Architecting SkyBridge-CMOS

As the scaling of CMOS approaches fundamental limits, revolutionary technology beyond the end of CMOS roadmap is essential to continue the progress and miniaturization of integrated circuits. Recent research efforts in 3-D circuit integration explore pathways of continuing the scaling by co-designing for device, circuit, connectivity, heat and manufacturing challenges in a 3-D fabric-centric manner. SkyBridge fabric is one such approach that addresses fine-grained integration in 3-D, achieves orders of magnitude benefits over projected scaled 2-D CMOS, and provides a pathway for continuing scaling beyond 2-D CMOS. However, SkyBridge fabric utilizes only single type transistors in order to reduce manufacture complexity, which limits its circuit implementation to dynamic logic. This design choice introduces multiple challenges for SkyBridge such as high switching power consumption, susceptibility to noise, and increased complexity for clocking. In this thesis we propose a new 3-D fabric, similar in mindset to SkyBridge, but with static logic circuit implementation in order to mitigate the afore-mentioned challenges. We present an integrated framework to realize static circuits with vertical nanowires, and co-design it across all layers spanning fundamental fabric structures to large circuits. The new fabric, named as SkyBridge-CMOS, introduces new technology, structures and circuit designs to meet the additional requirements for implementing static circuits. One of the critical challenges addressed here is integrating both n-type and p-type nanowires. Molecular bonding process allows precise control between different doping regions, and novel fabric components are proposed to achieve 3-D routing between various doping regions. Core fabric components are designed, optimized and modeled with their physical level information taken into account. Based on these basic structures we design and evaluate various logic gates, arithmetic circuits and SRAM in terms of power, area footprint and delay. A comprehensive evaluation methodology spanning material/device level to circuit level is followed. Benchmarking against 16nm 2-D CMOS shows significant improvement of up to 50X in area footprint and 9.3X in total power efficiency for low power applications, and 3X in throughput for high performance applications. Also, better noise resilience and better power efficiency can be guaranteed when compared with original SkyBridge fabrics

DESIGN, MODELING, OPTIMIZATION, AND BENCHMARKING OF INTERCONNECTS AND SCALING TECHNOLOGIES AND THEIR CIRCUIT AND SYSTEM LEVEL IMPACT

This research focuses on the future of integrated circuit (IC) scaling technologies at the device and back end of line (BEOL) level. This work includes high level modeling of different technologies and quantifying potential performance gains on a circuit and system level. From the device side, this research looks at the scaling challenges and the future scaling drivers for conventional charge-based devices implemented at the 7nm technology node and beyond. It examines the system-level performance of stacking device logic in addition to tunneling field effect transistors (TFET) and their potential as beyond-CMOS devices. Finally, this research models and benchmarks BEOL scaling challenges and evaluates proposed technological advancements such as metal barrier scaling for copper interconnects and replacing local interconnects with ruthenium. Potential impact on performance, power, and area of these interconnect technologies is quantified for fully placed and routed circuits.Ph.D

FPGA Architecture Optimization Using Geometric Programming

Volume 4 No 13 of the periodical Progression. Published November, February, May and August by The Radiant Healing Centre. SPCL PER BT 732 P76 V.1,1932-V.5,193

Integralni pristup sustavima energetske elektronike

Today\u27s power electronics systems are typically manufactured using non-standard parts, resulting in labor-intensive manufacturing processes, increased cost and poor reliability. As a possible way to overcome these problems, this paper discusses an integrated approach to design and manufacture power electronics systems to improve performance, reliability and cost effectiveness. Addressed in the paper are the technologies being developed for integration of both power supplies and motor drives. These technologies include the planar metalization to eliminate bonding wires, the integration of power passives, the integration of current sensors, the development of power devices to facilitate integration as well as to improve performance, and the integration of necessary CAD tools to address the multidisciplinary aspects of integrated systems. The development of Integrated Power Electronics Modules (IPEMs) is demonstrated for two applications: (1) 1 kW asymmetrical half-bridge DC-DC converter and (2) 1–3 kW motor drive for heating, ventilation and air conditioning (HVAC). Electrical and thermal design tradeoffs of IPEMs and related enabling technologies are described in the paper.Današnji sustavi energetske elektronike se obično proizvode iz nestandardnih dijelova. Posljedica toga je laboratorijska proizvodnja elektroničkih učinskih pretvarača, povećani troškovi i smanjena pouzdanost. Jedan od mogućih načina prevladavanja ovih poteškoća jest integralni pristup projektiranju i proizvodnji sustava energetske elektronike. Posebice se razmatraju tehnologije razvijene za integraciju učinskih krugova i motora. Ove tehnologije uključuju postupke planarne metalizacije za izbjegavanje žičanih vodova, integraciju pasivnih dijelova učinskih krugova, integraciju strujnih senzora, te razvoj takvih poluvodičkih komponenata koje olakšavaju integraciju i poboljšavaju karakteristike uređaja. Pri projektiranju, zbog multidisciplinarnih aspekata integriranih sustava, treba primijeniti nužne CAD alate. Razvoj integriranih modula elektroničkih učinskih pretvarača (engl. integrated power electronics modules, IPEM) ilustriran je na dvije primjene: (1) istosmjerni pretvarač snage 1 kW u asimetričnom polumosnom spoju i (2) elektromotorni pogon snage 1 . . . 3 kW za grijanje, ventilaciju i klimatizaciju (engl. heating, ventilation and air conditioning, HVAC). Na IPEM-u objašnjeni su projektantski i tehnološki kompromisi električkog i toplinskog projekta

Nano-scale TG-FinFET: Simulation and Analysis

Transistor has been designed and fabricated in the same way since its invention more than four decades ago enabling exponential shrinking in the channel length. However, hitting fundamental limits imposed the need for introducing disruptive technology to take over. FinFET - 3-D transistor - has been emerged as the first successor to MOSFET to continue the technology scaling roadmap. In this thesis, scaling of nano-meter FinFET has been investigated on both the device and circuit levels. The studies, primarily, consider FinFET in its tri-gate (TG) structure. On the device level, first, the main TCAD models used in simulating electron transport are benchmarked against the most accurate results on the semi-classical level using Monte Carlo techniques. Different models and modifications are investigated in a trial to extend one of the conventional models to the nano-scale simulations. Second, a numerical study for scaling TG-FinFET according to the most recent International Technology Roadmap of Semiconductors is carried out by means of quantum corrected 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes, to assess its ultimate performance and scaling behavior for the next generations. Ballisticity ratio (BR) is extracted and discussed over different channel lengths. The electron velocity along the channel is analyzed showing the physical significance of the off-equilibrium transport with scaling the channel length. On the circuit level, first, the impact of FinFET scaling on basic circuit blocks is investigated based on the PTM models. 256-bit (6T) SRAM is evaluated for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of VT variations on the delay, power, and stability is reported considering die-to-die variations. Second, we move to another peer-technology which is 28nm FD-SOI as a comparative study, keeping the SRAM cell as the test block, more advanced study is carried out considering the cell‘s stability and the evolution from dynamic to static metrics

Design for Test and Hardware Security Utilizing Tester Authentication Techniques

Design-for-Test (DFT) techniques have been developed to improve testability of integrated circuits. Among the known DFT techniques, scan-based testing is considered an efficient solution for digital circuits. However, scan architecture can be exploited to launch a side channel attack. Scan chains can be used to access a cryptographic core inside a system-on-chip to extract critical information such as a private encryption key. For a scan enabled chip, if an attacker is given unlimited access to apply all sorts of inputs to the Circuit-Under-Test (CUT) and observe the outputs, the probability of gaining access to critical information increases. In this thesis, solutions are presented to improve hardware security and protect them against attacks using scan architecture. A solution based on tester authentication is presented in which, the CUT requests the tester to provide a secret code for authentication. The tester authentication circuit limits the access to the scan architecture to known testers. Moreover, in the proposed solution the number of attempts to apply test vectors and observe the results through the scan architecture is limited to make brute-force attacks practically impossible. A tester authentication utilizing a Phase Locked Loop (PLL) to encrypt the operating frequency of both DUT/Tester has also been presented. In this method, the access to the critical security circuits such as crypto-cores are not granted in the test mode. Instead, a built-in self-test method is used in the test mode to protect the circuit against scan-based attacks. Security for new generation of three-dimensional (3D) integrated circuits has been investigated through 3D simulations COMSOL Multiphysics environment. It is shown that the process of wafer thinning for 3D stacked IC integration reduces the leakage current which increases the chip security against side-channel attacks