High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described

Vapor deposition process for coating articles of manufacture

A method for providing an essentially uniform coating over the outer surface of an article of manufacture. In particular, a vapor deposition process is disclosed for coating relatively small articles, such as spheres which may be used as lenses in optical systems. The coating may comprise an anti-reflective or alternatively, reflective, material.Published versio

Synthetic Development of Low Dimensional Materials

In this invited paper, we highlight some of our most recent work on the synthesis of low dimensional nanomaterials. Current graduate students and members of our group present four specific case systems: Nowotny–Juza phases, nickel phosphides, germanium-based core/shells, and organolead mixed-halide perovskites. Each system is accompanied by commentary from the student involved, which explains the motivation behind their work, as well as a protocol detailing the key experimental considerations involved in their synthesis. We trust these and similar efforts will help further advance our understanding of the broader field of synthetic nanomaterials chemistry, while, at the same time, highlighting how important this area is to the development of new materials for technologically relevant applications

Multijunction cells for concentrators: Technology prospects

Development of high-efficiency multijunction solar cells for concentrator applications is a key step in achieving the goals of the U.S. Department of Energy National Photovoltaics Program. This report summarizes findings of an issue study conducted by the Jet Propulsion Laboratory Photovoltaic Analysis and Integration Center, with the assistance of the Solar Energy Research Institute and Sandia National laboratoies, which surveyed multijunction cell research for concentrators undertaken by federal agencies and by private industry. The team evaluated the potentials of research activities sponsored by DOE and by corporate funding to achieve projected high-efficiency goals and developed summary statements regarding industry expectations. Recommendations are made for the direction of future work to address specific unresolved aspects of multijunction cell technology

Compositional modulation and ordering in semiconductors

Journal ArticleThe science of materials as a specific discipline is a relatively modern development. Within this rather modern field, the study of semiconductor materials is an even more recent development. Modern textbooks on materials science focus primarily on the properties of metals and second on the properties of ceramics, reflecting the commercial importance of these materials 50 years ago when the transistor was demonstrated using germanium

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect

Method of making a high conductance ohmic junction for monolithic semiconductor devices

In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved