1,492,166 research outputs found

    Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation

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    Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf magnetron sputtering of a Ru1Si1 target in an argon-oxygen gas. As-deposited, the films are X-ray-amorphous. Their atomic density is 8.9 × 10^22/cm^3 (5.1 g/cm^3), and their electrical resistivity is in the range of 2 mOmega cm. After annealing in dry oxygen at 600°C for 30 min, micron-sized grains of RuO2 grow out of the film and volatile RuO4 escapes. The significance of these results is discussed

    Property in the Anthropocene

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    Human-induced climate change threatens perilous risks for our physical homes and also poses a serious challenge to our legal institutions. Several scholars already have remarked on the disruption climate change has brought to specific legal areas, such as tort, standing, and national security. This essay argues that climate change will also disrupt fundamental ideas about real property. It maintains that the growing need for human management of dynamic natural forces, distorted by greenhouse gas emissions, will erode the foundations of physical stability and owner autonomy that shape basic doctrines of property law

    The Cowl - v.80 - n.1 - Sep 3, 2015

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    The Cowl - student newspaper of Providence College. Volume 80 - No. 1 - September 3, 2015. 24 pages

    Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy

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    An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy. Together with an increase in channel carrier density, this allows the use of a non-annealed ohmic contact process. HEMT devices with 120 nm standard and self-aligned T-gates were fabricated using the non-annealed ohmic process. At DC, self-aligned and standard devices exhibited transconductances of up to 1480 and 1100 mS/mm respectively, while both demonstrated current densities in the range 800 mA/mm. At RF, a cutoff frequency f/sub T/ of 190 GHz was extracted for the self-aligned device. The DC characteristics of the standard devices were then calibrated and modelled using a compound semiconductor Monte Carlo device simulator. MC simulations provide insight into transport within the channel and illustrate benefits over a single delta doped structure

    Studi Pemesinan Ti6246 dengan Jatropha Curcas Sebagai Bio-Lubricant Terhadap Surface Roughness dan Bentuk Geram

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    Machiniability paduan titanium umumnya dianggap buruk karena memiliki kecenderungan geram untuk menempel ke alat pemotong selama pemesinan, sehingga menyebabkan chipping dan kegagalan alat secara prematur. Dilihat dari sisi fungsinya, media pendingin adalah salah satu faktor penyebab buruknya pemesinan titanium. Penggunaan cairan kimia dalam proses turning titanium dianggap banyak resiko sehingga dilakukan penelitian menggunakan bio-oil sebagai cuttingfluid. Penelitian ini menetapkan minyak jarak (jatropha curcas linn) sebagai cairan pendingin pada proses pembubutan titanium (Ti6246). Metode penelitian ini bervariasi pada banyaknya kandungan minyak jatropha curcas yang diemulsikan dengan air untuk menginvestigasi kekasaran permukaan benda kerja dan bentuk geram hasil pembubutan titanium. Hasilnya menunjukkan bahwa penggunaan jatropha curcas oil sebagai cuttingfluid proses pemesinan titanium dengan kecepatan sedang menghasilkan nilai kekasaran yang cukup rendah yaitu 1,852 μm. Pencampuran air sebagai emulsi (water soluble fluid) dengan minyak jatropha curcas dalam praktiknya dapat mengurangi temperature, namun tidak berkontribusi pada kekasaran permukaan ataupun sifat mampu mesin, dalam hal ini bentuk geram . Dan DoS yang tertinggi terdapat pada 100% JC.. Selain itu, bentuk geram (chips) yang dihasilkan oleh proses pemesinan ini termasuk serrated chips (atau biasa disebut segmented or nonhomogeneous chips) yang bergerigi dan semi continu

    Spartan Daily, December 7, 1939

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    Volume 28, Issue 54https://scholarworks.sjsu.edu/spartandaily/3000/thumbnail.jp
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