Research Methodologies and Business Discourse Teaching

This chapter will:; ; ; Define English for specific purposes and indicate the specific ways in which it has been influential on business discourse teaching;; ; ; Discuss the most relevant approaches to genre analysis that have been used in business discourse teaching;; ; ; Explore the most relevant approaches to critical discourse analysis and organizational rhetoric for business discourse teaching;; ; ; Identify the most relevant aspects of multimodal discourse analysis for business discourse teaching;; ; ; Provide a case study that illustrates the use of one approach to business discourse teaching, showing how practitioners can incorporate it into their classroom- or consultancy-based ideas

Europees recht

The progression of EU law: Accommodating change and upholding value

“Trust Me, I’m a Sub-editor”

In this paper, I focus on one particular player in the newspaper production process, i.e. the subeditor. I analysed the sub-editing process through participant observation in newsrooms in the United Kingdom, Belgium and the Netherlands. Looking at both the sub-editors at work (think-aloud protocol) as well as the articles in various stages of production, and informed by (retrospective) interviews, I have compiled a list of six of the sub-editor's "production values". These values guide sub-editors whenever they intervene, and help them to transform a news story into an appealing, correct and credible newspaper article. I took the lead from Ostgaard's "factors influencing the flow of news", but also from Galtung and Ruge's "news values" which help reporters to determine which "events" are transitioned into "news". In doing so, I go beyond the limitations of previous research, in which the types of interventions carried out in the sub-editing stage of newswriting were categorised. By identifying the guidelines driving the alterations made by the sub-editor, I aim to move one step closer towards uncovering the intricacies of the sub-editing process. Moreover, I demonstrate how "the rewrite men" add journalistic value to their newspapers, as perhaps their brand's strongest ambassadors

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

International audienceThis is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

International audienceThis is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

In this study, we investigate the difference between ID(VG) and C(VG) pBTI shifts on GaN-on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (VGStress) and temperatures (T). A new experimental setup using ultra-fast and simultaneous ID(VG) and C(VG) measurements enables to monitor the threshold voltage VTHdrift through two metrics, \u394 VTHI and \u394VTHC. Experimental pBTI results depict a difference between \u394 VTHI and \u394 VTHC, such as \u394 VTHI < \u394 VTHC. TCAD simulations support that ID(VG) shift (\u394 VTHI) is related to charge trapping in Al2O3gate oxide defects at the gate corners regions while C(VG) shift (\u394 VTHC) is mainly ascribed to the gate bottom, due to the presence of a back-barrier layer in the epitaxy. These previous results enable to deduce that the Al2O3defects density is more important at the gate corners than at the gate bottom

Leveraging student-led interviews in the multilingual workplace

Descriptive and Comparative Linguistic