Telecommunication wavelength GaAsBi light emitting diodes

GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm − 2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study

Melanocytoma of the optic nerve head: a diagnostic dilemma

The clinical features, autofluorescence, Bscan ultrasonography, optical coherence tomography and fluorescein angiography of the lesion were described. Multiple investigation modalities are needed to confirm the benign nature of the lesion. Careful evaluation and follow-up is crucial to avoid misdiagnosis and erroneous management

Granite Exploration by using Electrical Resistivity Imaging (ERI): A Case Study in Johor

Electrical Resistivity Imaging (ERI) is a tool used in near surface geophysical surveys by flowing an electric current through electrodes that were injected into the ground. The usage of electrical resistivity imaging (ERI) method dominated by geophysicist has increased tremendously in geotechnical engineering application owing to the efficiency and effectiveness of the method in term of time, cost and also data coverage. The survey performed with respect to the particular reference to ERI in determining the granite rock underneath the ground. There were seven (7) lines of ERI performed at the study area by using ABEM Terrameter LS 2 set of equipment based on Schlumberger protocol. Six (6) boreholes were also drilled to obtain engineering properties of rock at the study area. In order to develop the relationship between resistivity and engineering properties, a comparison between borehole field test result and the resistivity value were made. Results from the ERT indicated the presence of zones with high resistivity values identified as overburden soil, fractured granite and solid granite. The findings of this study also showed that the electrical resistivity imaging coupled with borehole drillings were applicable tools for the determination of the granite rock underneath the ground via subsurface profiles and such as depth of overburden soil and engineering properties of soil

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Deep-level defects in n-type GaAs1-x Bi x having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been studied by contactless electroreflectance and photoluminescence. We find that incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap concentration in dilute GaAsBi layers by over two orders of magnitude compared to GaAs grown under the same conditions. In order to distinguish between Bi- and host-related traps and to identify their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies in samples with different Bi contents. This approach was recently successfully applied for the identification of electron traps in n-type GaAs1-x N x and assumes that the activation energy of electron traps decreases with the Bi (or N)-related downward shift of the conduction band. On the basis of this diagram and under the support of recent theoretical calculations, at least two Bi-related traps were revealed and associated with Bi pair defects, i.e. (VGa+BiGa)(-/2-) and (AsGa+BiGa)(0/1-). In the present work it is shown that these defects also influence the photoluminescence properties of GaAsBi alloys

Granite exploration by using electrical resistivity imaging (ERI): a case study in Johor

Electrical Resistivity Imaging (ERI) is a tool used in near surface geophysical surveys by flowing an electric current through electrodes that were injected into the ground. The usage of electrical resistivity imaging (ERI) method dominated by geophysicist has increased tremendously in geotechnical engineering application owing to the efficiency and effectiveness of the method in term of time, cost and also data coverage. The survey performed with respect to the particular reference to ERI in determining the granite rock underneath the ground. There were seven (7) lines of ERI performed at the study area by using ABEM Terrameter LS 2 set of equipment based on Schlumberger protocol. Six (6) boreholes were also drilled to obtain engineering properties of rock at the study area. In order to develop the relationship between resistivity and engineering properties, a comparison between borehole field test result and the resistivity value were made. Results from the ERI indicated the presence of zones with high resistivity values identified as overburden soil, fractured granite and solid granite. The findings of this study also showed that the electrical resistivity imaging coupled with borehole drillings were applicable tools for the determination of the granite rock underneath the ground via subsurface profiles and such as depth of overburden soil and engineering properties of soil. In conclusion, ERI is a method that does not disturb the structure or the function of the soil which successfully became the best method in exploring the granite rock

Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi

GaAsBi alloys have been extensively studied in recent years, and the highest Bi concentration yet reached has been 22 %. Many photoelectric devices using this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this chapter, we review the molecular beam epitaxy of GaAsBi and analyze the growth mechanism. Besides, we present the synthesis of AlAsBi by molecular beam epitaxy. The growth temperature, As/Ga flux ratio, Bi flux and the growth rate all have great influence on the Bi incorporation. Bismuth atoms play a surfactant role under As-rich conditions and an anti-surfactant role under Ga-rich conditions. Droplets tend to be formed on the surface of GaAsBi alloys due to the atomic size mismatch between Bi atoms and As atoms. The high-angle annular dark-field mode of scanning transmission electron microscopy images confirm Bi atoms cluster exsiting in GaAsBi films. Furthermore, we show the optical properties of GaAsBi and discuss the localized states induced by Bi. The photoluminescence wavelength of GaAsBi redshifts with increasing Bi concentration. The bandgap of GaAsBi is insensitive to temperature, which is important for developing un-cooled lasers. We discuss the influence of Bi incorporation on the electric and transport properties of GaAsBi. The types of dominant point defects induced by Bi incorporation are analyzed. The measurement results of the electron effective mass demonstrate that Bi incorporation not only changes the valence band but also has non-negligible influence on the conduction band in GaAsBi. For AlAsBi, we review the theoretical simulations and present the molecular beam epitaxy growth without substrate rotaion to investigate the influence of\ua0As/Al flux raio and the Bi flux on\ua0Bi incorporation

Phosphorus and Nitrogen Containing Dilute Bismides

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys