CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

Digitally Interfaced Analog Correlation Filter System for Object Tracking Applications

Advanced correlation filters have been employed in a wide variety of image processing and pattern recognition applications such as automatic target recognition and biometric recognition. Among those, object recognition and tracking have received more attention recently due to their wide range of applications such as autonomous cars, automated surveillance, human-computer interaction, and vehicle navigation.Although digital signal processing has long been used to realize such computational systems, they consume extensive silicon area and power. In fact, computational tasks that require low to moderate signal-to-noise ratios are more efficiently realized in analog than digital. However, analog signal processing has its own caveats. Mainly, noise and offset accumulation which degrades the accuracy, and lack of a scalable and standard input/output interface capable of managing a large number of analog data.Two digitally-interfaced analog correlation filter systems are proposed. While digital interfacing provided a standard and scalable way of communication with pre- and post-processing blocks without undermining the energy efficiency of the system, the multiply-accumulate operations were performed in analog. Moreover, non-volatile floating-gate memories are utilized as storage for coefficients. The proposed systems incorporate techniques to reduce the effects of analog circuit imperfections.The first system implements a 24x57 Gilbert-multiplier-based correlation filter. The I/O interface is implemented with low-power D/A and A/D converters and a correlated double sampling technique is implemented to reduce offset and lowfrequency noise at the output of analog array. The prototype chip occupies an area of 3.23mm2 and demonstrates a 25.2pJ/MAC energy-efficiency at 11.3 kVec/s and 3.2% RMSE.The second system realizes a 24x41 PWM-based correlation filter. Benefiting from a time-domain approach to multiplication, this system eliminates the need for explicit D/A and A/D converters. Careful utilization of clock and available hardware resources in the digital I/O interface, along with application of power management techniques has significantly reduced the circuit complexity and energy consumption of the system. Additionally, programmable transconductance amplifiers are incorporated at the output of the analog array for offset and gain error calibration. The prototype system occupies an area of 0.98mm2 and is expected to achieve an outstanding energy-efficiency of 3.6pJ/MAC at 319kVec/s with 0.28% RMSE

A 0.01mm2, 0.4V-VDD, 4.5nW-Power DC-Coupled Digital Acquisition Front-End Based on Time-Multiplexed Digital Differential Amplification

A reconfigurable, high-impedance, DC-coupled low-frequency digital acquisition front-end (DAFE) suitable to operate under a power supply voltage ranging from 0.2 to IV down to 600 pW power is presented in this paper. Matching-indifferent DC accuracy over a rail-to-rail input range is uniquely achieved by the new time-multiplexed digital differential amplification technique at ultra-low area and without chopping and auto-zeroing. A 180 nm testchip of the proposed DAFE occupies 0.00945 mm 2 and draws 4.5 nW at a 0.4 V supply, has a 120 Hz gain-bandwidth product, with an in-band input noise of 11.3 µV r ms , a 137 µV input offset voltage standard deviation, 65.7dB CMRR, 63.8dB PSRR, and provides a 46.5dB-SFDR, 6.9 bit-ENOB digitized output at -12 dBFS

LArPix: Demonstration of low-power 3D pixelated charge readout for liquid argon time projection chambers

We report the demonstration of a low-power pixelated readout system designed for three-dimensional ionization charge detection and digital readout of liquid argon time projection chambers (LArTPCs). Unambiguous 3D charge readout was achieved using a custom-designed system-on-a-chip ASIC (LArPix) to uniquely instrument each pad in a pixelated array of charge-collection pads. The LArPix ASIC, manufactured in 180 nm bulk CMOS, provides 32 channels of charge-sensitive amplification with self-triggered digitization and multiplexed readout at temperatures from 80 K to 300 K. Using an 832-channel LArPix-based readout system with 3 mm spacing between pads, we demonstrated low-noise ($<$500 e$^-$ RMS equivalent noise charge) and very low-power ($<$100 $\mu$W/channel) ionization signal detection and readout. The readout was used to successfully measure the three-dimensional ionization distributions of cosmic rays passing through a LArTPC, free from the ambiguities of existing projective techniques. The system design relies on standard printed circuit board manufacturing techniques, enabling scalable and low-cost production of large-area readout systems using common commercial facilities. This demonstration overcomes a critical technical obstacle for operation of LArTPCs in high-occupancy environments, such as the near detector site of the Deep Underground Neutrino Experiment (DUNE).Comment: 19 pages, 10 figures, 1 ancillary animation. V3 includes minor revisions based on referee comment

Efficient and Interference-Resilient Wireless Connectivity for IoT Applications

With the coming of age of the Internet of Things (IoT), demand on ultra-low power (ULP) and low-cost radios will continue to boost tremendously. The Bluetooth-Low-energy (BLE) standard provides a low power solution to connect IoT nodes with mobile devices, however, the power of maintaining a connection with a reasonable latency remains the limiting factor in defining the lifetime of event-driven BLE devices. BLE radio power consumption is in the milliwatt range and can be duty cycled for average powers around 30μW, but at the expense of long latency. Furthermore, wireless transceivers traditionally perform local oscillator (LO) calibration using an external crystal oscillator (XTAL) that adds significant size and cost to a system. Removing the XTAL enables a true single-chip radio, but an alternate means for calibrating the LO is required. Innovations in both the system architecture and circuits implementation are essential for the design of truly ubiquitous receivers for IoT applications. This research presents two porotypes as back-channel BLE receivers, which have lower power consumption while still being robust in the presents of interference and able to receive back-channel message from BLE compliant transmitters. In addition, the first crystal-less transmitter with symmetric over-the-air clock recovery compliant with the BLE standard using a GFSK-Modulated BLE Packet is presented.PHDElectrical and Computer EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/162942/1/abdulalg_1.pd

Speech Processing Front-end in Low-power Hardware

The objective of this work is to develop analog integrated circuits to serve as low-power auditory front-ends in signal processing systems. An analog front-end can be used for feature-extraction to reduce the requirements of the digital back-end, or to detect and call attention to compelling characteristics of a signal while the back-end is in sleep mode. Such a front-end should be advantageous for speech recognition, noise suppression, auditory scene analysis, hearing prostheses, biological modeling, or hardware-based event detection.;This work presents a spectral decomposition system, which consists of a bandpass filter bank with sub-band magnitude detection. The bandpass filter is low-power and each channel can be individually programmed for different quality factors and passband gains. The novel magnitude detector has a 68 decibel dynamic range, excellent tracking capability, and consumes less than a microwatt of power. The system, which was fabricated in a 0.18 micron process, consists of a 16-channel filter bank and a variety of sub-band computational elements

Integrated circuit design for implantable neural interfaces

Progress in microfabrication technology has opened the way for new possibilities in neuroscience and medicine. Chronic, biocompatible brain implants with recording and stimulation capabilities provided by embedded electronics have been successfully demonstrated. However, more ambitious applications call for improvements in every aspect of existing implementations. This thesis proposes two prototypes that advance the field in significant ways. The first prototype is a neural recording front-end with spectral selectivity capabilities that implements a design strategy that leads to the lowest reported power consumption as compared to the state of the art. The second one is a bidirectional front-end for closed-loop neuromodulation that accounts for self-interference and impedance mismatch thus enabling simultaneous recording and stimulation. The design process and experimental verification of both prototypes is presented herein

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2