Interdisciplinary Decisions Application in Management, or How to Use the Experience of Workload Management of Technological System with Regard to Human Resources

To a modern executive officer enterprise management means challenging requirements in search of unconventional solutions in system administration organization. A whole spectrum of solutions is found when you use knowledge, traditions and managerial decisions existing in other spheres. This article contemplates concepts and philosophy that consider the problem from the other point of view and find new or specialized decisions from related areas. A comparison between workload management in technological system and human resources is used as an example. Based on this comparison implications are made about certain compatibility of these systems and possible adaptation of the existing management methods. At the end we come to the conclusion of benefit from using intersectorial and cross-cultural experience

Motivation of Research and Innovation

One of the key resources of the organization and implementation of professional activity in any field of knowledge and the field of application is the inner motivation of the parties at its constant upgrading and improvement. Development and implementation of a format for life organization and conduct of professional development is fundamentally changing the understanding and attitudes of practicing managers to the place, role, and value of interaction with scientific and educational groups. This is most evident in establishing and maintaining their participation in the joint with the faculty of the University departments of scientific research, conferences and publications on an ongoing basis. First of all, it is typical for graduates of the graduate school, Ph.D. degree and continuing professional self-improvement, as a part of doctoral studies, and through independent programs. This generates obvious advantages of joint development of the sphere of professional management and scientific-educational environment

Fermionic SK-models with Hubbard interaction: Magnetism and electronic structure

Models with range-free frustrated Ising spin- and Hubbard interaction are treated exactly by means of the discrete time slicing method. Critical and tricritical points, correlations, and the fermion propagator, are derived as a function of temperature T, chemical potential \mu, Hubbard coupling U, and spin glass energy J. The phase diagram is obtained. Replica symmetry breaking (RSB)-effects are evaluated up to four-step order (4RSB). The use of exact relations together with the 4RSB-solutions allow to model exact solutions by interpolation. For T=0, our numerical results provide strong evidence that the exact density of states in the spin glass pseudogap regime obeys \rho(E)=const |E-E_F| for energies close to the Fermi level. Rapid convergence of \rho'(E_F) under increasing order of RSB is observed. The leading term resembles the Efros-Shklovskii Coulomb pseudogap of localized disordered fermionic systems in 2D. Beyond half filling we obtain a quadratic dependence of the fermion filling factor on the chemical potential. We find a half filling transition between a phase for U>\mu, where the Fermi level lies inside the Hubbard gap, into a phase where \mu(>U) is located at the center of the upper spin glass pseudogap (SG-gap). For \mu>U the Hubbard gap combines with the lower one of two SG-gaps (phase I), while for \mu<U it joins the sole SG-gap of the half-filling regime (phase II). We predict scaling behaviour at the continuous half filling transition. Implications of the half-filling transition between the deeper insulating phase II and phase I for delocalization due to hopping processes in itinerant model extensions are discussed and metal-insulator transition scenarios described.Comment: 29 pages, 26 Figures, 4 jpeg- and 3 gif-Fig-files include

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.Comment: 4 pages, 4 figure

Phase Diagram of Diluted Magnetic Semiconductor Quantum Wells

The phase diagram of diluted magnetic semiconductor quantum wells is investigated. The interaction between the carriers in the hole gas can lead to first order ferromagnetic transitions, which remain abrupt in applied fields. These transitions can be induced by magnetic fields or, in double-layer systems by electric fields. We make a number of precise experimental predictions for observing these first order phase transitions.Comment: 4 pages, 3 figures include

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Electronic transport in semiconductors that possess high internal spontaneous and piezoelectric polarization opens up a new field of pyroelectronics and pyrosensors. The pyroelectric character of group-III-nitrides with wurtzite crystal structure yields a novel degree of freedom in designing and tailoring devices for modern micro- and nanoelectronic applications. Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of ions, gases and polar liquids. We present a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases which are formed at the AlGaN/GaN interface due to the difference in the total polarization of two adjacent III-nitride layers. We demonstrate that the two-dimensional electron gases (2DEGs) achieved without modulation doping are very suitable as channel of high electron mobility transistors optimally suited for high power and high frequency applications (PART A) as well as for various kinds of sensors which can be operated in harsh environments (PART B)