Manifestations of fine features of the density of states in the transport properties of KOs2O6

We performed high-pressure transport measurements on high-quality single crystals of KOs2O6, a beta-pyrochlore superconductor. While the resistivity at high temperatures might approach saturation, there is no sign of saturation at low temperatures, down to the superconducting phase. The anomalous resistivity is accompanied by a nonmetallic behavior in the thermoelectric power (TEP) up to temperatures of at least 700 K, which also exhibits a broad hump with a maximum at 60 K. The pressure influences mostly the low-energy electronic excitations. A simple band model based on enhanced density of states in a narrow window around the Fermi energy (EF) explains the main features of this unconventional behavior in the transport coefficients and its evolution under pressure

Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities

The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a complex energy dependence of the scattering cross section in such systems. Here we derive the exact solution of polaronic impurities shaping the electronic transport in bulk (3D) systems. In the model with a short-ranged electron-phonon interaction, we solve for and sum over all elastic and inelastic partial cross sections, abundant in resonant features. The temperature dependence of the charge mobility shows the power-law dependence, $\mu(T)\propto T^{-\nu}$, with $\nu$ being highly sensitive to impurity parameters. The latter may explain nonuniversal power-law exponents observed experimentally, e.g. in high-quality organic molecular semiconductors.Comment: 5 pages, 6 figure

Diffusion of triplet excitons in an operational Organic Light Emitting Diode

Measurements of the diffusion length L for triplet excitons in small molecular-weight organic semiconductors are commonly carried out using a technique in which a phosphorescent-doped probe layer is set in the vicinity of a supposed exciton generation zone. However, analyses commonly used to retrieve $L$ ignore microcavity effects that may induce a strong modulation of the emitted light as the position of the exciton probe is shifted. The present paper investigates in detail how this technique may be improved to obtain more accurate results for L. The example of 4,4'-bis(carbazol-9-yl)1,1'-biphenyl (CBP) is taken, for which a triplet diffusion length of L=16 +/- 4 nm (at 3 mA/cm2) is inferred from experiments. The influence of triplet-triplet annihilation, responsible for an apparent decrease of L at high current densities, is theoretically investigated, as well as the 'invasiveness' of the thin probe layer on the exciton distribution. The interplay of microcavity effects and direct recombinations is demonstrated experimentally with the archetypal trilayer structure [N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)]-4,4'-diaminobiphenyl (NPB)/CBP/ 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (named bathocuproine, BCP). It is shown that in this device holes do cross the NPB/CBP junction, without the assistance of electrons and despite the high energetic barrier imposed by the shift between the HOMO levels. The use of the variable-thickness doped layer technique in this case is then discussed. Finally, some guidelines are given for improving the measure of the diffusion length of triplet excitons in operational OLEDs, applicable to virtually any small molecular-weight material.Comment: Accepted for publication in Physical Review

MOLED: Simulation of multilayer organic light emitting diodes

International audienc

Numerical model for organic light-emitting diodes

International audienc

Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS 2

Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies reaching thousands. Here, we show that this rule does not hold for 1T-TaS2—a compound with the richest phase diagram among TMDs. Although the onset of charge density wave order makes the in-plane conduction non-metallic, we reveal that the out-of-plane charge transport is metallic and the resistivity anisotropy is close to one. We support our findings with ab initio calculations predicting a pronounced quasi-one-dimensional character of the electronic structure. Consequently, we interpret the highly debated metal-insulator transition in 1T-TaS2 as a quasi-one-dimensional instability, contrary to the long- standing Mott localisation picture. In a broader context, these findings are relevant for the newly born field of van der Waals heterostructures, where tuning interlayer interactions (e.g., by twist, strain, intercalation, etc.) leads to new emergent phenomena