169 research outputs found

    Ultra-Low Power Transmitter and Power Management for Internet-of-Things Devices

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    Two of the most critical components in an Internet-of-Things (IoT) sensing and transmitting node are the power management unit (PMU) and the wireless transmitter (Tx). The desire for longer intervals between battery replacements or a completely self-contained, battery-less operation via energy harvesting transducers and circuits in IoT nodes demands highly efficient integrated circuits. This dissertation addresses the challenge of designing and implementing power management and Tx circuits with ultra-low power consumption to enable such efficient operation. The first part of the dissertation focuses on the study and design of power management circuits for IoT nodes. This opening portion elaborates on two different areas of the power management field: Firstly, a low-complexity, SPICE-based model for general low dropout (LDO) regulators is demonstrated. The model aims to reduce the stress and computation times in the final stages of simulation and verification of Systems-on-Chip (SoC), including IoT nodes, that employ large numbers of LDOs. Secondly, the implementation of an efficient PMU for an energy harvesting system based on a thermoelectric generator transducer is discussed. The PMU includes a first-in-its-class LDO with programmable supply noise rejection for localized improvement in the suppression. The second part of the dissertation addresses the challenge of designing an ultra- low power wireless FSK Tx in the 900 MHz ISM band. To reduce the power consumption and boost the Tx energy efficiency, a novel delay cell exploiting current reuse is used in a ring-oscillator employed as the local oscillator generator scheme. In combination with an edge-combiner PA, the Tx showed a measured energy efficiency of 0.2 nJ/bit and a normalized energy efficiency of 3.1 nJ/(bit∙mW) when operating at output power levels up to -10 dBm and data rates of 3 Mbps. To close this dissertation, the implementation of a supply-noise tolerant BiCMOS ring-oscillator is discussed. The combination of a passive, high-pass feedforward path from the supply to critical nodes in the selected delay cell and a low cost LDO allow the oscillator to exhibit power supply noise rejection levels better than –33 dB in experimental results

    Analog Front-End Circuits for Massive Parallel 3-D Neural Microsystems.

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    Understanding dynamics of the brain has tremendously improved due to the progress in neural recording techniques over the past five decades. The number of simultaneously recorded channels has actually doubled every 7 years, which implies that a recording system with a few thousand channels should be available in the next two decades. Nonetheless, a leap in the number of simultaneous channels has remained an unmet need due to many limitations, especially in the front-end recording integrated circuits (IC). This research has focused on increasing the number of simultaneously recorded channels and providing modular design approaches to improve the integration and expansion of 3-D recording microsystems. Three analog front-ends (AFE) have been developed using extremely low-power and small-area circuit techniques on both the circuit and system levels. The three prototypes have investigated some critical circuit challenges in power, area, interface, and modularity. The first AFE (16-channels) has optimized energy efficiency using techniques such as moderate inversion, minimized asynchronous interface for data acquisition, power-scalable sampling operation, and a wide configuration range of gain and bandwidth. Circuits in this part were designed in a 0.25μm CMOS process using a 0.9-V single supply and feature a power consumption of 4μW/channel and an energy-area efficiency of 7.51x10^15 in units of J^-1Vrms^-1mm^-2. The second AFE (128-channels) provides the next level of scaling using dc-coupled analog compression techniques to reject the electrode offset and reduce the implementation area further. Signal processing techniques were also explored to transfer some computational power outside the brain. Circuits in this part were designed in a 180nm CMOS process using a 0.5-V single supply and feature a power consumption of 2.5μW/channel, and energy-area efficiency of 30.2x10^15 J^-1Vrms^-1mm^-2. The last AFE (128-channels) shows another leap in neural recording using monolithic integration of recording circuits on the shanks of neural probes. Monolithic integration may be the most effective approach to allow simultaneous recording of more than 1,024 channels. The probe and circuits in this part were designed in a 150 nm SOI CMOS process using a 0.5-V single supply and feature a power consumption of only 1.4μW/channel and energy-area efficiency of 36.4x10^15 J^-1Vrms^-1mm^-2.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/98070/1/ashmouny_1.pd

    Design of a Quasi-Adiabatic Current-Mode Neurostimulator Integrated Circuit for Deep Brain Stimulation

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    Electrical stimulation of neural tissues is a valuable tool in the retinal prosthesis, cardiac pacemakers, and Deep Brain Stimulation (DBS). DBS is being to treat a growing number of neurological disorders, such as movement disorder, epilepsy, and Parkinson’s disease. The role of the electronic stimulator is paramount in such application, and significant design challenges are to be met to enhance safety and reliability. A current-source based stimulator can accurately deliver a charge-balanced stimulus maintaining patient safety. In this thesis, a general-purpose current-mode neurostimulator (CMS) based upon a new quasi-adiabatic driving technique is proposed which can theoretically achieve more than 80% efficiency with the help of a dynamic high voltage supply (DHVS) as opposed to most conventional general-purpose CMS having less than 25% efficiency. The high-voltage supply is required to withstand the voltage seen across the electrodes (>10V) due to the time-varying impedance presented by the electrode-tissue interface. The overall efficiency of the designed CMS is limited by the efficiency of the DHVS. A HVDD of 15V is created by the DHVS from an input voltage (VDD) of 3V. The DHVS circuit is made by cascading five charge pump circuits using the AMI 0.5µm CMOS process. It can maintain more than 60% efficiency for a wide range of load current from 25µA to 1.4mA, with peak efficiency at 67% and this is comparable with existing specific-purpose state-of-the-art high-voltage supplies used in a current stimulator. The stimulator designed in this thesis employs a new efficient charge recycling mechanism to enhance the overall efficiency, compared to the existing state-of-the-art CMSs. Thus, the overall CMS efficiency is improved by 20% to 25%. A current source, programmable by 8-bit digital input, is also designed which has an output impedance greater than 2MΩ with a dropout voltage of only 120mV. Measurements show voltage compliance exceeding +/-15V when driving a biphasic current stimulus of 10µA to 2.5mA through a simplified R-C model of the electrode-tissue interface. The voltage compliance is defined as the maximum voltage a stimulator can apply across the electrodes to achieve neural stimulation

    Advances in Bioengineering

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    The technological approach and the high level of innovation make bioengineering extremely dynamic and this forces researchers to continuous updating. It involves the publication of the results of the latest scientific research. This book covers a wide range of aspects and issues related to advances in bioengineering research with a particular focus on innovative technologies and applications. The book consists of 13 scientific contributions divided in four sections: Materials Science; Biosensors. Electronics and Telemetry; Light Therapy; Computing and Analysis Techniques

    Low power digital baseband core for wireless Micro-Neural-Interface using CMOS sub/near-threshold circuit

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    This thesis presents the work on designing and implementing a low power digital baseband core with custom-tailored protocol for wirelessly powered Micro-Neural-Interface (MNI) System-on-Chip (SoC) to be implanted within the skull to record cortical neural activities. The core, on the tag end of distributed sensors, is designed to control the operation of individual MNI and communicate and control MNI devices implanted across the brain using received downlink commands from external base station and store/dump targeted neural data uplink in an energy efficient manner. The application specific protocol defines three modes (Time Stamp Mode, Streaming Mode and Snippet Mode) to extract neural signals with on-chip signal conditioning and discrimination. In Time Stamp Mode, Streaming Mode and Snippet Mode, the core executes basic on-chip spike discrimination and compression, real-time monitoring and segment capturing of neural signals so single spike timing as well as inter-spike timing can be retrieved with high temporal and spatial resolution. To implement the core control logic using sub/near-threshold logic, a novel digital design methodology is proposed which considers INWE (Inverse-Narrow-Width-Effect), RSCE (Reverse-Short-Channel-Effect) and variation comprehensively to size the transistor width and length accordingly to achieve close-to-optimum digital circuits. Ultra-low-power cell library containing 67 cells including physical cells and decoupling capacitor cells using the optimum fingers is designed, laid-out, characterized, and abstracted. A robust on-chip sense-amp-less SRAM memory (8X32 size) for storing neural data is implemented using 8T topology and LVT fingers. The design is validated with silicon tapeout and measurement shows the digital baseband core works at 400mV and 1.28 MHz system clock with an average power consumption of 2.2 μW, resulting in highest reported communication power efficiency of 290Kbps/μW to date

    On-Chip Analog Circuit Design Using Built-In Self-Test and an Integrated Multi-Dimensional Optimization Platform

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    Nowadays, the rapid development of system-on-chip (SoC) market introduces tremendous complexity into the integrated circuit (IC) design. Meanwhile, the IC fabrication process is scaling down to allow higher density of integration but makes the chips more sensitive to the process-voltage-temperature (PVT) variations. A successful IC product not only imposes great pressure on the IC designers, who have to handle wider variations and enforce more design margins, but also challenges the test procedure, leading to more check points and longer test time. To relax the designers’ burden and reduce the cost of testing, it is valuable to make the IC chips able to test and tune itself to some extent. In this dissertation, a fully integrated in-situ design validation and optimization (VO) hardware for analog circuits is proposed. It implements in-situ built-in self-test (BIST) techniques for analog circuits. Based on the data collected from BIST, the error between the measured and the desired performance of the target circuit is evaluated using a cost function. A digital multi-dimensional optimization engine is implemented to adaptively adjust the analog circuit parameters, seeking the minimum value of the cost function and achieving the desired performance. To verify this concept, study cases of a 2nd/4th active-RC band-pass filter (BPF) and a 2nd order Gm-C BPF, as well as all BIST and optimization blocks, are adopted on-chip. Apart from the VO system, several improved BIST techniques are also proposed in this dissertation. A single-tone sinusoidal waveform generator based on a finite-impulse-response (FIR) architecture, which utilizes an optimization algorithm to enhance its spur free dynamic range (SFDR), is proposed. It achieves an SFDR of 59 to 70 dBc from 150 to 850 MHz after the optimization procedure. A low-distortion current-steering two-tone sinusoidal signal synthesizer based on a mixing-FIR architecture is also proposed. The two-tone synthesizer extends the FIR architecture to two stages and implements an up-conversion mixer to generate the two tones, achieving better than -68 dBc IM3 below 480 MHz LO frequency without calibration. Moreover, an on-chip RF receiver linearity BIST methodology for continuous and discrete-time hybrid baseband chain is proposed. The proposed receiver chain implements a charge-domain FIR filter to notch the two excitation signals but expose the third order intermodulation (IM3) tones. It simplifies the linearity measurement procedure–using a power detector is enough to analyze the receiver’s linearity. Finally, a low cost fully digital built-in analog tester for linear-time-invariant (LTI) analog blocks is proposed. It adopts a time-to-digital converter (TDC) to measure the delays corresponded to a ramp excitation signal and is able to estimate the pole or zero locations of a low-pass LTI system

    Silicon Photonic Modulators for Low-power Applications

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    In this book, silicon photonic integrated circuits are combined with electro-optic organic materials for realizing energy-efficient modulators with unprecedented performance. These silicon-organic hybrid Mach-Zehnder modulators feature a compact size, sub-Volt drive voltages, and they support data rates up to 84 Gbit/s. In addition, a wet chemical waveguide fabrication scheme and an efficient fiber-chip coupling scheme are presented

    Technical design of the phase I Mu3e experiment

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    The Mu3e experiment aims to find or exclude the lepton flavour violating decay μ→eee at branching fractions above 10−16. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of 2⋅10−15. We present an overview of all aspects of the technical design and expected performance of the phase I Mu3e detector. The high rate of up to 108 muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements

    Development of RF CMOS receiver front-ends for ultrawideband

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    Ultra-Wideband (UWB) technology has become one of the hottest topics in wireless communications, for it provides cost-effective, power-efficient, high bandwidth solution for relaying data in the immediate area (up to 10 meters). This work demonstrates two different solutions for the RF front-end designs in the UWB receivers, one is distributed topology, and the other is based on traditional lumped element topology. The distributed amplifier is one of the attractive candidates for UWB Low Noise Amplifier (LNA). The design, analysis and operation of the distributed amplifiers will be presented. A distributed amplifier is designed with Coplanar Waveguide (CPW) transmission lines in 0.25-μm CMOS process for time domain UWB applications. New design techniques and new topologies are developed to enhance the power-efficiency and reduce the chip area. A compact and high performance distributed amplifier with Patterned Grounded Shield (PGS) inductors is developed in 0.25-μm CMOS process. The amplifier has a measurement result of 7.2dB gain, 4.2-6dB noise figure, and less than -10dB return loss through 0-11GHz. A new distributed amplifier implementing cascade common source gain cells is presented in 0.18-μm CMOS. The new amplifier demonstrates a high gain of 16dB at a power consumption of 100mW, and a gain of 10dB at a low power consumption of 19mW. A UWB LNA utilizing resistive shunt feedback technique is reported in 0.18-μm CMOS process. The measurement results of the UWB LNA demonstrate a maximum gain of 10.5dB and a noise figure of 3.3-4.5dB from 3-9.5GHz, while only consuming 9mW power. Based on the distributed amplifier and resistive shunt-feedback amplifier designs, two UWB RF front-ends are developed. One is a distributed LNA-Mixer. Unlike the conventional distributed mixer, which can only deliver low gain and high noise figure, the proposed distributed LNA-Mixer demonstrates 12-14dB gain ,4-5dB noise figure and higher than 10dB return loss at RF and LO ports over 2-16GHz. To overcome the power consumption and chip area problems encountered in distributed circuits, another UWB RF front-end is also designed with lumped elements. This front-end, employing resistive shunt-feedback technique into its LNA design, can achieve a gain of 12dB and noise figure of 8-10dB through 3-10GHz, the return loss of less than -10dB from 3- 10GHz at RF port, and less than -7dB at LO port, while only consuming 25mA current from 1.8V voltage supply

    Solid State Circuits Technologies

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    The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book
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