Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology

The objective of this research is to study and leverage the unique properties and advantages of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to better design radio frequency (RF) and millimeter wave (mm-wave) circuit components. With recent developments, the high yield and modest cost silicon-based semiconductor technologies have proven to be attractive and cost-effective alternatives to high-performance III-V technology platforms. Between SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology and advanced RF complementary metal-oxide-semiconductor (CMOS) technology, the fundamental device-level differences between SiGe HBTs and field-effect transistors (FETs) grant SiGe HBTs clear advantages as well as unique design concerns. The work presented in this dissertation identifies several advantages and challenges on design using SiGe HBTs and provides design examples that exploit and address these unique benefits and problems with circuit component designs using SiGe HBTs.Ph.D

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

A Single-photon Source Based on a Lateral n-i-p Junction Driven by a Surface Acoustic Wave

Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. In this thesis, a single-photon source driven by a surface acoustic wave (SAW) is developed and characterised. This single-photon source is based on a SAW-driven lateral n-i-p junction in a GaAs quantum-well structure. On this device, the lateral n-i-p junction is formed by gate-induced electrons and holes in two adjacent regions. The SAW potential minima create dynamic quantum dots in a 1D channel between these two regions, and are able to transport single electrons to the region of holes along the channel. Single-photon emission can therefore be generated as these electrons consecutively recombine with holes. After characterisation and optimisation in four batches of devices, clear SAW-driven charge transport and the corresponding electroluminescence (EL) can be observed on an optimised SAW-driven n-i-p junction. Time-resolved measurements have been carried out to study the dynamics of SAW-driven electrons. Time-resolved EL signals indicate that a packet of electrons is transported to the region of holes in each SAW minimum. In addition, the carrier lifetime of SAW-driven electrons in the region of holes is shown to be $\sim 100$ ps, which is much shorter than the SAW period of $860$ ps. Hence, it is promising to observe single-photon emission in the optimised device. In order to test single-photon emission, a Hanbury Brown-Twiss experimental setup has been employed to record an autocorrelation histogram of the SAW-driven EL signal at the single-electron regime. Suppression of autocorrelation coincidences at time delay $\Delta t = 0$ is evidence of photon antibunching. By fitting theoretical functions describing the SAW-driven EL signal, it is found that the second-order correlation function shows $g^{(2)}(0) = 0.39 \pm 0.05$, which is lower than the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Moreover, theoretical calculation and simulation suggest that, if a constant background signal can be filtered out, $\sim 80 \%$ of the SAW-driven EL is single-photon emission.Cambridge Overseas Trust, Taiwan Government, Robinson college, Cavendish Laboratory, Cambridge Student Registry

Superconducting Nanowire Single-Photon Detectors for Quantum Photonic Integrated Circuits on GaAs

Superconducting nanowire single-photon detectors (SNSPDs) are very promising as integrated detectors for future quantum photonic integrated circuits. In this work, main technological challenges for the integration of NbN based SNSPDs onto GaAs based phonic circuits are addressed. A new approach to improve the performance of meander style SNSPDs based on a variable thickness is introduced and the first full integration of a quantum photonic chip on a scalable monolithic platform is demonstrated

NASA Tech Briefs, February 2009

Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: Measuring Low Concentrations of Liquid Water in Soil; The Mars Science Laboratory Touchdown Test Facility; Non-Contact Measurement of Density and Thickness Variation in Dielectric Materials; Compact Microwave Fourier Spectrum Analyzer; InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz; Combinatorial Generation of Test Suites; In-Phase Power-Combined Frequency Tripler at 300 GHz; Electronic System for Preventing Airport Runway Incursions; Smaller but Fully Functional Backshell for Cable Connector; Glove-Box or Desktop Virtual-Reality System; Composite Layer Manufacturing with Fewer Interruptions; Improved Photoresist Coating for Making CNT Field Emitters; A Simplified Diagnostic Method for Elastomer Bond Durability; Complex Multifunctional Polymer/Carbon-Nanotube Composites; Very High Output Thermoelectric Devices Based on ITO Nanocomposites; Reducing Unsteady Loads on a Piggyback Miniature Submarine; Ultrasonic/Sonic Anchor; Grooved Fuel Rings for Nuclear Thermal Rocket Engines; Pulsed Operation of an Ion Accelerator; Autonomous Instrument Placement for Mars Exploration Rovers; Mission and Assets Database; TCP/IP Interface for the Satellite Orbit Analysis Program (SOAP); Trajectory Calculator for Finite-Radius Cutter on a Lathe; Integrated System Health Management Development Toolkit

Tunable mid-infrared light sources based on intersubband transitions

This thesis describes how for the first time, unidirectional operation and coupled ring tuning were realised on a quantum cascade laser material; specifically on a new strain compensated In0.7Ga0.3As/AlAs0.6Sb0.4 grown on InP substrate and operates in pulsed mode in the 3-4 micron hydrocarbon absorption region. Unidirectional ring lasers have the advantages that, in the favoured emission direction, they can have up to double the quantum efficiency of bidirectional lasers and do not suffer from spatial hole burning. In this work, this operation was realised by incorporating an "S"-crossover waveguide into the ring cavity in a manner that it introduces non reciprocal loss and gain in the counter-clockwise (CCW) and clockwise (CW) directions respectively. The measured result showed higher quantum efficiency in the CW. In fact at 1.5 times the threshold current, 90 % of the light was emitted in the favoured CW. On the other hand, the coupled ring quantum cascade laser showed nearly single mode operation, with side mode suppression ratio ~22 dB. Continuous wavelength tuning of about 13 nm was observed from one of these devices, at a tuning rate of approximately 0.4 nm/mA