The relationship between quality of life (QOL) and self-efficacy (SE) of the teachers from Shahrekord

Background and aim: Teachers have the most important roles in education of young people in societies. Their quality of life (QOL) and Self-Efficacy (SE) can effect on their performance and consequently on their students, directly or indirectly. The purpose of this study was the evaluation of teachers` QOL and SE in different education levels. Methods: In a descriptive analytical study, 471 teachers that employed in the primary, secondary and high schools of Shahrekord city were selected in a cluster randomization. Self-efficacy was assessed by Schnauzer’s teacher’s SE scale and quality of life was evaluated by SF-36. The data collection was conducted using self-administered questionnaires. Data were analyses using t-test, analysis of variance, Toki and Chai-square methods. Results: Based on the findings, 92.5% of the participants were married, 84.6% were formal employees, and 97.9% had graduated from the universities. Besides, their mean age was 40.18±5.60 years and the average of their work experiences was 18.49±6.46 years. The mean score of the teachers’ QOL was 68.69±12.17 that the highest rate belonged to the primary school teachers and the lowest rate was seen in the secondary school teachers (P<0.01). Furthermore, the mean of the participants’ SE was 28.77±4.44 with the highest rate, in the primary school teachers and the lowest rate, in the high school teachers (P<0.05). Conclusion: According to the results, all of the participants in each education level had relatively good QOL and moderate professional SE. This study showed that there are a significant, positive relation between teachers` QOL and their professional SE. So it is important to assess and apply the appropriate methods to increase the SE of Shahrekord teachers

Evaluation of fungal contaminations and humidity percent of consumed flour in the bakeries of Tabriz city

    Foods contaminations with Mycotoxin producing fungi is the common problem in production and maintenance of foods leads to production and presence of many types of Mycotoxins with extensive clinical effect on human called Mycotoxicosis. The aim of this study is to determine humidity percent and fungal contaminations of flour which is used in bakeries of Tabriz city. From 89 bakeries that were baking every kind of wheat bread, flour samples were collected .At first, humidity percent of samples was measured with standard method; Then experimented with standards of Iran(997 and 2393):10 gram flour sample were dissolved in 90cc of ¼ sterile Ringer solution; then10-2 ,10-3 ,10-4,10-5and10-6 dilutions were prepared. From each dilution, 1cc were spilled in different sterile plates; afterward, 15-20cc of  sterile YCGA culture medium were spilled on the plates and they were shacked slowly; hereafter, they were left until the culture mediums were coagulated. Thereupon, the plates were incubated in 25 ºc for 5 days. Finally, fungi colonies were identified and counted. From 89 samples, 28 samples (31,5%)contain fungi contaminations more than 104colonies/gram of flour(allowable limit) [p&lt;0.05]. Results showed the most fungi were Aspergillus niger and Acromonium. Mean of humidity percent in samples was12.8±0.76 which was in standard level (≤14%) (p=0.000). Findings of this study are according to results of other studies. With respect to wheat is a staple food of Iranians, attention and follow up in all steps of production, distribution and maintenance of wheat and flour with the aim of minimizing fungi contaminations is necessary.

Rf linearity in low dimensional nanowire mosfets

Ever decreasing cost of electronics due to unique scaling potential of today's VLSI processes such as CMOS technology along with innovations in RF devices, circuits and architectures make wireless communication an un-detachable part of everyday's life. This rapid transition of communication systems toward wireless technologies over last couple of decades resulted in operation of numerous standards within a small frequency window. More traffic in adjacent frequency ranges imposes more constraints on the linearity of RF front-end stages, and increases the need for more effective linearization techniques. Long-established ways to improve linearity in DSM CMOS technology are focused on system level methods which require complex circuit design techniques due to challenges such as nonlinear output conductance, and mobility degradation especially when low supply voltage is a key factor. These constrains have turned more focus toward improvement of linearity at the device level in order to simplify the existing linearization techniques. This dissertation discusses the possibility of employing nanostructures particularly nanowires in order to achieve and improve RF linearity at the device level by making a connection between the electronic transport properties of nanowires and their circuit level RF characteristics (RF linearity). Focus of this work is mainly on transconductance (gm) linearity because of the following reasons: 1) due to good electrostatics, nanowire transistors show fine current saturation at very small supply voltages. Good current saturation minimizes the output conductance nonlinearities. 2) non-linearity due to the gate to source capacitances (Cgs) can also be ignored in today's operating frequencies due to small gate capacitance values. If three criteria: i) operation in the quantum capacitance limit (QCL), ii) one-dimensional (1-D) transport, and iii) operation in the ballistic transport regime are met at the same time, a MOSFET will exhibit an ideal linear Id-Vgs characteristics with a constant gm of which is independent of the choice of channel material when operated under high enough drain voltages. Unique scaling potential of nanowires in terms of body thickness, channel length, and oxide thickness makes nanowire transistors an excellent device structure of choice to operate in 1-D ballistic transport regime in the QCL. A set of guidelines is provided for material parameters and device dimensions for nanowire FETs, which meet the three criteria of i) 1-D transport ii) operation in the QCL iii) ballistic transport, and challenges and limitations of fulfilling any of the above transport conditions from materials point of view are discussed. This work also elaborates how a non-ideal device, one that approaches but does not perfectly fulfill criteria i) through iii), can be analyzed in terms of its linearity performance. In particular the potential of silicon based devices will be discussed in this context, through mixture of experiment and simulation. 1-D transport is successfully achieved in the lab. QCL is simulated through back calculation of the band movement of the transistors in on-state. Quasi-ballistic transport conditions can be achieved by cooling down the samples to 77K. Since, ballistic transport is challenging to achieve for practical channel lengths in today's leading semiconductor device technologies the effect of carrier back-scattering on RF linearity is explored through third order intercept point (IIP3) analysis. These findings show that for the devices which operate in the QCL, while 1-D sub-bands are involved in carrier transport, current linearity is directly related to the nature of the dominant scattering mechanism in the channel, and can be improved by proper choice of channel material in order to enforce a specific scattering mechanism to prevail in the channel. Usually, in semiconductors, the dominant scattering mechanism in the channel is the superposition of different mechanisms. Suitable choice of channel material and bias conditions can magnify the effect of a particular scattering mechanism to achieve higher linearity levels. The closing section of this thesis focuses on InAS due to its potential for high linearity since it has small effective mass and large mean-free-path

Worldwide wind energy status and the characteristics of wind energy in Iran, case study: the province of Sistan and Baluchestan

In this paper, the recent trend of the worldwide wind energy utilisation is reviewed and the recent activities in using renewable energy sources in Iran are explained. As a case study, the wind characteristics of the province of Sistan and Baluchestan are statistically analysed. The wind characteristics such as the monthly mean wind speed and the wind power density of each station are presented. The monthly variation of the wind direction is presented and also the dominant wind direction is shown in a wind rose diagram. The values of turbulence intensity at different heights are calculated. The results show that the stations of Khash and Nosratabad are more suitable for limited off-grid utility applications. Lootak with the average annual wind power density of 388 W m−2 at the height of 40 m and constant wind direction is recommended for large-scale grid-connected wind turbines

Introduction to Research in Education

xii,388 hlm.;21 c

Pengantar penelitian dalam pendidikan

xv, 511 p.; 20 cm

Transconductance Linearity Analysis of 1-D, Nanowire FETs in the Quantum Capacitance Limit

The impact of channel material and dimensionality on the linearity of nanowire transistors is studied theoretically. This paper also evaluates various scattering mechanisms in this context. While operating under 1-D transport conditions in the quantum capacitance limit, the achievable device linearity strongly depends on the details of the scattering mechanisms limiting the transport. Interestingly, it is not only the scattering length that determines the third-order intercept point but also the particular energy dependence of the dominant-scattering mechanism that needs to be considered. Our results provide critical insights for the choice of material to obtain the desired device linearity