The Essential Role of Cu Vapor for the Self-Limit Graphene via the Cu Catalytic CVD Method

Because of the inconsistent observations, the Cu catalytic decomposition of methane for graphene synthesis is reexamined, i.e., via the surface absorption, decomposition to atomic carbon, and segregation. Here, we experimentally show the quantity of ambient Cu vapor is the key factor in graphene synthesis, which influences the dropwise condensations for airborne Cu clusters during growth. The massive carburization in Cu clusters and the calculation of carbon solubility in nanosized clusters are performed, experimented, and further examined from the growth of diamond-like-carbon films and ball-like diamonds via Cu vapor assisted growth on SiO₂. The affinitive interactions between Cu vapor, ambient gases, and solid surface are embodied. By combining the molecular dynamics for the redeposited Cu clusters to surface, the vehicle theory of Cu clusters, which transports the atomic carbon to the surface and completes the graphene growth, is thus proposed as the essential puzzle we considered

Low Temperature Growth of Graphene on Glass by Carbon-Enclosed Chemical Vapor Deposition Process and Its Application as Transparent Electrode

A novel carbon-enclosed chemical vapor deposition (CE-CVD) to grow high quality monolayer graphene on Cu substrate at a low temperature of 500 °C was demonstrated. The quality of the grown graphene was investigated by Raman spectra, and the detailed growth mechanism of high quality graphene by the CE-CVD process was investigated in detail. In addition to growth of high quality monolayer graphene, a transparent hybrid few-layer graphene/CuNi mesh electrode directly synthesized by the CE-CVD process on a conventional glass substrate at the temperature of 500 °C was demonstrated, showing excellent electrical properties (∼5 Ω/□ @ 93.5% transparency) and ready to be used for optical applications without further transfer process. The few-layer graphene/CuNi mesh electrode shows no electrical degradation even after 2 h annealing in pure oxygen at an elevated temperature of ∼300 °C. Furthermore, the few-layer graphene/CuNi mesh electrode delivers an excellent corrosion resistance in highly corrosive solutions such as electroplating process and achieves a good nucleation rate for the deposited film. Findings suggest that the low temperature few-layer graphene/CuNi mesh electrode synthesized by the CE-CVD process is an excellent candidate to replace indium tin oxide (ITO) as transparent conductive material (TCM) in the next generation

Large Scale and Orientation-Controllable Nanotip Structures on CuInS₂, Cu(In,Ga)S₂, CuInSe₂, and Cu(In,Ga)Se₂ by Low Energy Ion Beam Bombardment Process: Growth and Characterization

One-step facile methodology to create nanotip arrays on chalcopyrite materials (such as CuInS₂, Cu­(In,Ga)­S₂, CuInSe₂, and Cu­(In,Ga)­Se₂) via a low energy ion beam bombardment process has been demonstrated. The mechanism of formation for nanotip arrays has been proposed by sputtering yields of metals and reduction of metals induced by the ion beam bombardment process. The optical reflectance of these chalcopyrite nanotip arrays has been characterized by UV–vis spectrophotometer and the efficient light-trapping effect has been observed. Large scale (∼4′′) and high density (10¹⁰ tips/cm²) of chalcopyrite nanotip arrays have been obtained by using low ion energy (< 1 kV), short processing duration (< 30 min), and template-free. Besides, orientation and length of these chalcopyrite nanotip arrays are controllable. Our results can be the guide for other nanostructured materials fabrication by ion sputtering and are available for industrial production as well

Single CuO_<i>x</i> Nanowire Memristor: Forming-Free Resistive Switching Behavior

CuO_<i>x</i> nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuO_<i>x</i> nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy

Large-Scale Micro- and Nanopatterns of Cu(In,Ga)Se₂ Thin Film Solar Cells by Mold-Assisted Chemical-Etching Process

A reactive mold-assisted chemical etching (MACE) process through an easy-to-make agarose stamp soaked in bromine methanol etchant to rapidly imprint larger area micro- and nanoarrays on CIGS substrates was demonstrated. Interestingly, by using the agarose stamp during the MACE process with and without additive containing oil and triton, CIGS microdome and microhole arrays can be formed on the CIGS substrate. Detailed formation mechanisms of microstructures and the chemical composition variation after the etching process were investigated. In addition, various microand nanostructures were also demonstrated by this universal approach. The microstructure arrays integrated into standard CIGS solar cells with thinner thickness can still achieve an efficiency of 11.22%, yielding an enhanced efficiency of ∼18% compared with that of their planar counterpart due to an excellent absorption behavior confirmed by the simulation results, which opens up a promising way for the realization of high-efficiency micro- or nanostructured thin-film solar cells. Finally, the complete dissolution of agarose stamp into hot water demonstrates an environmentally friendly method by the mold-assisted chemical etching process through an easy-to-make agarose stamp

Enhanced Conversion Efficiency of Cu(In,Ga)Se₂ Solar Cells via Electrochemical Passivation Treatment

Defect control in Cu­(In,Ga)­Se₂ (CIGS) materials, no matter what the defect type or density, is a significant issue, correlating directly to PV performance. These defects act as recombination centers and can be briefly categorized into interface recombination and Shockley–Read–Hall (SRH) recombination, both of which can lead to reduced PV performance. Here, we introduce an electrochemical passivation treatment for CIGS films that can lower the oxygen concentration at the CIGS surface as observed by X-ray photoelectron spectrometer analysis. Temperature-dependent <i>J–V</i> characteristics of CIGS solar cells reveal that interface recombination is suppressed and an improved rollover condition can be achieved following our electrochemical treatment. As a result, the surface defects are passivated, and the power conversion efficiency performance of the solar cell devices can be enhanced from 4.73 to 7.75%

Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se₂ Nanotip Array Solar Cells

We present systematic works in characterization of CIGS nanotip arrays (CIGS NTRs). CIGS NTRs are obtained by a one-step ion-milling process by a direct-sputtering process of CIGS thin films (CIGS TF) without a postselenization process. At the surface of CIGS NTRs, a region extending to 100 nm in depth with a lower copper concentration compared to that of CIGS TF has been discovered. After KCN washing, removal of secondary phases can be achieved and a layer with abundant copper vacancy (V_Cu) was left. Such compositional changes can be a benefit for a CIGS solar cell by promoting formation of Cd-occupied Cu sites (Cd_Cu) at the CdS/CIGS interface and creates a type-inversion layer to enhance interface passivation and carrier extraction. The raised V_Cu concentration and enhanced Cd diffusion in CIGS NTRs have been verified by energy dispersive spectrometry. Strengthened adhesion of Al:ZnO (AZO) thin film on CIGS NTRs capped with CdS has also been observed in SEM images and can explain the suppressed series resistance of the device with CIGS NTRs. Those improvements in electrical characteristics are the main factors for efficiency enhancement rather than antireflection

Surface Plasmon-Driven Water Reduction: Gold Nanoparticle Size Matters

Water reduction under two different visible-light ranges (λ > 400 nm and λ > 435 nm) was investigated in gold-loaded titanium dioxide (Au-TiO₂) heterostructures with different sizes of Au nanoparticles (NPs). Our study clearly demonstrates the essential role played by Au NP size in plasmon-driven H₂O reduction and reveals two distinct mechanisms to clarify visible-light photocatalytic activity under different excitation conditions. The size of the Au NP governs the efficiency of plasmon-mediated electron transfer and plays a critical role in determining the reduction potentials of the electrons transferred to the TiO₂ conduction band. Our discovery provides a facile method of manipulating photocatalytic activity simply by varying the Au NP size and is expected to greatly facilitate the design of suitable plasmonic photocatalysts for solar-to-fuel energy conversion