77,042 research outputs found

    High mobility work station restraint support

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    Chair holds man in semistanding posture enabling astronauts to work comfortably with minimum restriction in weightless environment. Seat, angled at 130 deg to back support, twists and swivels up to 20 deg in all directions but forward. Two flexible thigh clips prevent occupant from slipping off

    Hydrodynamic electron flow in high-mobility wires

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    Hydrodynamic electron flow is experimentally observed in the differential resistance of electrostatically defined wires in the two-dimensional electron gas in (Al,Ga)As heterostructures. In these experiments current heating is used to induce a controlled increase in the number of electron-electron collisions in the wire. The interplay between the partly diffusive wire-boundary scattering and the electron-electron scattering leads first to an increase and then to a decrease of the resistance of the wire with increasing current. These effects are the electronic analog of Knudsen and Poiseuille flow in gas transport, respectively. The electron flow is studied theoretically through a Boltzmann transport equation, which includes impurity, electron-electron, and boundary scattering. A solution is obtained for arbitrary scattering parameters. By calculation of flow profiles inside the wire it is demonstrated how normal flow evolves into Poiseuille flow. The boundary-scattering parameters for the gate-defined wires can be deduced from the magnitude of the Knudsen effect. Good agreement between experiment and theory is obtained.Comment: 25 pages, RevTeX, 9 figure

    High mobility dry-transferred CVD bilayer graphene

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    We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices we extract charge carrier mobilities up to 180,000 cm2^2/(Vs) at 2 K and up to 40,000 cm2^2/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ration of more than 10,000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.Comment: 5 pages, 4 figure

    Gating of high-mobility InAs metamorphic heterostructures

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    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In0.75_{0.75}Ga0.25_{0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In0.75_{0.75}Al0.25_{0.25}As as the barrier without an In0.75_{0.75}Ga0.25_{0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices
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