4 research outputs found

    A 40-Gb/s Quarter-Rate SerDes Transmitter and Receiver Chipset in 65-nm CMOS

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    This paper presents a 40-Gb/s transmitter (TX) and receiver (RX) chipset for chip-to-chip communications in a 65-nm CMOS process. The TX implements a quarter-rate multi-multiplexer (MUX)-based four-tap feed-forward equalizer (FFE), where a charge-sharing-effect elimination technique is introduced into the 4:1 MUX to optimize its jitter performance and power efficiency. The RX employs a two-stage continuous-time linear equalizer as the analog front end and integrates a low-cost sign-based zero-forcing engine relying on edge-data correlation to automatically adjust the tap weights of the TX-FFE. By embedding low-pass filters with an adaptively adjusting bandwidth into the data-sampling path and adopting high-linearity compensating phase interpolators, the clock data recovery achieves both high jitter tolerance and low jitter generation. The fabricated TX and RX chipset delivers 40-Gb/s PRBS data at BER 16-dB loss at half-baud frequency, while consuming a total power of 370 mW

    A 2-40 Gb/s PAM4/NRZ dual-mode wireline transmitter with 4:1 MUX in 65-nm CMOS

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    This paper presents a 2-40 Gb/s dual-mode wireline transmitter supporting the four-level pulse amplitude modulation (PAM4) and non-return-to-zero (NRZ) modulation with a multiplexer (MUX)-based two-tap feed-forward equalizer (FFE). An edge-acceleration technique is proposed for the 4:1 MUX to increase the bandwidth. By utilizing a dedicated cascode current source, the output swing can achieve 900 mV with a level deviation of only 0.12% for PAM4. Fabricated in a 65-nm CMOS process, the transmitter consumes 117 mW and 89 mW at 40 Gb/s in PAM4 and NRZ at 1.2 V supply. ยฉ 2018, Institute of Electronics Engineers of Korea. All rights reserved

    LPDDR5์˜ ์™ธ์žฅ ์ž๊ฐ€ ํ…Œ์ŠคํŠธ๋ฅผ ์œ„ํ•œ ๊ณ ์† ์†ก์‹ ๊ธฐ์˜ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ(์„์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022.2. ์ •๋•๊ท .To overcome the speed gap between Automatic Test Equipment (ATE) and memory, the concept of Built-out Self-test (BOST) was introduced. This thesis presents the design of a transmitter for BOST of LPDDR5. It transmits high-speed DQS and WCK to DRAM while receiving low-speed clocks from ATE. Since they donโ€™t always have clock-toggle, a digital block generates some data patterns. Also, by phase interpolators, phases of the outputs are shifted by desired. The analog part of the transmitter consists of phase interpolators, serializers, and drivers. Phase interpolators and drivers are designed in a current mode to be resistant to supply noise. The divider of the serializer is newly proposed so that the timings of all outputs are the same. In addition, the time it takes to receive enabling signals from ATE and transmit outputs to DRAM is constant. As a result, the transmitter sends DQS and WCK with data patterns to DRAM at the desired timing. The proposed transmitter is fabricated in a 40 nm CMOS process. 1 TX lane consumes 31.4 mW and occupies 0.06 mm2. Measured DQS has a swing of 230 mV and an RMS jitter of 770 fs at 10 Gb/s with 50 ฮฉ termination. And WCK has a swing of 185 mV and an RMS jitter of 894 fs at 10 Gb/s with 40 ฮฉ termination.์ž๋™ ํ…Œ์ŠคํŠธ ์žฅ๋น„ (ATE)์™€ ๋ฉ”๋ชจ๋ฆฌ ๊ฐ„์˜ ์†๋„ ์ฐจ์ด๋ฅผ ๊ทน๋ณตํ•˜๊ธฐ ์œ„ํ•ด ์™ธ์žฅ ์ž๊ฐ€ ํ…Œ์ŠคํŠธ (BOST) ๊ฐœ๋…์ด ๋„์ž…๋˜์—ˆ๋‹ค. ๋ณธ ๋…ผ๋ฌธ์€ LPDDR5์˜ BOST๋ฅผ ์œ„ํ•œ ์†ก์‹ ๊ธฐ ์„ค๊ณ„๋ฅผ ์ œ์‹œํ•œ๋‹ค. ์†ก์‹ ๊ธฐ๋Š” ATE์—์„œ ์ €์† ํด๋Ÿญ์„ ๋ฐ›์•„์„œ ๊ณ ์† DQS์™€ WCK๋ฅผ DRAM์— ์ „์†กํ•œ๋‹ค. ์ถœ๋ ฅ์— ํ•ญ์ƒ ํด๋Ÿญ ํ† ๊ธ€๋งŒ ์žˆ๋Š” ๊ฒƒ์€ ์•„๋‹ˆ๋ฏ€๋กœ ๋ฐ์ดํ„ฐ ํŒจํ„ด์ด ๋””์ง€ํ„ธ ๋ธ”๋ก์—์„œ ์ƒ์„ฑ๋œ๋‹ค. ๋˜ํ•œ ์œ„์ƒ ๋ณด๊ฐ„๊ธฐ๋กœ ์ถœ๋ ฅ์˜ ์œ„์ƒ์„ ์›ํ•˜๋Š” ๋Œ€๋กœ ์›€์ง์ธ๋‹ค. ์†ก์‹ ๊ธฐ์˜ ์•„๋‚ ๋กœ๊ทธ ๋ถ€๋ถ„์€ ์œ„์ƒ ๋ณด๊ฐ„๊ธฐ, ์‹œ๋ฆฌ์–ผ๋ผ์ด์ €, ๋“œ๋ผ์ด๋ฒ„๋กœ ๊ตฌ์„ฑ๋œ๋‹ค. ์œ„์ƒ ๋ณด๊ฐ„๊ธฐ์™€ ๋“œ๋ผ์ด๋ฒ„๋Š” ๊ณต๊ธ‰ ๋…ธ์ด์ฆˆ์— ๊ฒฌ๊ณ ํ•˜๋„๋ก ์ „๋ฅ˜ ๋ชจ๋“œ๋กœ ์„ค๊ณ„๋˜์—ˆ๋‹ค. ์‹œ๋ฆฌ์–ผ๋ผ์ด์ €์˜ ๋””๋ฐ”์ด๋”๊ฐ€ ์ƒˆ๋กญ๊ฒŒ ์ œ์•ˆ๋˜์–ด์„œ ๋ชจ๋“  ์ถœ๋ ฅ์˜ ํƒ€์ด๋ฐ์ด ๊ฐ™๋‹ค. ๋˜ํ•œ ATE์—์„œ ํ™œ์„ฑํ™” ์‹ ํ˜ธ๋ฅผ ๋ฐ›์•„์„œ DRAM์œผ๋กœ ์ถœ๋ ฅ์„ ์ „์†กํ•˜๋Š”๋ฐ ๊ฑธ๋ฆฌ๋Š” ์‹œ๊ฐ„๋„ ์ผ์ •ํ•˜๋‹ค. ๊ทธ ๊ฒฐ๊ณผ ์†ก์‹ ๊ธฐ๋Š” ๋ฐ์ดํ„ฐ ํŒจํ„ด์ด ์žˆ๋Š” DQS์™€ WCK๋ฅผ ์›ํ•˜๋Š” ํƒ€์ด๋ฐ์— DRAM์œผ๋กœ ์ „์†กํ•œ๋‹ค. ์ œ์•ˆ๋œ ์†ก์‹ ๊ธฐ๋Š” 40 nm CMOS ๊ณต์ •์œผ๋กœ ์ œ์ž‘๋˜์—ˆ๋‹ค. ์†ก์‹ ๊ธฐ์˜ ํ•˜๋‚˜์˜ ๋ ˆ์ธ์€ 31.4 mW๋ฅผ ์†Œ๋น„ํ•˜๊ณ  0.06mm2๋ฅผ ์ฐจ์ง€ํ•œ๋‹ค. ์ธก์ •๋œ DQS๋Š” 50 ฮฉ ํ„ฐ๋ฏธ๋„ค์ด์…˜์ผ ๋•Œ 10 Gb/s์—์„œ 230 mV์˜ ์Šค์œ™๊ณผ 770 fs์˜ RMS ์ง€ํ„ฐ๋ฅผ ๊ฐ€์ง„๋‹ค. ๊ทธ๋ฆฌ๊ณ  WCK๋Š” 40 ฮฉ ํ„ฐ๋ฏธ๋„ค์ด์…˜์ผ ๋•Œ 10 Gb/s์—์„œ 185 mV์˜ ์Šค์œ™๊ณผ 894 fs์˜ RMS ์ง€ํ„ฐ๋ฅผ ๊ฐ–๋Š”๋‹ค.ABSTRACT I CONTENTS II LIST OF FIGURES IV LIST OF TABLES VII CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 3 CHAPTER 2 BACKGROUND ON SERIAL LINK 4 2.1 OVERVIEW 4 2.2 BASIS OF MEMORY INTERFACE 7 2.3 BUILDING BLOCKS 9 2.3.1 PHASE INTERPOLATOR 9 2.3.2 SERIALIZER 14 2.3.3 DRIVER 18 CHAPTER 3 DESIGN OF TRANSMITTER FOR BOST 22 3.1 DESIGN CONSIDERATION 22 3.2 OVERALL ARCHITECTURE 24 3.3 CIRCUIT IMPLEMENTATION 26 3.3.1 CLOCK PATH 26 3.3.2 PHASE INTERPOLATOR 29 3.3.3 SERIALIZER 33 3.3.4 DRIVER 41 CHAPTER 4 MEASUREMENTS RESULTS 48 4.1 DIE PHOTOMICROGRAPH 48 4.2 MEASUREMENT SETUP 49 4.3 MEASUREMENT RESULTS 51 4.4 PERFORMANCE SUMMARY 57 CHAPTER 5 CONCLUSION 59 BIBLIOGRAPHY 60 ์ดˆ ๋ก 63์„

    ๋Œ€์—ญํญ ์ฆ๋Œ€ ๊ธฐ์ˆ ์„ ์ด์šฉํ•œ ์ „๋ ฅ ํšจ์œจ์  ๊ณ ์† ์†ก์‹  ์‹œ์Šคํ…œ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022.2. ์ •๋•๊ท .The high-speed interconnect at the datacenter is being more crucial as 400 Gb Ethernet standards are developed. At the high data rate, channel loss re-quires bandwidth extension techniques for transmitters, even for short-reach channels. On the other hand, as the importance of east-to-west connection is rising, the data center architectures are switching to spine-leaf from traditional ones. In this trend, the number of short-reach optical interconnect is expected to be dominant. The vertical-cavity surface-emitting laser (VCSEL) is a com-monly used optical modulator for short-reach interconnect. However, since VCSEL has low bandwidth and nonlinearity, the optical transmitter also needs bandwidth-increasing techniques. Additionally, the power consumption of data centers reaches a point of concern to affect climate change. Therefore, this the-sis focuses on high-speed, power-efficient transmitters for data center applica-tions. Before the presenting circuit design, bandwidth extension techniques such as fractionally-spaced feed-forward equalizer (FFE), on-chip transmission line, inductive peaking, and T-coil are mathematically analyzed for their effec-tiveness. For the first chip, a power and area-efficient pulse-amplitude modulation 4 (PAM-4) transmitter using 3-tap FFE based on a slow-wave transmission line is presented. A passive delay line is adopted for generating an equalizer tap to overcome the high clocking power consumption. The transmission line achieves a high slow-wave factor of 15 with double floating metal shields around the differential coplanar waveguide. The transmitter includes 4:1 multi-plexers (MUXs) and a quadrature clock generator for high-speed data genera-tion in a quarter-rate system. The 4:1 MUX utilizes a 2-UI pulse generator, and the input configuration is determined by qualitative analysis. The chip is fabri-cated in 65 nm CMOS technology and occupies an area of 0.151 mm2. The proposed transmitter system exhibits an energy efficiency of 3.03 pJ/b at the data rate of 48 Gb/s with PAM-4 signaling. The second chip presents a power-efficient PAM-4 VCSEL transmitter using 3-tap FFE and negative-k T-coil. The phase interpolators (PIs) generate frac-tionally-spaced FFE tap and correct quadrature phase error. The PAM-4 com-bining 8:1 MUX is proposed rather than combining at output driver with double 4:1 MUXs to reduce serializing power consumption. T-coils at the internal and output node increase the bandwidth and remove inter-symbol interference (ISI). The negative-k T-coil at the output network increases the bandwidth 1.61 times than without T-coil. The VCSEL driver is placed on the high VSS domain for anode driving and power reduction. The chip is fabricated in 40 nm CMOS technology. The proposed VCSEL transmitter operates up to 48 Gb/s NRZ and 64 Gb/s PAM-4 with the power efficiency of 3.03 pJ/b and 2.09 pJ/b, respec-tively.400Gb ์ด๋”๋„ท ํ‘œ์ค€์ด ๊ฐœ๋ฐœ๋จ์— ๋”ฐ๋ผ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ์˜ ๊ณ ์† ์ƒํ˜ธ ์—ฐ๊ฒฐ์ด ๋”์šฑ ์ค‘์š”ํ•ด์ง€๊ณ  ์žˆ๋‹ค. ๋†’์€ ๋ฐ์ดํ„ฐ ์†๋„์—์„œ์˜ ์ฑ„๋„ ์†์‹ค์— ์˜ํ•ด ๋‹จ๊ฑฐ๋ฆฌ ์ฑ„๋„์˜ ๊ฒฝ์šฐ์—๋„ ์†ก์‹ ๊ธฐ์— ๋Œ€ํ•œ ๋Œ€์—ญํญ ํ™•์žฅ ๊ธฐ์ˆ ์ด ํ•„์š”ํ•˜๋‹ค. ํ•œํŽธ, ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ๋‚ด ๋™-์„œ ์—ฐ๊ฒฐ์˜ ์ค‘์š”์„ฑ์ด ๋†’์•„์ง€๋ฉด์„œ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ์•„ํ‚คํ…์ฒ˜๊ฐ€ ๊ธฐ์กด์˜ ์•„ํ‚คํ…์ฒ˜์—์„œ ์ŠคํŒŒ์ธ-๋ฆฌํ”„๋กœ ์ „ํ™˜๋˜๊ณ  ์žˆ๋‹ค. ์ด๋Ÿฌํ•œ ์ถ”์„ธ์—์„œ ๋‹จ๊ฑฐ๋ฆฌ ๊ด‘ํ•™ ์ธํ„ฐ์ปค๋„ฅํŠธ์˜ ์ˆ˜๊ฐ€ ์ ์ฐจ ์šฐ์„ธํ•ด์งˆ ๊ฒƒ์œผ๋กœ ์˜ˆ์ƒ๋œ๋‹ค. ์ˆ˜์ง ์บ๋น„ํ‹ฐ ํ‘œ๋ฉด ๋ฐฉ์ถœ ๋ ˆ์ด์ €(VCSEL)๋Š” ์ผ๋ฐ˜์ ์œผ๋กœ ๋‹จ๊ฑฐ๋ฆฌ ์ƒํ˜ธ ์—ฐ๊ฒฐ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋˜๋Š” ๊ด‘ํ•™ ๋ชจ๋“ˆ๋ ˆ์ดํ„ฐ์ด๋‹ค. VCSEL์€ ๋‚ฎ์€ ๋Œ€์—ญํญ๊ณผ ๋น„์„ ํ˜•์„ฑ์„ ๊ฐ€์ง€๊ณ  ์žˆ๊ธฐ ๋•Œ๋ฌธ์—, ๊ด‘ ์†ก์‹ ๊ธฐ๋„ ๋Œ€์—ญํญ ์ฆ๊ฐ€ ๊ธฐ์ˆ ์„ ํ•„์š”๋กœ ํ•œ๋‹ค. ๋˜ํ•œ, ๋ฐ์ดํ„ฐ ์„ผํ„ฐ์˜ ์ „๋ ฅ ์†Œ๋น„๋Š” ๊ธฐํ›„ ๋ณ€ํ™”์— ์˜ํ–ฅ์„ ๋ฏธ์น  ์ˆ˜ ์žˆ๋Š” ์šฐ๋ ค ์ง€์ ์— ๋„๋‹ฌํ–ˆ๋‹ค. ๋”ฐ๋ผ์„œ, ๋ณธ ๋…ผ๋ฌธ์€ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ์‘์šฉ์„ ์œ„ํ•œ ๊ณ ์† ์ „๋ ฅ ํšจ์œจ์ ์ธ ์†ก์‹ ๊ธฐ์— ์ดˆ์ ์„ ๋งž์ถ”๊ณ  ์žˆ๋‹ค. ํšŒ๋กœ ์„ค๊ณ„๋ฅผ ์ œ์‹œํ•˜๊ธฐ ์ „์—, ๋ถ€๋ถ„ ๊ฐ„๊ฒฉ ํ”ผ๋“œ-ํฌ์›Œ๋“œ ์ดํ€„๋ผ์ด์ € (FFE), ์˜จ์นฉ ์ „์†ก์„ ๋กœ, ์ธ๋•ํ„ฐ, T-์ฝ”์ผ๊ณผ ๊ฐ™์€ ๋Œ€์—ญํญ ํ™•์žฅ ๊ธฐ์ˆ ์„ ์ˆ˜ํ•™์ ์œผ๋กœ ๋ถ„์„ํ•œ๋‹ค. ์ฒซ ๋ฒˆ์งธ ์นฉ์€ ์ €์†ํŒŒ ์ „์†ก์„ ๋กœ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ 3-ํƒญ FFE๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ์ „๋ ฅ ๋ฐ ๋ฉด์  ํšจ์œจ์ ์ธ ํŽ„์Šค-์ง„ํญ-๋ณ€์กฐ 4(PAM-4) ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์‹œํ•œ๋‹ค. ๋†’์€ ํด๋Ÿญ ์ „๋ ฅ ์†Œ๋น„๋ฅผ ๊ทน๋ณตํ•˜๊ธฐ ์œ„ํ•ด ์ดํ€„๋ผ์ด์ € ํƒญ ์ƒ์„ฑ์„ ์œ„ํ•ด ์ˆ˜๋™์†Œ์ž ์ง€์—ฐ ๋ผ์ธ์„ ์ฑ„ํƒํ–ˆ๋‹ค. ์ „์†ก ๋ผ์ธ์€ ์ฐจ๋™ ๋™์ผํ‰๋ฉด๋„ํŒŒ๊ด€ ์ฃผ์œ„์— ์ด์ค‘ ํ”Œ๋กœํŒ… ๊ธˆ์† ์ฐจํ๋ฅผ ์‚ฌ์šฉํ•˜์—ฌ 15์˜ ๋†’์€ ์ „๋‹ฌ์†๋„ ๊ฐ์‡ ๋ฅผ ๋‹ฌ์„ฑํ•œ๋‹ค. ์†ก์‹ ๊ธฐ์—๋Š” 4:1 ๋ฉ€ํ‹ฐํ”Œ๋ ‰์„œ(MUX)์™€ 4-์œ„์ƒ ํด๋Ÿญ ์ƒ์„ฑ๊ธฐ๊ฐ€ ํฌํ•จ๋˜์–ด ์žˆ๋‹ค. 4:1 MUX๋Š” 2-UI ํŽ„์Šค ๋ฐœ์ƒ๊ธฐ๋ฅผ ์‚ฌ์šฉํ•˜๋ฉฐ, ์ •์„ฑ ๋ถ„์„์— ์˜ํ•ด ์ž…๋ ฅ ๊ตฌ์„ฑ์ด ๊ฒฐ์ •๋œ๋‹ค. ์ด ์นฉ์€ 65 nm CMOS ๊ธฐ์ˆ ๋กœ ์ œ์ž‘๋˜์—ˆ์œผ๋ฉฐ 0.151 mm2์˜ ๋ฉด์ ์„ ์ฐจ์ง€ํ•œ๋‹ค. ์ œ์•ˆ๋œ ์†ก์‹ ๊ธฐ ์‹œ์Šคํ…œ์€ PAM-4 ์‹ ํ˜ธ์™€ ํ•จ๊ป˜ 48 Gb/s์˜ ๋ฐ์ดํ„ฐ ์†๋„์—์„œ 3.03 pJ/b์˜ ์—๋„ˆ์ง€ ํšจ์œจ์„ ๋ณด์—ฌ์ค€๋‹ค. ๋‘ ๋ฒˆ์งธ ์นฉ์—์„œ๋Š” 3-ํƒญ FFE ๋ฐ ์—ญํšŒ์ „ T-์ฝ”์ผ์„ ์‚ฌ์šฉํ•˜๋Š” ์ „๋ ฅ ํšจ์œจ์ ์ธ PAM-4 VCSEL ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์‹œํ•œ๋‹ค. ์œ„์ƒ ๋ณด๊ฐ„๊ธฐ(PI)๋Š” ๋ถ€๋ถ„ ๊ฐ„๊ฒฉ FFE ํƒญ์„ ์ƒ์„ฑํ•˜๊ณ  4-์œ„์ƒ ํด๋Ÿญ ์˜ค๋ฅ˜๋ฅผ ์ˆ˜์ •ํ•˜๋Š” ๋ฐ ์‚ฌ์šฉ๋œ๋‹ค. ์ง๋ ฌํ™” ์ „๋ ฅ ์†Œ๋น„๋ฅผ ์ค„์ด๊ธฐ ์œ„ํ•ด ์ถœ๋ ฅ ๋“œ๋ผ์ด๋ฒ„์—์„œ MSB์™€ LSB๋ฅผ ๋‘ ๊ฐœ์˜ 4:1 MUX๋ฅผ ํ†ตํ•ด ๊ฒฐํ•ฉํ•˜๋Š” ๋Œ€์‹  8:1 MUX๋ฅผ ํ†ตํ•ด PAM-4๋กœ ๊ฒฐํ•ฉํ•˜๋Š” ํšŒ๋กœ๊ฐ€ ์ œ์•ˆ๋œ๋‹ค. ๋‚ด๋ถ€ ๋ฐ ์ถœ๋ ฅ ๋…ธ๋“œ์—์„œ T-์ฝ”์ผ์€ ๋Œ€์—ญํญ์„ ์ฆ๊ฐ€์‹œํ‚ค๊ณ  ๊ธฐํ˜ธ ๊ฐ„ ๊ฐ„์„ญ(ISI)์„ ์ œ๊ฑฐํ•œ๋‹ค. ์ถœ๋ ฅ ๋„คํŠธ์›Œํฌ์—์„œ ์—ญํšŒ์ „ T-์ฝ”์ผ์€ T-์ฝ”์ผ์ด ์—†๋Š” ๊ฒฝ์šฐ๋ณด๋‹ค ๋Œ€์—ญํญ์„ 1.61๋ฐฐ ์ฆ๊ฐ€์‹œํ‚จ๋‹ค. VCSEL ๋“œ๋ผ์ด๋ฒ„๋Š” ์–‘๊ทน ๊ตฌ๋™ ๋ฐ ์ „๋ ฅ ๊ฐ์†Œ๋ฅผ ์œ„ํ•ด ๋†’์€ VSS ๋„๋ฉ”์ธ์— ๋ฐฐ์น˜๋œ๋‹ค. ์ด ์นฉ์€ 40 nm CMOS ๊ธฐ์ˆ ๋กœ ์ œ์ž‘๋˜์—ˆ๋‹ค. ์ œ์•ˆ๋œ VCSEL ์†ก์‹ ๊ธฐ๋Š” ๊ฐ๊ฐ 3.03pJ/b์™€ 2.09pJ/b์˜ ์ „๋ ฅ ํšจ์œจ๋กœ ์ตœ๋Œ€ 48Gb/s NRZ์™€ 64Gb/s PAM-4๊นŒ์ง€ ์ž‘๋™ํ•œ๋‹ค.ABSTRACT I CONTENTS III LIST OF FIGURES V LIST OF TABLES IX CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 BACKGROUND OF HIGH-SPEED INTERFACE 6 2.1 OVERVIEW 6 2.2 BASIS OF DATA CENTER ARCHITECTURE 9 2.3 SHORT-REACH INTERFACE STANDARDS 12 2.4 ANALYSES OF BANDWIDTH EXTENSION TECHNIQUES 16 2.4.1 FRACTIONALLY-SPACED FFE 16 2.4.2 TRANSMISSION LINE 21 2.4.3 INDUCTOR 24 2.4.4 T-COIL 33 CHAPTER 3 DESIGN OF 48 GB/S PAM-4 ELECTRICAL TRANSMITTER IN 65 NM CMOS 43 3.1 OVERVIEW 43 3.2 FFE BASED ON DOUBLE-SHIELDED COPLANAR WAVEGUIDE 46 3.2.1 BASIC CONCEPT 46 3.2.2 PROPOSED DOUBLE-SHIELDED COPLANAR WAVEGUIDE 47 3.3 DESIGN CONSIDERATION ON 4:1 MUX 50 3.4 PROPOSED PAM-4 ELECTRICAL TRANSMITTER 53 3.5 MEASUREMENT 57 CHAPTER 4 DESIGN OF 64 GB/S PAM-4 OPTICAL TRANSMITTER IN 40 NM CMOS 64 4.1 OVERVIEW 64 4.2 DESIGN CONSIDERATION OF OPTICAL TRANSMITTER 66 4.3 PROPOSED PAM-4 VCSEL TRANSMITTER 69 4.4 MEASUREMENT 82 CHAPTER 5 CONCLUSIONS 88 BIBLIOGRAPHY 90 ์ดˆ ๋ก 101๋ฐ•
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