Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Morphoquantitative aspects of nitrergic myoenteric neurons from the stomach of diabetic rats supplemented with acetyl-L-carnitine

The NADPH-diaphorase (NADPH-d) positive myoenteric neurons from the body of the stomach of rats with streptozotocin-induced diabetes with or without supplementation with acetyl-L-carnitine (ALC) were evaluated. At the age of 105 days the animals were divided into four groups: normoglycaemic (C), normoglycaemic supplemented with ALC (CC), diabetic (D) and diabetic supplemented with ALC (DC). The supplementation with ALC (200 mg/kg body weight/day) to groups CC and DC was made during 105 days. After this period the animals were killed and the stomach removed and subjected to the histochemical technique of NADPH-d for the staining of the neurons of the myoenteric plexus. The area of 500 neurons of each group was investigated, as well as the neuronal density in an area of 23.84 mm(2) in each stomach. ALC promoted reduction (P < 0.05) of fasting glycaemia, water ingestion and areas of the profiles of the cell bodies of the NADPH-d neurons in the diabetic animals. The density of these neurons was not statistically different in the groups studied. It is suggested, therefore, a moderate neuroprotective effect of ALC, because the diminishment of the areas of the neuronal profiles in the supplemented diabetic animals, although being statistically significant relative to the non-supplemented diabetics, was not sufficient to equal the values from the non-diabetic controls

Morphoquantitative aspects of NADH-diaphorase myenteric neurons in the ileum of diabetic rats treated with acetyl-L-carnitine

In this work, we investigated the effect of the acetyl-L-carnitine (ALC) supplementation (200 mg/kg/day) on the myenteric neurons of the ileum of rats made diabetic by streptozotocin (35 mg/kg, i.v.). Four groups were used: diabetic (D), diabetic supplemented with ALC (DC), control (C) and control supplemented with ALC (CC). After 15 weeks of diabetes induction the animals were killed and the ileum was collected and subjected to whole-mount preparation to evidence the myenteric neurons through the histochemical technique of the NADH-diaphorase. The density of neurons seen in 12.72 min(2) of ileum showed no difference among the groups, although in group D it was 22% smaller than in group C, while group DC was 9% smaller to group CC. The profiles of the cell bodies (PC) of 1000 neurons per group were analysed. The neurons PC in group D decreased (P < 0.0001) when compared with other groups and increased (P < 0.0001) when compared with group DC. The incidence of neurons with a PC inferior to 200 mu m(2) was larger in group D. The frequency of neurons with a PC higher than 200 mu m(2) in group DC was close to those seen in groups C and CC. We concluded that ALC eases the loss of neurons and makes the incidence of myenteric neurons with a PC higher than 200 mu m(2) similar to the control rats

Pseudospin-driven spin relaxation mechanism in graphene

The prospect of transporting spin information over long distances in graphene, possible because of its small intrinsic spin-orbit coupling (SOC) and vanishing hyperfine interaction, has stimulated intense research exploring spintronics applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for non-magnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, unique to graphene. The mixing between spin and pseudospin-related Berrya's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.The research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement number 604391 Graphene Flagship. This work was also funded by Spanish Ministry of Economy and Competitiveness under contracts MAT2012-33911 and MAT2010-18065. S.O.V. acknowledges ERC Grant agreement 308023 SPINBOUND.Peer Reviewe

Determination of the spin-lifetime anisotropy in graphene using oblique spin precession

We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields