Photoconductivity of Single-crystalline Selenium Nanotubes

Photoconductivity of single-crystalline selenium nanotubes (SCSNT) under a range of illumination intensities of a 633nm laser is carried out with a novel two terminal device arrangement at room temperature. It's found that SCSNT forms Schottky barriers with the W and Au contacts, and the barrier height is a function of the light intensities. In low illumination regime below 1.46x10E-4 muWmum-2, the Au-Se-W hybrid structure exhibits sharp switch on/off behavior, and the turn-on voltages decrease with increasing illuminating intensities. In the high illumination regime above 7x10E-4 muWmum-2, the device exhibits ohmic conductance with a photoconductivity as high as 0.59Ohmcm-1, significantly higher that reported values for carbon and GaN nanotubes. This finding suggests that SCSNT is potentially a good photo-sensor material as well we a very effective solar cell material.Comment: 12pages including 5 figures, submitted to Nanotechnolog

Resonances in Ferromagnetic Gratings Detected by Microwave Photoconductivity

We investigate the impact of microwave excited spin excitations on the DC charge transport in a ferromagnetic (FM) grating. We observe both resonant and nonresonant microwave photoresistance. Resonant features are identified as the ferromagnetic resonance (FMR) and ferromagnetic antiresonance (FMAR). A macroscopic model based on Maxwell and Landau-Lifschitz equations reveals the macroscopic nature of the FMAR. The experimental approach and results provide new insight in the interplay between photonic, spintronic, and charge effects in FM microstructures.Comment: 4 pages, 4 figure

Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon

We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured at 8 K.Comment: 5 pages, 3 figure

Electrical detection of 31P spin quantum states

In recent years, a variety of solid-state qubits has been realized, including quantum dots, superconducting tunnel junctions and point defects. Due to its potential compatibility with existing microelectronics, the proposal by Kane based on phosphorus donors in Si has also been pursued intensively. A key issue of this concept is the readout of the P quantum state. While electrical measurements of magnetic resonance have been performed on single spins, the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the P nucleus, which demonstrates the feasibility of a recombination-based readout of nuclear spins

Study of Staebler-Wronsky degradation effect in a Si:H based P-I-N solar cells

The objective of this study is to improve the stability and efficiency of thin solar cells with emphasis on a-Si:H devices. The research project was broken down into three main phases. The first involves designing and building a UHV glow discharge system; the second involves making good quality films and eventually efficient cells; the final phase will be analytical

Photoconductivity of biased graphene

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S. The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics