Design of Dual-band Branch-Line Coupler Based on Shunt Open-Circuit DCRLH Cells

In this article, the shunt open-circuit dual composite right/left-handed (DCRLH) cell is initially proposed and one dual-band branch-line coupler based on the proposed cells is designed. It is found that, compared with DCRLH cell, the frequency selectivity, matching condition and adjustment range of the shunt open-circuit DCRLH cell improve greatly. Moreover, the shunt open-circuit DCRLH cell exhibits two adjustable frequency points with -90degrees phase shift within its first two passbands. In order to explore this exotic property effectively, the influence of the primary geometrical parameter is investigated through parametric analysis. Thus, one dual-band branch-line coupler based on the shunt open-circuit DCRLH cells is designed. Both simulated and measured results indicate that comparative performance is achieved. Different from part of previous dual-band branch line couplers, for the proposed coupler, the signs of phase difference of two output ports within the two operating frequency bands are identical with each other. This branch-line coupler is quite suitable for the application which is sensitive to the variation of phase difference and its effective area is compact

Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells

Pyroelectric effect enhancement through product property under open circuit condition

An analytical model for the pyroelectric (PY) effect under open circuit condition and 2-2 connectivity laminates of various pairs of PY and nonpyroelectric (NP)/elastic materials has been developed. It is evident from our analysis that there indeed is a substantial dissimilarity between the PY coefficients and figure of merit for efficiency for various PY-NP pairs under short circuit and open circuit conditions. We believe this implies that there should be a greater distinction made between the PY coefficients under these two electrical conditions than previously thought. The indicators for various PY-NP material pairs that can be utilized to determine their PY coefficient enhancement potential under open circuit condition have been identified. The investigated PY materials are lead zirconate titanate (PZT-5H and PZT-5A), barium titanate, lithium tantalate, lithium niobate, and polyvinylidene fluoride (PVDF), while the NP materials are stainless steel, polytetrafluoroethylene (PTFE or Teflon), chlorinated polyvinyl chloride thermoplastic (CPVC), aluminum, zinc, and Invar 36. Extraordinarily large PY coefficient of 97×10-4 C m-2 K-1 at minimum thickness ratio Rmin is expected for PZT-5H-CPVC pair while PVDF-CPVC could show increase in the secondary PY coefficient of up to 350%. In addition, where the figure of merit for efficiency is concerned, for the same volume of the composite PZT-5A-PTFE pair it reaches 24, a 24-fold increase in efficiency at Rmin. Our analysis techniques should provide a methodological way for appraising the potentials of particular PY material and its 2-2 laminates for applications under open circuit condition such as PY X-ray generation, electron accelerator, and nuclear fusion

High Open-Circuit Voltages in Lead-Halide Perovskite Solar Cells - Experiment, Theory and Open Questions

One of the most significant features of lead-halide perovskites are their ability to have comparably slow recombination despite the fact that these materials are mostly processed from solution at room temperature. The slow recombination allows achieving high open-circuit voltages when the lead-halide perovskite layers are used in solar cells. This perspective discusses the state of the art of our understanding and of experimental data with regard to recombination and open-circuit voltages in lead-halide perovskites. A special focus is put onto open questions that the community has to tackle to design future photovoltaic and optoelectronic devices based on lead-halide perovskites and other semiconductors with similar properties

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells

Kinetics of Open Circuit Processes in Undischarged Li/SOC12 Cells

The kinetics of the heat producing processes in undischarged Li/SOCl2 cells under open circuit conditions were measured by heat-conduction microcalorimetry. The cells studied, Honeywell type G2666 reserve cells, were activated as needed and the rate of open circuit heat output determined as a function of time since activation and temperature. The results at each temperature can be described by an equation of the form q = Bktx where q is the rate of heat output, B is the heat produced per unit of reaction, k and x are empirical constants, and t is the time since activation. Both x and k are found to be functions of temperature; therefore, accelerated testing at elevated temperatures is probably not valid for these cells until the processes involved are better understood