High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Contains an introduction and reports on experiments and device results.Joint Services Electronics Program Contract DAAL03-89-C-0001Charles S. Draper Laboratory Contract DL-H-40418

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Contains an introduction, reports on two research projects and a list of publications and conference papers.Charles S. Draper Laboratory Contract DL-H-418488Joint Services Electronics Program Contract DAAL03-89-C-000

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantJoint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909Purdue University Subcontract No. 530-0716-07U.S. Navy - Office of Naval Research Contract N00014-88-K-056

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Contains an introduction, reports on two research projects and a list of publications and conference papers.Charles S. Draper Laboratories Contract DL-H-441694Joint Services Electronics Program Contract DAAL03-92-C-0001Texas Instruments Agreement dated 08/14/9

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects and a list of publications.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantDefense Advanced Research Projects Agency Subcontract 216-25013Defense Advanced Research Projects Agency Subcontract 542383Joint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909U.S. Navy - Office of Naval Research Contract N00014-88-K-0564Charles Stark Draper Laboratories Contract DL-H-418484Defense Advanced Research Projects Agency Subcontract 530-0716-0

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Contains an introduction, reports on two research projects and a list of publications.Charles S. Draper Laboratories Contract DL-H-441694Fujitsu LaboratoriesJoint Services Electronics Program Contract DAAL03-92-C-0001Texas Instrument

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Contains an introduction and a report on one research project.Charles S. Draper Laboratories, Inc. Contract DL-H-418488Fujitsu LaboratoriesJoint Services Electronics Program Contract DAAL03-89-C-0001Joint Services Electronics Program Contract DAAL03-92-C-0001Texas Instrument

Single Electron Transistors

Contains description of one research project.Joint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 88-1325

Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Contains a description on one research project.Joint Services Electronics Program DAAL03-89-C-000

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects and a list of publications.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantCharles S. Draper Laboratories Contract DL-H-418484Defense Advanced Research Projects Agency Subcontract 216-25013Defense Advanced Research Projects Agency Subcontract 542383Joint Services Electronics Program Contract DAAL03-89-C-0001Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909Defense Advanced Research Projects Agency Subcontract 5300716-07U.S. Navy - Office of Naval Research Contract N00014-88-K-0564Defense Advanced Research Projects Agency Subcontract 530-0716-07National Science Foundation Subcontract DMR 90-0789