Single
CuO<sub><i>x</i></sub> Nanowire Memristor: Forming-Free
Resistive Switching Behavior
- Publication date
- Publisher
Abstract
CuO<sub><i>x</i></sub> nanowires
were synthesized by a low-cost and large-scale electrochemical process
with AAO membranes at room temperature and its resistive switching
has been demonstrated. The switching characteristic exhibits forming-free
and low electric-field switching operation due to coexistence of significant
amount of defects and Cu nanocrystals in the partially oxidized nanowires.
The detailed resistive switching characteristics of CuO<sub><i>x</i></sub> nanowire systems have been investigated and possible
switching mechanisms are systematically proposed based on the microstructural
and chemical analysis via transmission electron microscopy