Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs to form AlGaAs/GaAs NW high-electron mobility channels. Radio frequency (RF) transistors are fabricated and show excellent dc and high-frequency performance. An fmax > 75 GHz with 104 is measured which is superior compared to carbon-based nanoelectronics and “spin-on III-V NWs”. A comprehensive small-signal model is used to extract the contributing and limiting factors to the RF performance of AlGaAs/GaAs NW-array transistors and predict future performance. Finally, a process is developed to show that III-V NWs on sacrificial epitaxial templates can be transferred to arbitrary substrates. Top-down NWs were formed from Sn-doped Ga2O3 homoepitaxially grown on semi-insulating beta-phase Ga2O3 substrates by metal-organic vapor phase epitaxy. First, conventional planar transistors were fabricated from a sample set to characterize and understand the electrical performance as a function of Sn-doping and epitaxial channel thickness. Second, the high-critical field strength was evaluated to highlight the benefit of using Ga2O3 as a disruptive technology to GaN and SiC. Lastly, the planar transistor results feed into a design for a top-down NW-array transistor. The Ga2O3 NW-arrays were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters

Design and implementation of miniaturised capsule for autofluorescence detection with possible application to the bowel disease

Early signs of intestinal cancer may be detected through variations in tissue autofluorescence (AF), however current endoscope-based AF systems are unable to inspect the small intestine. This thesis describes the design, fabrication, implantation, testing and packaging of a wireless pill capable of detecting the autofluorescence from cancerous cells, and able to reach parts of the gastrointestinal tract that are inaccessible to endoscopes. The pill exploits the fact that there is a significant difference in the intensity of autofluorescence emitted by normal and cancerous tissues when excited by a blue or ultra violet light source. The intensity differences are detected using very sensitive light detectors. The pill has been developed in two stages. The first stage starts with using an off-chip multi-pixel photon counter (MPPC) device as a light detector. In the second stage, the light detector is integrated into an application specific integrated circuit (ASIC). The pill comprises of an ASIC, optical filters, an information processing unit and a radio transmission unit, to transmit acquired data to an external base station. Two ASICs have been fabricated, the first stage of this work involved implementing an ASIC that contains two main blocks; the first block is capable of providing a variable DC voltage more than 72 V from a 3 V input to bias the MPPC device. The second main block is a front-end consisting of a high speed transimpedance amplifier (TIA) and voltage amplifiers to capture the very small current pulses produced by the MPPC. The second ASIC contains a high voltage charge pump up to (37.9 V) integrated with a single photon avalanche detector (SPAD). The charge pump is used to bias the SPAD above its breakdown voltage and therefore operate the device in Geiger mode. The SPAD was designed to operate in the visible region where its photon detection efficiency (PDE) peaks at 465 nm, which is near to human tissues autofluorescence peaking region (520±10 nm). The use of the ultra low light detector to detect the autofluorescence permits a lower excitation light intensity and therefore lower overall power consumption. The two ASICs were fabricated using a commercial triple-well high-voltage CMOS process. The complete device operates at 3V and draws an average of 7.1mA, enabling up to 23 hours of continuous operation from two 165mAh SR44 batteries