翼反角对高压捕获翼构型高超气动特性的影响

为研究翼反角变化对高压捕获翼构型高超声速气动特性的影响，基于一种双翼面、单支撑、翼身组合布局的高压捕获翼概念构型，以飞行马赫数6，飞行高度30km为计算状态，捕获翼和机体三角翼上/下反角为设计变量，结合均匀试验设计方法、数值模拟方法和Kriging建模方法，探寻了升阻特性、纵向和横航向稳定性随翼反角的变化规律。结果表明，升力、阻力及升阻比随翼反角的变化规律基本一致，且对上反角变化更加敏感；小攻角时，翼面上反会明显降低升阻比，而下反会使升阻比先略微增大后缓慢减小；大攻角时，翼反角对升阻比的影响较小；纵向稳定性主要受三角翼反角的影响，三角翼上反时，纵向稳定性降低，下反时，纵向稳定性基本不变；翼面上/下反都会提高航向稳定性，但下反的效果更明显；翼面上反会提高横向稳定性，下反则降低，但大攻角飞行时，三角翼上反角过大可能会导致横向稳定性降低

Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique

采用低温缓冲层技术,在SI衬底上生长了质量优良的gE薄膜。利用原子力显微镜(AfM)、双晶X射线衍射(Xrd)和拉曼散射等研究了薄膜的晶体质量。结果表明,由于无法抑制三维岛状生长,低温gE缓冲层的表面是起伏的。然而,gE与SI间的压应变几乎完全弛豫。当缓冲层足够厚时,后续高温gE外延层的生长能够使粗糙的表面变得平整。在90 nM低温gE缓冲层上生长的210 nM高温gE外延层,表面粗糙度仅为1.2 nM,位错密度小于5x105CM-2,Xrd的峰形对称,峰值半高宽为460 ArC SEC。High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope,X-ray diffraction,and Raman spectroscopy.The results show that the LT Ge buffer is rough due to the three-dimensional islands formations,but the misfit stress is nearly fully relaxed.Fortunately,the rough LT Ge surface is effectively smoothed by subsequent growth at elevated temperature when the LT Ge buffer is thick enough and the compressive strain is largely relaxed.Finally,the 210 nm Ge epitaxial film with smooth surface(root-mean-square roughness of 1.2 nm),low threading dislocation density(5×105 cm-2),and sharp and symmetric X-ray diffraction peak(full width at half maximum of ～460 arc sec) is achieved on LT Ge buffer with thickness of 90 nm.国家重点基础发展研究计划资助项目(2007CB613404

ROUGH MULTIPLE SINGULAR INTEGRALS ALONG HYPERSURFACES

In this paper, the authors study the mapping properties of singular integrals on product domains with kernels in L(log+L)ε(Sm-1 × Sn-1) (ε = 1 or 2) supported by hyper-surfaces. The Lp bounds for such singular integral operators as well as the related Marcinkiewicz integral operators are established, provided that the lower dimensional maximal function is bounded on Lq(R3) for all q > 1. The condition on the integral kernels is known to be optimal

Design and application of mechanical rotation pulse device for water depth and water level measurement

针对超声波、光电等水深水位传感器抗污染能力差,无法实现水深水位同时检测的问题,提出了一种机械式旋转脉冲水深水位测量装置,该测量装置分滚筒提升装置、夹紧装置和控制装置三部分。在重锤下降的过程中,通过实时检测光电编码器输出的旋转脉冲数可以得到重锤下降的位移、速度、加速度,找出重锤下降的加速度突变点,由此判断出蓄水池的水面和固液界面两个临界点,进而计算出蓄水池的水深、水位和沉淀物料厚度。测试结果表明:该装置抗污染能力强,在重锤为510 g、采样时间间隔为0.10 S时测量效果最佳,测量误差小于1%。A new type of mechanical rotation pulse measurement device is proposed,aiming at problem that ultrasonic and photoelectric sensors have poor ability to resist pollution and can't realize water depth and water level detection at the same time.The measurement device points cylinder lifting device,clamping device and control device.In falling process of heavy hammer,the downward displacement,velocity,acceleration of heavy hammer can be obtained through real-time detection on output rotation pulse number of photoelectric encoder.Then the two falling acceleration mutation points of heavy hammer can also be founded when heavy hammer gets into the water and arrives at the solid-liquid interface in a reservoir.Thus the reservoir water depth,water level and precipitation material thickness can be calculated.The measurement result shows that the pollution resistance capability of the device is strong and the water depth measurement error of the device is less than 1 % when the weight of heavy hammer is 510 g and the sampling time interval is 0.10 s.国家自然科学基金资助项目(U1204107;51475459); 河南省高等学校精密制造技术与工程重点学科开放实验室开放基金资助项目(PMTE201318A); 河南理工大学博士基金资助项目(B2012—101); 河南理工大学教改项目(2014JG061); 河南省教育厅科技技术研究重点项目(14B460033

Luminescence of Strain Compensated Si/Si_(0.62)Ge_(0.38) Quantum Well Grown on Si_(0.75)Ge_(0.25) Virtual Substrate

由于SI/SIgE异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基SI1-XgEX虚衬底上外延应变补偿的SI/S1-ygEy(y>X)量子阱的能带结构,将量子阱对电子的限制势垒提高到100MEV以上。在实验上,采用300℃生长的gE量子点插入层,制备出薄的SIgE驰豫缓冲层(虚衬底),表面gE组份达到0.25,表面粗糙度小于2nM,驰豫度接近100%。在我们制备的SIgE缓冲层上外延了应变补偿SIgE/SI多量子阱结构,并初步研究了其发光特性。In this paper,band structures of strain compensated Si/S_(1-y)Ge_y(y>x) quantum well grown on Si_(1-x)Ge_x virtual substrate was design to enlarge the conduction band offset up to 100meV for improving luminescence.The fully strain-relaxed Si_(0.75)Ge_(0.25) virtual substrate was prepared by inserting a low-temperature Ge islands layer in ultra-high vacuum chemical deposition.The root-mean-square surface roughness of the virtual substrate is less than 2nm.The luminescence of the strain compensated Si/SiGe quantum well on the virtual substrate was investigated.国家重点基础研究发展计划资助项目2007CB613400;国家自然科学基金资助项目(60676027;50672079

前缘后掠角对高压捕获翼构型亚声速气动特性影响

为研究高压捕获翼气动布局在亚声速来流条件下的气动特性,本文基于一种单翼原理性构型,以捕获翼前缘后掠角作为设计变量,采用数值模拟手段,在Ma=0.5条件下分析了捕获翼前缘后掠角变化对气动性能和流动特性的影响。结果表明:捕获翼前缘后掠角增大,捕获翼上表面流动由附着涡转变为前缘涡结构,捕获翼上表面的压力减小;同时捕获翼-机体通道之间的压缩-扩张效应减弱,捕获翼下表面压力增加。在0-15°攻角范围内,随着捕获翼前缘后掠角增大,整机升力小幅降低,阻力大幅减小,最高升阻比提高约30%。此外,捕获翼前缘后掠角增加,促进圆台机身背部横向绕流发展,易诱导机体两侧产生分离涡

机体尾缘形状对高压捕获翼构型亚声速特性影响

基于圆锥-圆台组合平板捕获翼构型，通过改变尾缘展向扩张角，获得一系列不同外形，在典型亚声速（Ma=0.5）来流条件下开展数值计算，并重点分析了机体尾部截面形状和攻角变化对流动特性和气动特性的影响。结果表明：在0°攻角状态下，机体尾截面展向变宽，机体与捕获翼之间的流场区域对来流的扩张减弱，机体圆台上表面的逆压梯度减小，可有效抑制机-翼之间流场内的流动分离现象，同时整机升力系数增大，阻力系数先减小后增大。随攻角增大，机体圆台上表面压力增大，分离区范围逐渐缩小直至消失，机体尾截面展向变宽可加速分离区消失的进程。当攻角进一步增大时，机体背风面出现横向绕流，但机体尾截面展向变宽可以延缓横向绕流的发展。计算结果还表明，随攻角增大整机升力及阻力主要由捕获翼贡献，机体贡献的气动力随攻角变化不敏感，机体尾截面展向变宽对整机焦点位置影响较小。机体下表面几何形状变化对机体与捕获翼之间的区域内流动特性和捕获翼部件的气动力特性无明显影响

采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜

采用低温缓冲层技术,在Si衬底上生长了质量优良的Ge薄膜。利用原子力显微镜(AFM)、双晶X射线衍射(XRD)和拉曼散射等研究了薄膜的晶体质量。结果表明,由于无法抑制三维岛状生长,低温Ge缓冲层的表面是起伏的。然而,Ge与Si间的压应变几乎完全弛豫。当缓冲层足够厚时,后续高温Ge外延层的生长能够使粗糙的表面变得平整。在90 nm低温Ge缓冲层上生长的210 nm高温Ge外延层,表面粗糙度仅为1.2 nm,位错密度小于5×105cm-2,XRD的峰形对称,峰值半高宽为460 arc sec