Conformal Antenna Array for Millimeter-Wave Communications: Performance Evaluation

In this paper, we study the influence of the radius of a cylindrical supporting structure on radiation properties of a conformal millimeter-wave antenna array. Bent antenna array structures on cylindrical surfaces may have important applications in future mobile devices. Small radii may be needed if the antenna is printed on the edges of mobile devices and in items which human beings are wearing, such as wrist watches, bracelets and rings. The antenna under study consists of four linear series-fed arrays of four patch elements and is operating at 58.8 GHz with linear polarization. The antenna array is fabricated on polytetrafluoroethylene substrate with thickness of 0.127 mm due to its good plasticity properties and low losses. Results for both planar and conformal antenna arrays show rather good agreement between simulation and measurements. The results show that conformal antenna structures allow achieving large angular coverage and may allow beam-steering implementations if switches are used to select between different arrays around a cylindrical supporting structure.Comment: Keywords: conformal antenna, millimeter-wave communications, patch antenna array. 11 pages, 10 figures, 1 tabl

The summer 2018 heatwave in Finland

Peer reviewe

Luminescence Spectroscopy of Semiconductor Surfaces and Interfaces

Low energy cathodoluminescence spectroscopy (CLS) employing incident electron energies in the range of a few kV or less enable measurement of electronic structure near semiconductor surfaces and interfaces. Coupled with photoluminescence spectroscopy (PL), the CLS technique has been extended to characterize electronic structure tens of nanometers below the free surface at metal-semiconductor and semiconductor-semiconductor junctions. CLS has revealed discrete, deep electronic states for clean and metallized semiconductor surfaces as a function of atomic ordering as well as vicinal surfaces as a function of misorientation. A combination of CLS and PL reveals deep level features associated with strain relaxation and dislocations at heterojunction interfaces as well as variations in epilayer growth conditions. Such observations demonstrate the existence of discrete, deep levels in the semiconductor band gap and their sensitivity to chemical and atomic structure near surfaces and interfaces. Furthermore, the energies and densities of such deep levels provide a consistent picture of Fermi level stabilization and band bending at semiconductor contacts. Finally, our results indicate that deep level CLS/PL measurements are an effective, in-situ probe of surface and interface quality

Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by noindentation

The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83:07 1:78 GPa), hardness (H = 5:19 0:25 GPa) and “true hardness” (HT = 5:73 0:04 GPa). The registered pop-in event which indicates the elastic–plastic transition in GaSb crystal points towards the corresponding yield strength ( Y = 3:8 0:1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept

Spatial distributions and seasonal cycles of aerosols in India and China seen in global climate-aerosol model

Peer reviewe

Digital Technologies for Transport and Mobility: Challenges, Trends and Perspectives

This white paper aims at presenting the ideas emerging from the different fields pertaining to transport and mobility, to describe the capacities of current state-of-the-art digital technologies and the perspectives that are expected to shape the future of transport and mobility