Now That I Ate the Sushi, Do We Have a Deal? —The Lawyer as Negotiator in Japanese-U.S. Business Transactions

This article focuses on the role a lawyer may have in a transaction involving a Japanese client or party. It will encourage the attorney at early stages to look beyond the legal tasks to the underlying reasons for the transaction. In other words, it encourages the attorney to ask questions and obtain information that ordinarily may not be considered critical to the purely legal aspects of the transaction. The nihonjin generally will place greater emphasis on the development of the relationship. Thus, laying the groundwork and devoting sufficient attention to the typical or expected stages of a business negotiation will be important features of the lawyer-negotiator\u27s task

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation

The Atomic-Scale Structure of Amorphous Hydrogenated Carbon

The structure of a common batch of amorphous hydrogenated carbon samples (a-C:H) has been studied in detail using time of flight neutron diffraction, inelastic neutron scattering, NMR and molecular dynamics (MD) simulation. Supplementary work has included differential scanning calorimetry (DSC), infrared (1R) spectroscopy and combustion analysis. A summary of the results is presented as evidence for a new structural model for a-C:H

Universal optical transmission features in periodic and quasiperiodic hole arrays

We investigate the influence of array order in the optical transmission properties of subwavelength hole arrays, by comparing the experimental spectral transmittance of periodic and quasiperiodic hole arrays as a function of frequency. We find that periodicity and long-range order are not necessary requirements for obtaining enhanced and suppressed optical transmission, provided short-range order is maintained. Transmission maxima and minima are shown to result, respectively, from constructive and destructive interference at each hole, between the light incident upon and exiting from a given hole, and surface plasmon polaritons (SPPs) arriving from individual neighboring holes. These SPPs are launched along both illuminated and exit surfaces, by diffraction of the incident and emerging light at the neighboring individual subwavelength holes. By characterizing the optical transmission of a pair of subwavelength holes as a function of hole-hole distance, we demonstrate that a subwavelength hole can launch SPPs with an efficiency up to 35%, and with an experimentally determined launch phase φ = π/2, for both input-side and exit-side SPPs. This characteristic phase has a crucial influence on the shape of the transmission spectra, determining transmission minima in periodic arrays at those frequencies where grating coupling arguments would instead predict maxima

Silicon Nanocrystal Field-Effect Light-Emitting Devices

We describe the operation of a light-emitting device in which silicon nanocrystals are electrically pumped via the field-effect electroluminescence (EL) mechanism. In contrast to the simultaneous bipolar carrier injection used in conventional p-n junction light-emitting diodes, this device employs sequential unipolar programming of both electrons and holes across a tunneling barrier from the same semiconductor channel. Light emission is strongly correlated with the injection of second carriers into nanocrystals that have been previously programmed with charges of the opposite sign. The properties of this device are well described by the model of a charge injection through Coulomb field modified tunneling processes. We additionally consider limiting performance bounds for potential future devices fabricated from nanocrystals with different radiative emission rates

Trade Adjustment Assistance by Industry: Florida

International Relations/Trade,

Teaching the Grid: Learning Distributed Computing with the M-grid Framework

A classic challenge within Computer Science is to distribute data and processes so as to take advantage of multiple computers tackling a single problem in a simultaneous and coordinated way. This situation arises in a number of different scenarios, including Grid computing which is a secure, service-based architecture for tackling massively parallel problems and creating virtual organizations. Although the Grid seems destined to be an important part of the future computing landscape, it is very difficult to learn how to use as real Grid software requires extensive setting up and complex security processes. M-grid mimics the core features of the Grid, in a much simpler way, enabling the rapid prototyping of distributed applications. We describe m-grid and explore how it may be used to teach foundation Grid computing skills at the Higher Education level and report some of our experiences of deploying it as an exercise within a programming course

Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission

We utilize bias-dependent internal photoemission spectroscopy to determine the metal/dielectric/silicon energy barrier profiles for Au/HfO2/Si and Au/Al2O3/Si structures. The results indicate that the applied voltage plays a large role in determining the effective barrier height and we attribute much of the variation in this case to image potential barrier lowering in measurements of single layers. By measuring current at both positive and negative voltages, we are able to measure the band offsets from Si and also to determine the flatband voltage and the barrier asymmetry at 0 V. Our SiO2 calibration sample yielded a conduction band offset value of 3.03+/-0.1 eV. Measurements on HfO2 give a conduction band offset value of 2.7+/-0.2 eV (at 1.0 V) and Al2O3 gives an offset of 3.3+/-0.1 (at 1.0 V). We believe that interfacial SiO2 layers may dominate the electron transport from silicon for these films. The Au/HfO2 barrier height was found to be 3.6+/-0.1 eV while the Au/Al2O3 barrier is 3.5+/-0.1 eV