Power supply noise analysis for 3D ICs using through-silicon-vias

3D design is being recognized widely as the next BIG thing in system integration. However, design and analysis tools for 3D are still in infancy stage. Power supply noise analysis is one of the critical aspects of a design. Hence, the area of noise analysis for 3D designs is a key area for future development. The following research presents a new parasitic RLC modeling technique for 3D chips containing TSVs as well as a novel optimization algorithm for power-ground network of a 3D chip with the aim of minimizing noise in the network. The following work also looks into an existing commercial IR drop analysis tool and presents a way to modify it with the aim of handling 3D designs containing TSVs.M.S.Committee Chair: Lim, Sung-Kyu; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Loh, Gabrie

L'evoluzione tecnologica dei circuiti integrati attraverso l'introduzione delle strutture tridimensionali.

Da quando intel produsse il primo microprocessore a singolo chip si verificò un esponenziale crescita del numero di transistor all'interno di questi, seguendo appunto quella che è la legge di Moore, la quale afferma: «La complessità di un micro-circuito, misurata ad'esempio tramite il numero di transistor per chip, raddoppia ogni 18 mesi. ». L'introduzione della tecnologia 3D ha influito in maniera considerevole sulle prestazioni dei singoli chip, migliorandole

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM), spin transfer torque RAM (STT-RAM), phase change RAM (PCM) and embedded DRAM (eDRAM) and 2D memories designed using spin orbit torque RAM (SOT-RAM), domain wall memory (DWM) and Flash memory. In addition to single-level cell (SLC) designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D) for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparsh_mittal/destiny_v2

Test-Cost Modeling and Optimal Test-Flow Selection of 3D-Stacked ICs

Three-dimensional (3D) integration is an attractive technology platform for next-generation ICs. Despite the benefits offered by 3D integration, test cost remains a major concern, and analysis and tools are needed to understand test flows and minimize test cost.We propose a generic cost model to account for various test costs involved in 3D integration and present a formal representation of the solution space to minimize the overall cost. We present an algorithm based on A*—a best-first search technique—to obtain an optimal solution. An approximation algorithm with provable bounds on optimality is proposed to further reduce the search space. In contrast to prior work, which is based on explicit enumeration of test flows, we adopt a formal optimization approach, which allows us to select an effective test flow by systematically exploring an exponentially large number of candidate test flows. Experimental results highlight the effectiveness of the proposed method. Adopting a formal approach to solving the cost-minimization problem provides useful insights that cannot be derived via selective enumeration of a smaller number of candidate test flows.This research was supported in part by the National Science Foundation under grant no. CCF-1017391, the Semiconductor Research Corporation under contract no. 2118, a grant from Intel Corporation, and a gift from Cisco Systems through the Silicon Valley Community Foundation

TSV Equivalent Circuit Model using 3D Full-Wave Analysis

This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TSVs). Three dimensional full-wave simulations are performed to extract equivalent circuit models. The effects of parametric and catastrophic faults due to pin-holes, voids and open circuits on the equivalent circuit models have been determined through 3D simulations. The extracted TSV models are then used to conduct delay tests to determine the required measurement resolution to detect TSV defects. It is shown that the substrate conductivity has a considerable effect on TSV fault characterization. It is also shown that, regardless of the substrate type, even a relatively large void does not alter the TSV resistance or its parasitic capacitance noticeably at 1GHz solution frequency. An on-chip test solution for TSV parametric faults requires a dedicated high resolution measurement circuit due to the minor variations of TSV circuit model parameters

Modeling, design, and characterization of through vias in silicon and glass interposers

Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement for packaging 3D ICs. Through vias in stacked silicon ICs and interposers are the key components of a 3D system. The objective of this dissertation is to model through vias in 3D silicon and glass interposers and, to address power and high-speed signal integrity issues in 3D interposers considering silicon biasing effects. An equivalent circuit model of the through via in silicon interposer (Si TPV) has been proposed considering the bias voltage dependent Metal-Oxide-Semiconductor (MOS) capacitance effect. Important design guidelines and optimizations are proposed for Si TPVs used in the signal delivery network, power delivery network (PDN), and as variable capacitors. Through vias in glass interposers (Glass TPVs) are modeled, designed and simulated by using electromagnetic field solvers. Signal and power integrity analyses are performed for silicon and glass interposers. PDN design is proposed by utilizing the MOS capacitance of the Si TPVs for decoupling.PhDCommittee Chair: Tummala, Rao; Committee Co-Chair: Swaminathan, Madhavan; Committee Member: Lim, Sung Kyu; Committee Member: Mukhopadhyay, Saibal; Committee Member: Sitaraman, Suresh; Committee Member: Sundaram, Venk

Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs

<p>As integrated circuits (ICs) continue to scale to smaller dimensions, long interconnects</p><p>have become the dominant contributor to circuit delay and a significant component of</p><p>power consumption. In order to reduce the length of these interconnects, 3D integration</p><p>and 3D stacked ICs (3D SICs) are active areas of research in both academia and industry.</p><p>3D SICs not only have the potential to reduce average interconnect length and alleviate</p><p>many of the problems caused by long global interconnects, but they can offer greater design</p><p>flexibility over 2D ICs, significant reductions in power consumption and footprint in</p><p>an era of mobile applications, increased on-chip data bandwidth through delay reduction,</p><p>and improved heterogeneous integration.</p><p>Compared to 2D ICs, the manufacture and test of 3D ICs is significantly more complex.</p><p>Through-silicon vias (TSVs), which constitute the dense vertical interconnects in a</p><p>die stack, are a source of additional and unique defects not seen before in ICs. At the same</p><p>time, testing these TSVs, especially before die stacking, is recognized as a major challenge.</p><p>The testing of a 3D stack is constrained by limited test access, test pin availability,</p><p>power, and thermal constraints. Therefore, efficient and optimized test architectures are</p><p>needed to ensure that pre-bond, partial, and complete stack testing are not prohibitively</p><p>expensive.</p><p>Methods of testing TSVs prior to bonding continue to be a difficult problem due to test</p><p>access and testability issues. Although some built-in self-test (BIST) techniques have been</p><p>proposed, these techniques have numerous drawbacks that render them impractical. In this dissertation, a low-cost test architecture is introduced to enable pre-bond TSV test through</p><p>TSV probing. This has the benefit of not needing large analog test components on the die,</p><p>which is a significant drawback of many BIST architectures. Coupled with an optimization</p><p>method described in this dissertation to create parallel test groups for TSVs, test time for</p><p>pre-bond TSV tests can be significantly reduced. The pre-bond probing methodology is</p><p>expanded upon to allow for pre-bond scan test as well, to enable both pre-bond TSV and</p><p>structural test to bring pre-bond known-good-die (KGD) test under a single test paradigm.</p><p>The addition of boundary registers on functional TSV paths required for pre-bond</p><p>probing results in an increase in delay on inter-die functional paths. This cost of test</p><p>architecture insertion can be a significant drawback, especially considering that one benefit</p><p>of 3D integration is that critical paths can be partitioned between dies to reduce their delay.</p><p>This dissertation derives a retiming flow that is used to recover the additional delay added</p><p>to TSV paths by test cell insertion.</p><p>Reducing the cost of test for 3D-SICs is crucial considering that more tests are necessary</p><p>during 3D-SIC manufacturing. To reduce test cost, the test architecture and test</p><p>scheduling for the stack must be optimized to reduce test time across all necessary test</p><p>insertions. This dissertation examines three paradigms for 3D integration - hard dies, firm</p><p>dies, and soft dies, that give varying degrees of control over 2D test architectures on each</p><p>die while optimizing the 3D test architecture. Integer linear programming models are developed</p><p>to provide an optimal 3D test architecture and test schedule for the dies in the 3D</p><p>stack considering any or all post-bond test insertions. Results show that the ILP models</p><p>outperform other optimization methods across a range of 3D benchmark circuits.</p><p>In summary, this dissertation targets testing and design-for-test (DFT) of 3D SICs.</p><p>The proposed techniques enable pre-bond TSV and structural test while maintaining a</p><p>relatively low test cost. Future work will continue to enable testing of 3D SICs to move</p><p>industry closer to realizing the true potential of 3D integration.</p>Dissertatio

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Design and Synthesis of Stable, Aligned and Welded Magnesium Silicide Nanowire Assemblies for Fabrication of Efficient and Reliable Thermoelectrics

The ever-increasing energy needs of humanity, coupled with geopolitics of fossil fuels, are imposing demand on the energy supply. A perennial supply of energy is possible by tapping into renewable sources as well as making the current process more efficient. This can be achieved via the use of thermoelectrics, i.e. they can be used to generate energy by converting sunlight into electricity via solar thermoelectrics and increase the efficiency of current processes by converting the wasted heat into electricity. However, the current state-of-the-art thermoelectrics are inefficient and expensive due to the use of rare earth materials. Nanomaterials, especially nanowires, are on the forefront of advancement in thermoelectrics. Recent theoretical and experimental reports indicate the superior energy conversion performances of nanowires compared to their bulk counter parts. However, this superior performance is only observed in single-nanowire devices. Despite more than two decades of research, macro-devices based on large-scale nanowire assemblies, have not been realized. The three main roadblocks for fabricating such large-scale assemblies are lack of 1) methods for mass producing nanowires of any desired chemical composition, 2) techniques for assembling these nanowires into energy conversion devices in an interface engineered manner, and 3) techniques to stabilize the nanowires at higher temperatures against air- water- and acid-assisted degradation. In this context, the objective of this work is to design a strategy to obtain stable and efficient nanowire-based thermoelectric devices. The material systems chosen for this effort are Zinc Phosphide Zn3P2, Magnesium Silicide, Mg2Si, and Manganese Silicide MnSi1.75. Methods for mass production of Zn3P2 and Mg2Si nanowires have been realized previously via a combination of chemical vapor deposition, electroless etching and solid-state diffusion. The assembly and aligning of nanowires was achieved using shear forces via Equal Channel Angular Extrusion (a severe plastic deformation technique). Assembly of the nanowires was also achieved via welding of nanowires utilizing the solid-state diffusion. The nanowires were chemically stabilized by nonconformally decorating them with boron nitride. The stabilization and welding of nanowires helped to achieve decreased thermal conductivity thereby improving their thermoelectric performance compared to the as-obtained nanowire pellets