumer electronics appliances, requires analog-to-digital converters (ADCs) with a higher sampling rate, higher resolution, and lower power consumption. The evolution of integrated circuit technologies partially helps in meeting these requirements by providing faster devices and allowing for the realization of more complex functions in a given silicon area, but simultaneously it brings new challenges, the most important of which is the decreasing supply voltage. Based on the switched capacitor (SC) technique, the pipelined architecture has most successfully exploited the features of CMOS technology in realizing high-speed high-resolution ADCs. An analysis of the effects of the supply voltage and technology scaling on SC circuits is carried out, and it shows that benefits can be expected at least for the next few technology generations. The operational amplifier is a central building block in SC circuits, and thus a comparison of the topologies and their low voltage capabilities is presented. It is well-known that the SC technique in its standard form is not suitable for very low supply voltages, mainly because of insufficient switch control voltage. Two low-voltage modifications are investigated: switch bootstrapping and the switched opamp (SO) technique. Improved circuit structures are proposed for both. Two ADC prototypes using the SO technique are presented, while bootstrapped switches are utilized in three other prototypes. An integral part of an ADC is the front-end sample-and-hold (S/H) circuit. At high signal frequencies its linearity is predominantly determined by the switches utilized. A review of S/H architectures is presented, and switch linearization by means of bootstrapping is studied and applied to two of the prototypes. Another important parameter is sampling clock jitter, which is analyzed and then minimized with carefully-designed clock generation and buffering. The throughput of ADCs can be increased by using parallelism. This is demonstrated on the circuit level with the double-sampling technique, which is applied to S/H circuits and a pipelined ADC. An analysis of nonidealities in double-sampling is presented. At the system level parallelism is utilized in a time-interleaved ADC. The mismatch of parallel signal paths produces errors, for the elimination of which a timing skew insensitive sampling circuit and a digital offset calibration are developed. A total of seven prototypes are presented: two double-sampled S/H circuits, a time-interleaved ADC, an IF-sampling self-calibrated pipelined ADC, a current steering DAC with a deglitcher, and two pipelined ADCs employing the SO technique.reviewe

Generalised sensor linearisation and calibration

The aim of this work was to conduct a survey of current sensor measurement technologies and investigate sensor linearisation, cahbration and compensation methods m order to determine the methods most suitable for generic embedded sensor implementation. The thesis contains a comprehensive survey of sensor technologies and their interfacing requirements as a prerequisite for determining modules required by the generic embedded sensor interface. Different linearisation and calibration techmques are investigated and the most promising techniques, curve fitting and progressive polynomial calibration method, are then examined in greater detail and simulations performed to compare their performance. The fundamental limitations and trade offs in design and implementation on the microprocessor of these methods are studied. The design of the compensation module is also presented and its implementation on the microprocessor m the form of the C code is described. All methods are tested and implemented on a PIC microcontroller as a part of linearisation, cahbration and compensation module of the generic embedded sensor interface

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range

Journal of Telecommunications and Information Technology, 2007, nr 2

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Eighth International Workshop on Laser Ranging Instrumentation

The Eighth International Workshop for Laser Ranging Instrumentation was held in Annapolis, Maryland in May 1992, and was sponsored by the NASA Goddard Space Flight Center in Greenbelt, Maryland. The workshop is held once every 2 to 3 years under differing institutional sponsorship and provides a forum for participants to exchange information on the latest developments in satellite and lunar laser ranging hardware, software, science applications, and data analysis techniques. The satellite laser ranging (SLR) technique provides sub-centimeter precision range measurements to artificial satellites and the Moon. The data has application to a wide range of Earth and lunar science issues including precise orbit determination, terrestrial reference frames, geodesy, geodynamics, oceanography, time transfer, lunar dynamics, gravity and relativity