Design methods for 60GHz beamformers in CMOS

The 60GHz band is promising for applications such as high-speed short-range wireless personal-area network (WPAN), real-time video streaming at rates of several-Gbps, automotive radar, and mm-Wave imaging, since it provides a large amount of bandwidth that can freely (i.e. without a license) be used worldwide. However, transceivers at 60GHz pose several additional challenges over microwave transceivers. In addition to the circuit design challenges of implementing high performance 60GHz RF circuits in mainstream CMOS technology, the path loss at 60GHz is significantly higher than at microwave frequencies because of the smaller size of isotropic antennas. This can be overcome by using phased array technology. This thesis studies the new concepts and design techniques that can be used for 60GHz phased array systems. It starts with an overview of various applications at mm-wave frequencies, such as multi-Gbps radio at 60GHz, automotive radar and millimeter-wave imaging. System considerations of mm-wave receivers and transmitters are discussed, followed by the selection of a CMOS technology to implement millimeter-wave (60GHz) systems. The link budget of a 60GHz WPAN is analyzed, which leads to the introduction of phased array techniques to improve system performance. Different phased array architectures are studied and compared. The system requirements of phase shifters are discussed. Several types of conventional RF phase shifters are reviewed. A 60GHz 4-bit passive phase shifter is designed and implemented in a 65nm CMOS technology. Measurement results are presented and compared to published prior art. A 60GHz 4-bit active phase shifter is designed and integrated with low noise amplifier and combiner for a phased array receiver. This is implemented in a 65nm CMOS technology, and the measurement results are presented. The design of a 60GHz 4-bit active phase shifter and its integration with power amplifier is also presented for a phased array transmitter. This is implemented in a 65nm CMOS technology. The measurement results are also presented and compared to reported prior art. The integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package is investigated. Experimental results are presented and discussed

Architectures, Antennas and Circuits for Millimeter-wave Wireless Full-Duplex Applications

Demand for wireless network capacity keeps growing exponentially every year, as a result a 1000-fold increase in data traffic is projected over the next 10 years in the context of 5G wireless networks. Solutions for delivering the 1000-fold increase in capacity fall into three main categories: deploying smaller cells, allocating more spectrum and improving spectral efficiency of wireless systems. Smaller cells at RF frequencies (1-6GHz) are unlikely to deliver the demanded capacity increase. On the other hand, millimeter-wave spectrum (frequencies over 24GHz) offers wider, multi-GHz channel bandwidths, and therefore has gained significant research interest as one of the most promising solutions to address the data traffic demands of 5G. Another disruptive technology is full-duplex which breaks a century-old assumption in wireless communication, by simultaneous transmission and reception on the same frequency channel. In doing so, full-duplex offers many benefits for wireless networks, including an immediate spectral efficiency improvement in the physical layer. Although FD promises great benefits, self-interference from the transmitter to its own receiver poses a fundamental challenge. The self-interference can be more than a billion times stronger than the desired signal and must be suppressed below the receiver noise floor. In recent years, there has been some research efforts on fully-integrated full-duplex RF transceivers, but mm-wave fully-integrated full-duplex systems, are still in their infancy. This dissertation presents novel architectures, antenna and circuit techniques to merge two exciting technologies, mm-wave and full-duplex, which can potentially offer the dual benefits of wide bandwidths and improved spectral efficiency. To this end, two different antenna interfaces, namely a wideband reconfigurable T/R antenna pair with polarization-based antenna cancellation and an mm-wave fully-integrated magnetic-free non-reciprocal circulator, are presented. The polarization-based antenna cancellation is employed in conjunction with the RF and digital cancellation to design a 60GHz full-duplex 45nm SOI CMOS transceiver with nearly 80dB self-interference suppression. The concepts and prototypes presented in this dissertation have also profound implications for emerging applications such as vehicular radars, 5G small-cell base-stations and virtual reality

Millimeter-wave interconnects for intra- and inter-chip transmission and beam steering in NoC-based multi-chip systems

The primary objective of this work is to investigate the communication capabilities of short-range millimeter-wave (mm-wave) communication among Network-on-Chip (NoC) based multi-core processors integrated on a substrate board. To address the demand for high-performance multi-chip computing systems, the present work studies the transmission coefficients between the on-chip antennas system for both intra- and inter-chip communication. It addresses techniques for enhancing transmission by using antenna arrays for beamforming. It also explores new and creative solutions to minimize the adverse effects of silicon on electromagnetic wave propagation using artificial magnetic conductors (AMC). The following summarizes the work performed and future work. Intra- and inter-chip transmission between wireless interconnects implemented as antennas on-chip (AoC), in a wire-bonded chip package are studied 30GHz and 60 GHz. The simulations are performed in ANSYS HFSS, which is based on the finite element method (FEM), to study the transmission and to analyze the electric field distribution. Simulation results have been validated with fabricated antennas at 30 GHz arranged in different orientations on silicon dies that can communicate with inter-chip transmission coefficients ranging from -45dB to -60dB while sustaining bandwidths up to 7GHz. The fabricated antennas show a shift in the resonant frequency to 25GHz. This shift is attributed to the Ground-Signal-Ground (GSG) probes used for measurement and to the Short-Open-Load (SOLT) calibration which has anomalies at millimeter-wave frequencies. Using measurements, a large-scale log-normal channel model is derived which can be used for system-level architecture design. Further, at 60 GHz densely packed multilayer copper wires in NoCs have been modeled to study their impact on the wireless transmission between antennas for both intra- and inter-chip links and are shown to be equivalent to copper sheets. It is seen that the antenna radiation efficiency reduces in the presence of these densely packed wires placed close to the antenna elements. Using this model, the reduction of inter-chip transmission is seen to be about 20dB as compared to a system with no wires. Lastly, the transmission characteristics of the antennas resonating at 60GHz in a flip-chip packaging environment are also presented

IC-Antenna Co-Integration for Efficient and Scalable Millimeter-Wave Antenna Interfaces

Millimeter-wave (mm-wave) technology promises high speed, high system capacity and low latency interconnects with reduced cost. Applications like high data-rate wireless links, next generation automotive sensors and security body scanners highly depend on mm-wave technology innovations. As operating frequency moves to higher mm-wave bands, shrinking antenna dimensions enable co-integration of IC and antenna. Limited transistor output power at mm-wave requires multi-element arrays to satisfy communication and radar link budgets. This dissertation presents a wafer-scale compatible IC-antenna co-integration for efficient and scalable mm-wave antenna interfaces. The proposed IC-antenna co-integration approach is demonstrated through single antenna transmitters, a concurrent dual-polarization receiver front-end and polarization-duplex transmitter/receiver front-end. Chapter 2 discusses the challenge of mm-wave IC-antenna interfaces with prior art including antenna-in-package (AiP) and on-chip antennas. The 60 GHz efficient, scalable and wafer-scale compatible IC-antenna co-integration approach is presented demonstrating wide bandwidth and large efficiency which are comparable to system-level AiP techniques at a lower cost and fabrication complexity. Chapter 3 extends the proposed approach to a concurrent 60 GHz dual-polarization receiver front-end for short-range imaging/communication applications and polarization diversity based MIMO links. Active cancellation between orthogonal polarizations is adopted to achieve ∼ 30 dB cross-polarization leakage cancellation and concurrent dual-pol reception. Chapter 4 presents a 60 GHz simultaneous transmit and receive front-end to achieve efficient polarization-duplex operation based on dual-polarization IC-antenna co-integration. Transmitter leakage is suppressed at receiver input and output by intrinsic antenna isolation and a feed-forward passive canceller. Total average self-interference cancellation >40 dB is achieved for 1.07 GHz RF bandwidth at 60 GHz in the presence of a reflector

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

Architectures and Integrated Circuits for Efficient, High-power "Digital'' Transmitters for Millimeter-wave Applications

This thesis presents architectures and integrated circuits for the implementation of energy-efficient, high-power "digital'' transmitters to realize high-speed long-haul links at millimeter-wave frequencies in nano-scale silicon-based processes

Ball Grid Array Module with Integrated Shaped Lens for 5G Backhaul/Fronthaul Communications in F-Band

In this paper, we propose a ball grid array (BGA) module with an integrated 3-D-printed plastic lens antenna for application in a dedicated 130 GHz OOK transceiver that targets the area of 5G backhaul/fronthaul systems. The main design goal was the full integration of a small footprint antenna with an energy-efficient transceiver. The antenna system must be compact and cost effective while delivering an approximately 30 dBi gain in the working band, defined as 120 to 140 GHz. Accordingly, a 2×2 array of aperture-coupled patch antennas was designed in the 7×7×0.362 mm3 BGA module as the feed antenna of the lens. This achieved a 7.8 dBi realized gain, broadside polarization purity above 20 dB, and over 55% total efficiency from 110 to 140 GHz (20% bandwidth). A plastic elliptical lens 40 mm in diameter and 42.3 mm in height was placed on top of the BGA module. The antenna achieved a return loss better than ?10 dB and a 28 dBi realized gain from 114 to 140 GHz. Finally, active measurements demonstrated a >12 Gbps Tx/Rx link at 5 m with bit error rate (BER) < 10?6 at 1.6 pJ/b/m. These results pave the way for future cost-effective, energy-efficient, high-data rate backhaul/fronthaul systems for 5G communications.info:eu-repo/semantics/acceptedVersio