Forgiveness: love relationship

Abstract The article highlights the relationship between forgiveness, relation and love. It is divided in three sections: an experience of forgiveness which took place in Burundi in the '90s, an outline of the culture of that country and some theories about forgiveness in the psychological field. The giving of forgiveness is not immediate, but when the victim is able to grant it, he becomes a subject with the power to release himself from a oppressor-oppressed relationship, wherein, if he doesn't forgive, he might be trapped. Without a victim, there is no offender, even although the guilt and the crime remain as such. By forgiving, conflict between victim/offender is overcome and the two parts enter into a relationship with each other. In a relationship, every time we connect with the other and we recognize him, we enter into a relationship with him and this recognition becomes a gift. At this point for-give-ness itself becomes a gift, because it has as it's centre a gift, it becomes a relationship of love where I am able to recognize the other for what he really is

Time-domain simulation of the full hydrodynamic model

A simple upwind discretization of the highly coupled non-linear differential equations which define the hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon $n^+ - n - n^+$ - structure is simulated, using the energy-balance model and the full hydrodynamic model. Results for stationary cases are then compared, and it is pointed out where the energy-balance model, which is implemented in most of today's commercial semiconductor device simulators, fails to describe accurately the electron dynamics. Additionally, a GaAs $n^+ - n - n^+$-structure is simulated in time-domain in order to illustrate the importance of inertia effects at high frequencies in modern submicron devices.Comment: 15 pages, 8 figures, prepared using jnmauth.cl

A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

In this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 transmission lines and shorts was fabricated and tested.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing

Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

In RF-MEMS packaging, next to the protection of movable structures, optimization of package electrical performance plays a very important role. In this work, a wafer-level packaging process has been investigated and optimized in order to minimize electrical parasitic effects. The RF-MEMS package concept used is based on a wafer-level bonding of a capping silicon substrate to an RF-MEMS wafer. The capping silicon substrate resistivity, substrate thickness and the geometry of through-substrate electrical interconnect vias have been optimized using finite-element electromagnetic simulations (Ansoft HFSS). Test structures for electrical characterization have been designed and after their fabrication, measurement results will be compared with simulations.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET structures, we show that, in the ideal case of a smooth electrostatic potential, the modes can be decoupled in different groups without any loss of accuracy. Thus, inter-subband scattering due to electron-phonon interactions is properly accounted for, while the overall simulation time considerably improves with respect to real-space, with a speed-up factor of 40 for a 1.5-nm-wide device. Such factor increases with the square of the device width. We also discuss the accuracy of two commonly used approximations of the scattering self-energies: the neglect of the off-diagonal entries in the mode-space expressions and the neglect of the Hermitian part of the retarded self-energy. While the latter is an acceptable approximation in most bias conditions, the former is somewhat inaccurate when the device is in the off-state and optical phonon scattering is essential in determining the current via band-to-band tunneling. Finally, we show that, in the presence of a disordered potential, a coupled mode space approach is necessary, but the results are still accurate compared to the real-space solution.Comment: 10 pages, 12 figures. Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physic

Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device characteristics obtained from self-consistent ballistic quantum transport simulations, we explore the circuit parameter space and evaluate the amplifier performance in terms of dc voltage gain and voltage gain bandwidth. We show that the dc gain can be effectively improved by the negative differential resistance provided by the cross-coupled pair. Contact resistance is the main obstacle to achieving gain bandwidth products in the terahertz range. Limitations of the proposed amplifier are identified with its poor linearity and relatively large Miller capacitance.Comment: 19 pages, 10 figure

Renin angiotensin aldosterone system (RAAS) inhibitors in the prevention of early renal disease in diabetes

Diabetic nephropathy (diabetic kidney disease) is defined as a rise in urinary albumin excretion rate, often associated with an increase in blood pressure, and typically with concomitant retinopathy but without evidence of other causes of renal disease. It is characterized first by albuminuria and then by a progressive decline in glomerular filtration rate, eventually resulting in end-stage renal disease (ESRD). Diabetic nephropathy occurs in approximately 30-35% of type 1 and type 2 patients and tends to cluster in families. Diabetic kidney disease is associated with a very marked increase in cardiovascular disease and, even from the earliest stages, with microalbuminuria. A diabetic milieu is required for the diabetic glomerular lesion to develop, and the renin angiotensin aldosterone system (RAAS) has been implicated in the development and progression of diabetic nephropathy. Most patients with diabetes and renal impairment die from a cardiovascular disease event before they progress to ESRD. From the studies described in this review, we think that clear evidence of RAAS inhibition in the prevention of diabetic nephropathy is lacking and more studies are warranted. Nevertheless, tight blood pressure control with inhibitor of RAAS and multifactorial intervention (glycaemic, lipid control and so on) are warranted for secondary prevention and treatment of chronic kidney disease in diabetes

Diabetic Nephropathy: Perspective on Novel Molecular Mechanisms

Diabetes mellitus (DM) is the major cause of end-stage renal disease (ESRD) globally, and novel treatments are urgently needed. Current therapeutic approaches for diabetic nephropathy (DN) are focussing on blood pressure control with inhibitors of the renin-angiotensin-aldosterone system, on glycaemic and lipid control, and life-style changes. In this review, we highlight new molecular insights aiding our understanding of the initiation and progression of DN, including glomerular insulin resistance, dysregulation of cellular substrate utilisation, podocyte-endothelial communication, and inhibition of tubular sodium coupled glucose reabsorption. We believe that these mechanisms offer new therapeutic targets that can be exploited to develop important renoprotective treatments for DN over the next decade