Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

Energy-efficient amplifiers based on quasi-floating gate techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32

Class-AB rail-to-rail CMOS buffer with bulk-driven super source followers

This paper describes a rail-to-rail CMOS analog voltage buffer designed to have extremely low static current consumption as well as high current drive capability. The buffer employs a complementary pair of super source followers, but a bulk-driven input device with the replica-biased scheme is utilized to eliminate the DC level shift, quasi-floating gate transistors to achieve class-AB performance, and a current switch which shifts between the complementary pair to allow rail-to-rail operation. The proposed buffer has been designed for a 0.35 mum CMOS technology to operate at a 1.8 V supply voltage. The simulated results are provided to demonstrate that the total harmonic distortion for a 1.6 Vpp 100 kHz sine wave with a 68 pF load is as low as -46 dB, whilst the static current consumption remains under 8 muA

Design of two-stage class AB CMOS buffers: a systematic approach

A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 μm CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 μW)

Low Voltage Low Power Analogue Circuits Design

Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

High-Linearity Self-Biased CMOS Current Buffer

A highly linear fully self-biased class AB current buffer designed in a standard 0.18 mu m CMOS process with 1.8 V power supply is presented in this paper. It is a simple structure that, with a static power consumption of 48 mu W, features an input resistance as low as 89 Omega, high accuracy in the input-output current ratio and total harmonic distortion (THD) figures lower than -60 dB at 30 mu A amplitude signal and 1 kHz frequency. Robustness was proved through Monte Carlo and corner simulations, and finally validated through experimental measurements, showing that the proposed configuration is a suitable choice for high performance low voltage low power applications