762 research outputs found
Hole Transport in p-Type ZnO
A two-band model involving the A- and B-valence bands was adopted to analyze
the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO.
The hole transport characteristics (mobilities, and effective Hall factor) are
calculated using the ``relaxation time approximation'' as a function of
temperature. It is shown that the lattice scattering by the acoustic
deformation potential is dominant. In the calculation of the scattering rate
for ionized impurity mechanism, the activation energy of 100 or 170 meV is used
at different compensation ratios between donor and acceptor concentrations. The
theoretical Hall mobility at acceptor concentration of
cm is about 70 cmVs with the activation energy of 100 meV
and the compensation ratio of 0.8 at 300 K. We also found that the compensation
ratios conspicuously affected the Hall mobilities.Comment: 5page, 5 figures, accepted for publication in Jpn. J. Appl. Phy
Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
Recently a metallic state was discovered at the interface between insulating
oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional
electron gas (2DEG) have attracted significant interest due to its potential
applications in nanoelectronics. Control over this carrier density and mobility
of the 2DEG is essential for applications of these novel systems, and may be
achieved by epitaxial strain. However, despite the rich nature of strain
effects on oxide materials properties, such as ferroelectricity, magnetism, and
superconductivity, the relationship between the strain and electrical
properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely
unexplored. Here, we use different lattice constant single crystal substrates
to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial
strain. We have found that tensile strained SrTiO3 destroys the conducting
2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier
concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface.
We have also found that the critical LaAlO3 overlayer thickness for 2DEG
formation increases with SrTiO3 compressive strain. Our first-principles
calculations suggest that a strain-induced electric polarization in the SrTiO3
layer is responsible for this behavior. It is directed away from the interface
and hence creates a negative polarization charge opposing that of the polar
LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer,
and reduces carrier concentration above the critical thickness, in agreement
with our experimental results. Our findings suggest that epitaxial strain can
be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface
Photoemission study of TiO2/VO2 interfaces
We have measured photoemission spectra of two kinds of TiO-capped VO
thin films, namely, that with rutile-type TiO (r-TiO/VO) and that
with amorphous TiO (a-TiO/VO) capping layers. Below the
Metal-insulator transition temperature of the VO thin films, K,
metallic states were not observed for the interfaces with TiO, in contrast
with the interfaces between the band insulator SrTiO and the Mott insulator
LaTiO in spite of the fact that both TiO and SrTiO are band
insulators with electronic configurations and both VO and LaTiO
are Mott insulators with electronic configurations. We discuss possible
origins of this difference and suggest the importance of the polarity
discontinuity of the interfaces. Stronger incoherent part was observed in
r-TiO/VO than in a-TiO/VO, suggesting Ti-V atomic diffusion due
to the higher deposition temperature for r-TiO/VO.Comment: 5 pages, 6 figure
Experience in Use of Multi-Labeled Autoradiography by Means of 18F-Fluorodeoxyglucose and 14C-Iodoantipyrine
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Two-dimensional superconductivity at a Mott-Insulator/Band-Insulator interface: LaTiO3/SrTiO3
Transition metal oxides display a great variety of quantum electronic
behaviours where correlations often play an important role. The achievement of
high quality epitaxial interfaces involving such materials gives a unique
opportunity to engineer artificial structures where new electronic orders take
place. One of the most striking result in this area is the recent observation
of a two-dimensional electron gas at the interface between a strongly
correlated Mott insulator LaTiO3 and a band insulator SrTiO3. The mechanism
responsible for such a behaviour is still under debate. In particular, the
influence of the nature of the insulator has to be clarified. Here we show that
despite the expected electronic correlations, LaTiO3/SrTiO3 heterostructures
undergo a superconducting transition at a critical temperature Tc=300 mK. We
have found that the superconducting electron gas is confined over a typical
thickness of 12 nm. We discuss the electronic properties of this system and
review the possible scenarios
The Effect of Pentoxifylline and Propentofylline(HWA-285) on Post-Ischemic Rat Brain
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