Low Temperature Growth of Graphene on Glass by Carbon-Enclosed
Chemical Vapor Deposition Process and Its Application as Transparent
Electrode
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Abstract
A novel carbon-enclosed chemical
vapor deposition (CE-CVD) to grow
high quality monolayer graphene on Cu substrate at a low temperature
of 500 °C was demonstrated. The quality of the grown graphene
was investigated by Raman spectra, and the detailed growth mechanism
of high quality graphene by the CE-CVD process was investigated in
detail. In addition to growth of high quality monolayer graphene,
a transparent hybrid few-layer graphene/CuNi mesh electrode directly
synthesized by the CE-CVD process on a conventional glass substrate
at the temperature of 500 °C was demonstrated, showing excellent
electrical properties (∼5 Ω/□ @ 93.5% transparency)
and ready to be used for optical applications without further transfer
process. The few-layer graphene/CuNi mesh electrode shows no electrical
degradation even after 2 h annealing in pure oxygen at an elevated
temperature of ∼300 °C. Furthermore, the few-layer graphene/CuNi
mesh electrode delivers an excellent corrosion resistance in highly
corrosive solutions such as electroplating process and achieves a
good nucleation rate for the deposited film. Findings suggest that
the low temperature few-layer graphene/CuNi mesh electrode synthesized
by the CE-CVD process is an excellent candidate to replace indium
tin oxide (ITO) as transparent conductive material (TCM) in the next
generation