Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands

A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.Comment: 14 pages, 5 figure

Properties and characterization of ALD grown dielectric oxides for MIS structures

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference

The Cartan – Monge geometric approach to the characteristic method for nonlinear partial differential equations of the first and higher orders

We develop the Cartan – Monge geometric approach to the characteristic method for nonlinear part ial differential equations of the first and higher orders. The Hamiltonian structure of characteristic vector fields related with nonlinear partial differential equations of the first order is analyzed, the tensor fields of special structure are constructed for defining characteristic vector fields naturally related with nonlinear partial differential equations of higher orders

ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T s = 160 • C) with a new zinc precursor (dimethylzinc -DMZn) and with cobalt (II) acetyloacetonate (Co(acac)2) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films

On the limit properties of the solution of the Dirichlet problem for the equation (Δ−c2)u(x,y)=0(\Delta-c^2)u(x, y) = 0 in the half-plane

The article contains no abstrac

Approximation by bivariate Mazhar-Totik operators

The aim of this paper is to study a bivariate version of the operator investigated in [2], [4]. We shall present Voronovskaya type theorem and theorems giving a rate of convergence of this operator. Some applications for the limit problem are indicated