Spin Coulomb drag in the two-dimensional electron liquid

We calculate the spin-drag transresistivity $\rho_{\uparrow \downarrow}(T)$ in a two-dimensional electron gas at temperature $T$ in the random phase approximation. In the low-temperature regime we show that, at variance with the three-dimensional low-temperature result [$\rho_{\uparrow\downarrow}(T) \sim T^2$], the spin transresistivity of a two-dimensional {\it spin unpolarized} electron gas has the form $\rho_{\uparrow\downarrow}(T) \sim T^2 \ln T$. In the spin-polarized case the familiar form $\rho_{\uparrow\downarrow}(T) =A T^2$ is recovered, but the constant of proportionality $A$ diverges logarithmically as the spin-polarization tends to zero. In the high-temperature regime we obtain $\rho_{\uparrow \downarrow}(T) = -(\hbar / e^2) (\pi^2 Ry^* /k_B T)$ (where $Ry^*$ is the effective Rydberg energy) {\it independent} of the density. Again, this differs from the three-dimensional result, which has a logarithmic dependence on the density. Two important differences between the spin-drag transresistivity and the ordinary Coulomb drag transresistivity are pointed out: (i) The $\ln T$ singularity at low temperature is smaller, in the Coulomb drag case, by a factor $e^{-4 k_Fd}$ where $k_F$ is the Fermi wave vector and $d$ is the separation between the layers. (ii) The collective mode contribution to the spin-drag transresistivity is negligible at all temperatures. Moreover the spin drag effect is, for comparable parameters, larger than the ordinary Coulomb drag effect.Comment: 6 figures; various changes; version accepted for publicatio

Compounds affecting cholesterol absorption

A class of novel compounds is described for use in affecting lymphatic absorption of cholesterol. Compounds of particular interest are defined by Formula I: ##STR1## or a pharmaceutically acceptable salt thereof

Load distribution in weighted complex networks

We study the load distribution in weighted networks by measuring the effective number of optimal paths passing through a given vertex. The optimal path, along which the total cost is minimum, crucially depend on the cost distribution function $p_c(c)$. In the strong disorder limit, where $p_c(c)\sim c^{-1}$, the load distribution follows a power law both in the Erd\H{o}s-R\'enyi (ER) random graphs and in the scale-free (SF) networks, and its characteristics are determined by the structure of the minimum spanning tree. The distribution of loads at vertices with a given vertex degree also follows the SF nature similar to the whole load distribution, implying that the global transport property is not correlated to the local structural information. Finally, we measure the effect of disorder by the correlation coefficient between vertex degree and load, finding that it is larger for ER networks than for SF networks.Comment: 4 pages, 4 figures, final version published in PR

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $\epsilon$($\omega$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $\epsilon^{b}$($\omega$), since these are important scientifically as well as technologically: the $\epsilon_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $\epsilon_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $\epsilon_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $\epsilon_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $\epsilon_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table

Dynamic behavior of driven interfaces in models with two absorbing states

We study the dynamics of an interface (active domain) between different absorbing regions in models with two absorbing states in one dimension; probabilistic cellular automata models and interacting monomer-dimer models. These models exhibit a continuous transition from an active phase into an absorbing phase, which belongs to the directed Ising (DI) universality class. In the active phase, the interface spreads ballistically into the absorbing regions and the interface width diverges linearly in time. Approaching the critical point, the spreading velocity of the interface vanishes algebraically with a DI critical exponent. Introducing a symmetry-breaking field $h$ that prefers one absorbing state over the other drives the interface to move asymmetrically toward the unpreferred absorbing region. In Monte Carlo simulations, we find that the spreading velocity of this driven interface shows a discontinuous jump at criticality. We explain that this unusual behavior is due to a finite relaxation time in the absorbing phase. The crossover behavior from the symmetric case (DI class) to the asymmetric case (directed percolation class) is also studied. We find the scaling dimension of the symmetry-breaking field $y_h = 1.21(5)$.Comment: 5 pages, 5 figures, Revte

Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

We present first-principles calculations to predict several three dimensional (3D) topological insulators in quaternary chalcogenide compounds which are made of I$_2$-II-IV-VI$_4$ compositions and in ternary compositions of I$_3$-V-VI$_4$ famatinite compounds. Among the large members of these two families, we give examples of naturally occurring compounds which are mainly Cu-based chalcogenides. We show that these materials are candidates of 3D topological insulators or can be tuned to obtain topological phase transition by manipulating the atomic number of the other cation and anion elements. A band inversion can occur at a single point $\Gamma$ with considerably large inversion strength, in addition to the opening of a bulk band gap throughout the Brillouin zone. We also demonstrate that both of these families are related to each other by cross-substitutions of cations in the underlying tetragonal structure and that one can suitably tune their topological properties in a desired manner.Comment: 7 pages, 4 figure

Exact scaling properties of a hierarchical network model

We report on exact results for the degree $K$, the diameter $D$, the clustering coefficient $C$, and the betweenness centrality $B$ of a hierarchical network model with a replication factor $M$. Such quantities are calculated exactly with the help of recursion relations. Using the results, we show that (i) the degree distribution follows a power law $P_K \sim K^{-\gamma}$ with $\gamma = 1+\ln M /\ln (M-1)$, (ii) the diameter grows logarithmically as $D \sim \ln N$ with the number of nodes $N$, (iii) the clustering coefficient of each node is inversely proportional to its degree, $C \propto 1/K$, and the average clustering coefficient is nonzero in the infinite $N$ limit, and (iv) the betweenness centrality distribution follows a power law $P_B \sim B^{-2}$. We discuss a classification scheme of scale-free networks into the universality class with the clustering property and the betweenness centrality distribution.Comment: 4 page