Orbital photogalvanic effects in quantum-confined structures

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.Comment: 8 pages, 5 figures, two culumne

Tuning of structure inversion asymmetry by the δ\delta-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.Comment: 4 pages 2 figure

Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, we demonstrate that the pure valley-orbit currents can be converted into a measurable electric current

Complexity Measures from Interaction Structures

We evaluate new complexity measures on the symbolic dynamics of coupled tent maps and cellular automata. These measures quantify complexity in terms of $k$-th order statistical dependencies that cannot be reduced to interactions between $k-1$ units. We demonstrate that these measures are able to identify complex dynamical regimes.Comment: 11 pages, figures improved, minor changes to the tex