Process variability in sub-16nm bulk CMOS technology

The document is part of deliverable D3.6 of the TRAMS Project (EU FP7 248789), of public nature, and shows and justifies the levels of variability used in the research project for sub-18nm bulk CMOS technologies.Postprint (published version

Performance impact of a slower main memory: a case study of STT-MRAM in HPC

In high-performance computing (HPC), significant effort is invested in research and development of novel memory technologies. One of them is Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) --- byte-addressable, high-endurance non-volatile memory with slightly higher access time than DRAM. In this study, we conduct a preliminary assessment of HPC system performance impact with STT-MRAM main memory with recent industry estimations. Reliable timing parameters of STT-MRAM devices are unavailable, so we also perform a sensitivity analysis that correlates overall system slowdown trend with respect to average device latency. Our results demonstrate that the overall system performance of large HPC clusters is not particularly sensitive to main-memory latency. Therefore, STT-MRAM, as well as any other emerging non-volatile memories with comparable density and access time, can be a viable option for future HPC memory system design.This work was supported by the Collaboration Agreement between Samsung Electronics Co., Ltd. and BSC, Spanish Government through Programa Severo Ochoa (SEV-2015-0493), by the Spanish Ministry of Science and Technology through TIN2015-65316-P project and by the Generalitat de Catalunya (contracts 2014-SGR-1051 and 2014-SGR-1272). This work has also received funding from the European Union's Horizon 2020 research and innovation programme under ExaNoDe project (grant agreement No 671578).Peer ReviewedPostprint (author's final draft

Enabling a reliable STT-MRAM main memory simulation

STT-MRAM is a promising new memory technology with very desirable set of properties such as non-volatility, byte-addressability and high endurance. It has the potential to become the universal memory that could be incorporated to all levels of memory hierarchy. Although STT-MRAM technology got significant attention of various major memory manufacturers, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters which are required to perform a cycle accurate main memory simulation. Our study presents a detailed analysis of STT-MRAM main memory timing and propose an approach to perform a reliable system level simulation of the memory technology. We seamlessly incorporate STT-MRAM timing parameters into DRAMSim2 memory simulator and use it as a part of the simulation infrastructure of the high-performance computing (HPC) systems. Our results suggests that, STT-MRAM main memory would provide performance comparable to DRAM, while opening up various opportunities for HPC system improvements. Most importantly, our study enables researchers to conduct reliable system level research on STT-MRAM main memory, and to explore the opportunities that this technology has to offer.This work was supported by BSC, Spanish Government through Programa Severo Ochoa (SEV-2015-0493), by the Spanish Ministry of Science and Technology through TIN2015-65316-P project and by the Generalitat de Catalunya (contracts 2014-SGR-1051 and 2014-SGR-1272). This work has also received funding from the European Union's Horizon 2020 research and innovation programme under ExaNoDe project (grant agreement No 671578). The authors wish to thank Terry Hulett, Duncan Bennett and Ben Cooke from Everspin Technologies Inc., for their technical support.Peer ReviewedPostprint (author's final draft

Improving Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) as Next-Generation Memories: A Circuit Perspective

In the memory hierarchy of computer systems, the traditional semiconductor memories Static RAM (SRAM) and Dynamic RAM (DRAM) have already served for several decades as cache and main memory. With technology scaling, they face increasingly intractable challenges like power, density, reliability and scalability. As a result, they become less appealing in the multi/many-core era with ever increasing size and memory-intensity of working sets. Recently, there is an increasing interest in using emerging non-volatile memory technologies in replacement of SRAM and DRAM, due to their advantages like non-volatility, high device density, near-zero cell leakage and resilience to soft errors. Among several new memory technologies, Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) are most promising candidates in building main memory and cache, respectively. However, both of them possess unique limitations that preventing them from being effectively adopted. In this dissertation, I present my circuit design work on tackling the limitations of PCM and STT-MRAM. At bit level, both PCM and STT-MRAM suffer from excessive write energy, and PCM has very limited write endurance. For PCM, I implement Differential Write to remove large number of unnecessary bit-writes that do not alter the stored data. It is then extended to STT-MRAM as Early Write Termination, with specific optimizations to eliminate the overhead of pre-write read. At array level, PCM enjoys high density but could not provide competitive throughput due to its long write latency and limited number of read/write circuits. I propose a Pseudo-Multi-Port Bank design to exploit intra-bank parallelism by recycling and reusing shared peripheral circuits between accesses in a time-multiplexed manner. On the other hand, although STT-MRAM features satisfactory throughput, its conventional array architecture is constrained on density and scalability by the pitch of the per-column bitline pair. I propose a Common-Source-Line Array architecture which uses a shared source-line along the row, essentially leaving only one bitline per column. For these techniques, I provide circuit level analyses as well as architecture/system level and/or process/device level discussions. In addition, relevant background and work are thoroughly surveyed and potential future research topics are discussed, offering insights and prospects of these next-generation memories

Error Characterization and Correction Techniques for Reliable STT-RAM Designs

The concerns on the continuous scaling of mainstream memory technologies have motivated tremendous investment to emerging memories. Being a promising candidate, spin-transfer torque random access memory (STT-RAM) offers nanosecond access time comparable to SRAM, high integration density close to DRAM, non-volatility as Flash memory, and good scalability. It is well positioned as the replacement of SRAM and DRAM for on-chip cache and main memory applications. However, reliability issue continues being one of the major challenges in STT-RAM memory designs due to the process variations and unique thermal fluctuations, i.e., the stochastic resistance switching property of magnetic devices. In this dissertation, I decoupled the reliability issues as following three-folds: First, the characterization of STT-RAM operation errors often require expensive Monte-Carlo runs with hybrid magnetic-CMOS simulation steps, making it impracticable for architects and system designs; Second, the state of the art does not have sufficiently understanding on the unique reliability issue of STT-RAM, and conventional error correction codes (ECCs) cannot efficiently handle such errors; Third, while the information density of STT-RAM can be boosted by multi-level cell (MLC) design, the more prominent reliability concerns and the complicated access mechanism greatly limit its applications in memory subsystems. Thus, I present a novel through solution set to both characterize and tackle the above reliability challenges in STT-RAM designs. In the first part of the dissertation, I introduce a new characterization method that can accurately and efficiently capture the multi-variable design metrics of STT-RAM cells; Second, a novel ECC scheme, namely, content-dependent ECC (CD-ECC), is developed to combat the characterized asymmetric errors of STT-RAM at 0->1 and 1->0 bit flipping's; Third, I present a circuit-architecture design, namely state-restricted multi-level cell (SR-MLC) STT-RAM design, which simultaneously achieves high information density, good storage reliability and fast write speed, making MLC STT-RAM accessible for system designers under current technology node. Finally, I conclude that efficient robust (or ECC) designs for STT-RAM require a deep holistic understanding on three different levels-device, circuit and architecture. Innovative ECC schemes and their architectural applications, still deserve serious research and investigation in the near future

Evaluation of STT-MRAM main memory for HPC and real-time systems

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas

Exploring Spin-transfer-torque devices and memristors for logic and memory applications

As scaling CMOS devices is approaching its physical limits, researchers have begun exploring newer devices and architectures to replace CMOS. Due to their non-volatility and high density, Spin Transfer Torque (STT) devices are among the most prominent candidates for logic and memory applications. In this research, we first considered a new logic style called All Spin Logic (ASL). Despite its advantages, ASL consumes a large amount of static power; thus, several optimizations can be performed to address this issue. We developed a systematic methodology to perform the optimizations to ensure stable operation of ASL. Second, we investigated reliable design of STT-MRAM bit-cells and addressed the conflicting read and write requirements, which results in overdesign of the bit-cells. Further, a Device/Circuit/Architecture co-design framework was developed to optimize the STT-MRAM devices by exploring the design space through jointly considering yield enhancement techniques at different levels of abstraction. Recent advancements in the development of memristive devices have opened new opportunities for hardware implementation of non-Boolean computing. To this end, the suitability of memristive devices for swarm intelligence algorithms has enabled researchers to solve a maze in hardware. In this research, we utilized swarm intelligence of memristive networks to perform image edge detection. First, we proposed a hardware-friendly algorithm for image edge detection based on ant colony. Next, we designed the image edge detection algorithm using memristive networks

Evaluation of STT-MRAM main memory for HPC and real-time systems

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas.Postprint (published version

高電力効率プロセッサのためのキャッシュの設計最適化

学位の種別: 課程博士審査委員会委員 : （主査）東京大学教授 中村 宏, 東京大学教授 原 辰次, 東京大学教授 石川 正俊, 東京大学准教授 近藤 正章, 東京大学准教授 品川 高廣, 東京大学准教授 入江 英嗣University of Tokyo(東京大学