20,398 research outputs found
Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide.
The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multilayer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multilayer MoS2 is comparable to or higher than that in monolayers. This strong electroluminescence can be attributed to electric-field-induced carrier redistribution from the lowest energy points (indirect bandgap) to higher energy points (direct bandgap) in k-space. The electric-field-induced electroluminescence is general for other layered materials including WSe2 and can open up a new pathway towards transition metal dichalcogenide-based optoelectronic devices
Efficient photovoltaic and electroluminescent perovskite devices
Planar diode structures employing hybrid organic-inorganic methylammonium lead iodide perovskites lead to multifunctional devices exhibiting both a high photovoltaic efficiency and good electroluminescence. The electroluminescence strongly improves at higher current density applied using a pulsed driving method
A simulation toolkit for electroluminescence assessment in rare event experiments
A good understanding of electroluminescence is a prerequisite when optimising
double-phase noble gas detectors for Dark Matter searches and high-pressure
xenon TPCs for neutrinoless double beta decay detection.
A simulation toolkit for calculating the emission of light through electron
impact on neon, argon, krypton and xenon has been developed using the Magboltz
and Garfield programs. Calculated excitation and electroluminescence
efficiencies, electroluminescence yield and associated statistical fluctuations
are presented as a function of electric field. Good agreement with experiment
and with Monte Carlo simulations has been obtained
Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
Light-emitting diodes are of importance for lighting, displays, optical
interconnects, logic and sensors. Hence the development of new systems that
allow improvements in their efficiency, spectral properties, compactness and
integrability could have significant ramifications. Monolayer transition metal
dichalcogenides have recently emerged as interesting candidates for
optoelectronic applications due to their unique optical properties.
Electroluminescence has already been observed from monolayer MoS2 devices.
However, the electroluminescence efficiency was low and the linewidth broad due
both to the poor optical quality of MoS2 and to ineffective contacts. Here, we
report electroluminescence from lateral p-n junctions in monolayer WSe2 induced
electrostatically using a thin boron nitride support as a dielectric layer with
multiple metal gates beneath. This structure allows effective injection of
electrons and holes, and combined with the high optical quality of WSe2 it
yields bright electroluminescence with 1000 times smaller injection current and
10 times smaller linewidth than in MoS2. Furthermore, by increasing the
injection bias we can tune the electroluminescence between regimes of
impurity-bound, charged, and neutral excitons. This system has the required
ingredients for new kinds of optoelectronic devices such as spin- and
valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional
electro-optic modulators.Comment: 13 pages main text with 4 figures + 4 pages upplemental material
Antenna-enhanced Optoelectronic Probing of Carbon Nanotubes
We report on the first antenna-enhanced optoelectronic microscopy studies on
nanoscale devices. By coupling the emission and excitation to a scanning
optical antenna, we are able to locally enhance the electroluminescence and
photocurrent along a carbon nanotube device. We show that the emission source
of the electroluminescence can be point-like with a spatial extension below 20
nm. Topographic and antenna-enhanced photocurrent measurements reveal that the
emission takes place at the location of highest local electric field indicating
that the mechanism behind the emission is the radiative decay of excitons
created via impact excitation
Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h
- …