Thermoelectric properties of nn-type SrTiO3

We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high $ZT$ at optimized doping, and suggests that the $ZT$ value can reach 0.7 at T = 1400 K. Thus $ZT$ can be improved from the current experimental values by carrier concentration optimization

Proton-produced defects in n-type silicon

Defect energy levels and concentrations for proton irradiated, n-type silicon single crystal

Spin relaxation in nn-type ZnO quantum wells

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.Comment: 6 pages, 4 figure