24 research outputs found
Single-dopant band bending fluctuations in MoSe measured with electrostatic force microscopy
In this work, we experimentally demonstrate two-state fluctuations in a
metal-insulator-semiconductor (MIS) device formed out of a metallic atomic
force microscopy tip, vacuum gap, and multilayer MoSe sample. We show that
noise in this device is intrinsically bias-dependent due to the bias-dependent
surface potential, and does not require that the frequency or magnitude of
individual dopant fluctuations are themselves bias-dependent. Finally, we
measure spatial nonhomogeneities in band bending (charge reorganization)
timescales.Comment: 6 main text pages, 8 supplemetary pages, 11 figure