Narrow channel Si-MOSFETs for electron transport studies

We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices

The handbook for standardised field and laboratory measurements in terrestrial climate-change experiments and observational studies

Climate change is a worldwide threat to biodiversity and ecosystem structure, functioning, and services. To understand the underlying drivers and mechanisms, and to predict the consequences for nature and people, we urgently need better understanding of the direction and magnitude of climate‐change impacts across the soil–plant–atmosphere continuum. An increasing number of climate‐change studies is creating new opportunities for meaningful and high‐quality generalisations and improved process understanding. However, significant challenges exist related to data availability and/or compatibility across studies, compromising opportunities for data re‐use, synthesis, and upscaling. Many of these challenges relate to a lack of an established “best practice” for measuring key impacts and responses. This restrains our current understanding of complex processes and mechanisms in terrestrial ecosystems related to climate change

Temperature dependence of universal conductance fluctuations in narrow mesoscopic Si inversion layers

The temperature dependence of magnetoconductance fluctuations in narrow mesoscopic silicon inversion layers (length 4.3 m, width 0.14 and 0.43 m) has been studied. The magnitude and magnetic correlation length of the fluctuations was measured in the temperature range T=0.24.2 K and for magnetic fields up to 3 T. Weak-localization experiments were performed for an independent determination of the inelastic diffusion length Lin. When Lin exceeds the channel width W [quasi-one-dimensional (quasi-1D)] the experimental temperature dependence of the fluctuation amplitude and magnetic correlation length is very well described by the theory for universal conductance fluctuations of Lee and Stone. In case Lin<W (quasi-2D) a good agreement with this theory is found for the temperature dependence of the fluctuation amplitude