109,294 research outputs found
Layout Decomposition for Quadruple Patterning Lithography and Beyond
For next-generation technology nodes, multiple patterning lithography (MPL)
has emerged as a key solution, e.g., triple patterning lithography (TPL) for
14/11nm, and quadruple patterning lithography (QPL) for sub-10nm. In this
paper, we propose a generic and robust layout decomposition framework for QPL,
which can be further extended to handle any general K-patterning lithography
(K4). Our framework is based on the semidefinite programming (SDP)
formulation with novel coloring encoding. Meanwhile, we propose fast yet
effective coloring assignment and achieve significant speedup. To our best
knowledge, this is the first work on the general multiple patterning
lithography layout decomposition.Comment: DAC'201
Enhancement of optical response in nanowires by negative-tone PMMA lithography
The method of negative-tone-PMMA electron-beam lithography is investigated to
improve the performance of nanowire-based superconducting detectors. Using this
approach, the superconducting nanowire single-photon detectors (SNSPDs) have
been fabricated from thick 5-nm NbN film sputtered at the room temperature. To
investigate the impact of this process, SNSPDs were prepared by positive-tone
and negative-tone-PMMA lithography, and their electrical and photodetection
characteristics at 4.2 K were compared. The SNSPDs made by negative-tone-PMMA
lithography show higher critical-current density and higher photon count rate
at various wavelengths. Our results suggest a higher negative-tone-PMMA
technology may be preferable to the standard positive-tone-PMMA lithography for
this application
Optical lithography
Optical lithography is a photon-based technique comprised of projecting an image into a photosensitive emulsion (photoresist) coated onto a substrate such as a silicon wafer. It is the most widely used lithography process in the high volume manufacturing of nano-electronics by the semiconductor industry. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information to be transferred very rapidly. For example, a modern leading edge lithography tool produces 150-300-mm patterned wafers per hour with 40-nm two-dimensional pattern resolution, yielding a pixel throughput of approximately 1.8T pixels/s. Continual advances in optical lithography capabilities have enabled the computing revolution over the past 50 years
Dual field alignment display and control for electron micropattern generator
Application of electron beam lithography to replace photolithography process in fabrication of integrated circuits is discussed. Procedure for using electron beam lithography equipment is described. Diagram of electron micropattern generator is provided
Organization of Block Copolymers using NanoImprint Lithography: Comparison of Theory and Experiments
We present NanoImprint lithography experiments and modeling of thin films of
block copolymers (BCP). The NanoImprint lithography is used to align
perpendicularly lamellar phases, over distances much larger than the natural
lamellar periodicity. The modeling relies on self-consistent field calculations
done in two- and three-dimensions. We get a good agreement with the NanoImprint
lithography setups. We find that, at thermodynamical equilibrium, the ordered
BCP lamellae are much better aligned than when the films are deposited on
uniform planar surfaces
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